Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Yoshigoe, Akitaka; Moritani, Kosuke; Teraoka, Yuden
Japanese Journal of Applied Physics, Part 1, 42(7B), p.4676 - 4679, 2003/07
Times Cited Count：1 Percentile：5.41(Physics, Applied)Many studies of the thermal oxidation on Si(001) surface by O
gas have been already carried out from both experimental and theoretical methods. The oxidation reaction kinetics have been studied by real time photoemission spectroscopy. Most reports, however, were performed at a fixed electron binding energy. We present the study of initial stage of thermal oxidation on Si(001) surface at the O pressure of 1x10
Pa performed by real time O-1s synchrotron radiation photoemission spectroscopy.All experiments were performed at SUREAC2000 at BL23SU in the SPring-8. The pure O gas of 1x10 Pa was fed into the reaction analysis chember through a variable leak valve. The results of oxygen uptake curves obtained by O-1s peak area intensities at the substrate temperature of 855K and 955K indicate that the Langmuir adsorption model provided the best fitting result for the 855K oxidation, whereas the oxidation at 955K was well explained by the autocatalytic reaction model.
/Si(001) systemTeraoka, Yuden; Yoshigoe, Akitaka
OMICRON Nanotechnology Newsletter, 6(1), p.4 - 6, 2002/04
no abstracts in English
reaction dynamics with Si(001) surfaces as observed by synchrotron radiation photoemission spectroscopyTeraoka, Yuden; Yoshigoe, Akitaka
Atomic Collision Research in Japan, No.28, p.97 - 99, 2002/00
The translational kinetic energy of incident molecules is an important factor for the induction of surface reactions. We applied supersonic seed molecular beam techniques and high-energy-resolution photoemission spectroscopy using synchrotron radiation to the Si initial oxidation analysis. We have already found out that the saturated oxygen coverage on H
O-chemisorbed Si(001) surfaces depends on the O incident energy. Two potential energy barriers were confirmed in accordance with the first-principles calculation. An action of the incident energy should be confirmed also on clean Si(001) surfaces. Therefore, the incident energy dependence of the O dissociative chemisorption on the clean Si(001) surface has been investigated by photoemission spectroscopy for Si-2p and O-1s core levels to make clear how the incident energy affects the ultra-thin oxide-layers formation.
molecular beamsTeraoka, Yuden; Yoshigoe, Akitaka
SPring-8 Research Frontiers 2000/2001, p.48 - 50, 2001/00
no abstracts in English
