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gas under 1000 K by synchrotron radiation photoemission spectroscopyYoshigoe, Akitaka; Moritani, Kosuke; Teraoka, Yuden
Surface Science, 566-568(Part.2), p.1124 - 1129, 2004/09
Times Cited Count：5 Percentile：28.47(Chemistry, Physical)The Si(001) oxidaion is an important reaction for not only semiconductor technology but also surface science. It is known that the growth mode forming oxide-layers is divided into two regions depending on surface temperature conditions. One is passive oxidation and the other is two dimensional island growth including SiO desorption. Since the oxygen uptake measurements have been measured in many reported studies, Si oxidatuion states related to the growth of oxide-layers have not been clarified yet. In order to measure the time evolution of Si oxidation states depending on the surface temperature, we have performed the real-time photoemission measurements using synchrotron radiation at SUREAC2000 in SPring-8 . We found that the Si
states was formed at the early oxidation stage in the two dimiensional island regions.
/Si(001) system observed by SiO mass spectrometry and synchrotron radiation photoemission spectroscopyTeraoka, Yuden; Moritani, Kosuke; Yoshigoe, Akitaka
Applied Surface Science, 216(1-4), p.8 - 14, 2003/06
Times Cited Count：6 Percentile：34.35(Chemistry, Physical)The experiments concerning the oxidation of Si(001) were performed at the surface reaction analysis apparatus, installed at the beamline BL23SU in the SPring-8. The SiO desorb remarkably at surface temperature of 1000 K. The desorption yield increased with increasing the incident energy of O. On the other hand, the desorption yield increased with decreasing the incident energy in the temperature region lower than 1000 K. Oxygen uptake curves observed by O-1s photoemission measurements corresponded to the SiO desorption features. These facts reveal that the passive oxidation coexists with the SiO desorption in the temperature region from 900 K to 1000 K.
supersonic molecular beamsYoshigoe, Akitaka; Sano, Mutsumi; Teraoka, Yuden
Japanese Journal of Applied Physics, Part 1, 39(12B), p.7026 - 7030, 2000/12
Times Cited Count：9 Percentile：40.50(Physics, Applied)no abstracts in English
