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Yoshigoe, Akitaka; Moritani, Kosuke; Teraoka, Yuden
Shinku, 46(5), p.424 - 428, 2003/05
In order to study the reaction mechanism of the initial thermal Si(001) oxidation by O
(1
10
Pa) at the surface temperature region between 870K and 1120K, we have performed the
synchrotron radiation photoemission spectroscopy of Si-2p and O-1s levels. The oxygen uptake curves as a function of the oxygen exposure time were analyzed on the basis of kinetics. The Si oxidation states corresponding to the adsorbed oxygen amount were well clarified by the time evolution of Si-2p photoemission spectra.
analysis using synchrotron radiation photoemission spectroscopy for initial oxidation of oxygen preadsorbed Si(001) surfaces induced by supersonic O
molecular beamsYoshigoe, Akitaka; Teraoka, Yuden
Surface and Interface Analysis, 34(1), p.432 - 436, 2002/08
Times Cited Count:3 Percentile:8.33(Chemistry, Physical)no abstracts in English
moleculesTeraoka, Yuden; Yoshigoe, Akitaka
Applied Surface Science, 190(1-4), p.75 - 79, 2002/05
Times Cited Count:12 Percentile:51.94(Chemistry, Physical)no abstracts in English
using synchrotron radiation photoemission spectroscopyYoshigoe, Akitaka; Teraoka, Yuden
Shinku, 45(3), p.204 - 207, 2002/03
no abstracts in English
translational kinetic energy induced oxidation processes of partially-oxidized Si(100) surfacesTeraoka, Yuden; Yoshigoe, Akitaka
Hyomen Kagaku, 22(8), p.530 - 536, 2001/08
no abstracts in English
Si-
core-level spectroscopy using synchrotron radiation for Si(001) initial oxidation by translational kinetic energy of O
moleculesYoshigoe, Akitaka; Teraoka, Yuden
Transactions of the Materials Research Society of Japan, 26(2), p.755 - 758, 2001/06
no abstracts in English
observation of oxidation states on Si(001)-2
1 during supersonic O
molecular beam irradiationYoshigoe, Akitaka; Teraoka, Yuden
Atomic Collision Research in Japan, No.27, p.80 - 82, 2001/00
no abstracts in English
molecular beamsTeraoka, Yuden; Yoshigoe, Akitaka
Proceedings of 25th International Conference on the Physics of Semiconductors, p.321 - 322, 2000/00
no abstracts in English