JOPSS - Search Results

Journal Articles

Dynamic nuclear self-polarization of III-V semiconductors

Koizumi, Mitsuo; Goto, Jun*; Matsuki, Seishi*

Journal of Semiconductors, 39(8), p.082001_1 - 082001_5, 2018/08

https://doi.org/10.1088/1674-4926/39/8/082001

Dynamic nuclear self-polarization (DYNASP) is a phenomenon observed in III-V semiconductors. When electrons of the valence band of a semiconductor are optically excited to the conduction band, a relaxation process of the conduction electrons induces a large nuclear polarization to suddenly occur below a critical temperature. Extending the original theoretical work of Dyakonov et al., we examined the effect of spin distribution of valence electrons excited by the circularly polarized light and the effect of external magnetic field on the phenomenon of the nuclear self-polarization. We found that the nuclear polarization is achieved even above the critical temperatures by the effect of electron polarization and of the external magnetic field. To investigate the phenomenon experimentally, we constructed an apparatus for low-temperature experiments.

Journal Articles

Diluted magnetic semiconductors with narrow band gaps

Gu, B.; Maekawa, Sadamichi

Physical Review B, 94(15), p.155202_1 - 155202_8, 2016/10

AA2016-0395.pdf:0.38MB

https://doi.org/10.1103/PhysRevB.94.155202

Times Cited Count：19 Percentile：61.45(Materials Science, Multidisciplinary)

JAEA Reports

TIARA annual report 2003

Advanced Radiation Technology Center

JAERI-Review 2004-025, 374 Pages, 2004/11

JAERI-Review-2004-025-p0001-p0116.pdf:20.67MB
JAERI-Review-2004-025-p0117-p0247.pdf:21.34MB
JAERI-Review-2004-025-p0248-p0374.pdf:23.39MB

This annual report describes research and development activities which have been performed with the JAERI TIARA (Takasaki Ion Accelerators for Advanced Radiation Application) facilities from April 1, 2003 to March 31, 2004. Summary reports of 115 papers and brief descriptions on the status of TIARA in the period are contained. A list of publications, the type of research collaborations and organization of TIARA are also given as appendices.

JAEA Reports

TIARA annual report 2000

Advanced Radiation Technology Center

JAERI-Review 2001-039, 328 Pages, 2001/11

JAERI-Review-2001-039.pdf:41.69MB

no abstracts in English

JAEA Reports

JAERI TIARA annual report 1999

Advanced Radiation Technology Center

JAERI-Review 2000-024, 326 Pages, 2000/10

JAERI-Review-2000-024.pdf:33.65MB

no abstracts in English

JAEA Reports

TIARA annual report 1998

Advanced Radiation Technology Center

JAERI-Review 99-025, p.298 - 0, 1999/10

JAERI-Review-99-025.pdf:23.84MB

no abstracts in English

JAEA Reports

TIARA annual report 1997

JAERI-Review 98-016, 288 Pages, 1998/10

JAERI-Review-98-016.pdf:17.33MB

no abstracts in English

Journal Articles

Effect of pressure on hopping conduction in amorphous Ge alloys

Toda, Naohiro*; Katayama, Yoshinori; Tsuji, Kazuhiko*

Review of High Pressure Science and Technology, 7, p.647 - 649, 1998/03

http://ci.nii.ac.jp/naid/10002691304

The electrical conductivity has been measured at pressures to 8 GPa and temperatures of 77-300K in evaporated amorphous Ge (a-Ge), a-Ge-Cu alloys and a-Ge-Al alloys. The dependence of is well described by a power lw at low temperatures below 150 K, which is expemcted from a multi-phonon tunneling transition process model with weak electron-lattice coupling, rather than the Mott's variable range hopping conduction model. The exponent in the power law changes with increasing pressure. For both a-Ge $_{1-x}$ Cu $_{x}$ and a-Ge $_{1-x}$ Al $_{x}$ alloys, d(ln )/d show positive values in the low pressure region and negative values in the high pressure region. Results are discussed from several hopping conduction models.