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Teraoka, Yuden
Denki Gakkai Gijutsu Hokoku, (970), p.10 - 15, 2004/07
Si(001) surfaces are oxidized by O
molecules. The reaction schemes (oxide-layers formation, SiO desorption, their coexistence) are changed depending on the surface temperature and the gas pressure. The translational kinetic energy of incident O molecules is recognizing to be an important parameter for controlling surface chemical reactions. The issues concerning translational kinetic energy induced oxidation by O molecules at room temperature, effects of translational kinetic energy for SiO desorption processes at higher temperature than 1000 K, reaction mechanisms for coexistence of the SiO desorption and the oxide-layers formation in the temperature region from 900 K to 1000 K are reviewed.
Teraoka, Yuden; Yoshigoe, Akitaka; Moritani, Kosuke
Shinku, 47(4), p.301 - 307, 2004/04
Recent research results on translational kinetic energy effects of incident oxygen molecules for Si(001) oxidation are summalized and introduced. The variation of surface temperature dependence of SiO desorption yield, oxygen uptake curves, and chemical bonding states depending on translational kinetic energy of oxygen molecules is described concretely. Eapecially, the translational kinetic energy effects on chemical reaction processes of concurrent oxide-layers formation and SiO desorption are discussed.
/Si(001) system observed by SiO mass spectrometry and synchrotron radiation photoemission spectroscopyTeraoka, Yuden; Moritani, Kosuke; Yoshigoe, Akitaka
Applied Surface Science, 216(1-4), p.8 - 14, 2003/06
Times Cited Count：6 Percentile：34.98(Chemistry, Physical)The experiments concerning the oxidation of Si(001) were performed at the surface reaction analysis apparatus, installed at the beamline BL23SU in the SPring-8. The SiO desorb remarkably at surface temperature of 1000 K. The desorption yield increased with increasing the incident energy of O. On the other hand, the desorption yield increased with decreasing the incident energy in the temperature region lower than 1000 K. Oxygen uptake curves observed by O-1s photoemission measurements corresponded to the SiO desorption features. These facts reveal that the passive oxidation coexists with the SiO desorption in the temperature region from 900 K to 1000 K.
adsorption and SiO desorption by incident energy of O molecules in the O/Si(001) surface reaction systemTeraoka, Yuden; Yoshigoe, Akitaka; Moritani, Kosuke
Atomic Collision Research in Japan, No.29, p.68 - 70, 2003/00
There are two surface chemical reaction modes in the O/Si(001) system, that is, oxide-layers formation and SiO desorption. We have found that these reaction modes could be selected by changing translational kinetic energy of incident O molecules.
Morita, Kenji*; Suzuki, Hironori*; Soda, Kazuo*; Iwahara, Hiroiku*; Nakamura, Hirofumi; Hayashi, Takumi; Nishi, Masataka
Journal of Nuclear Materials, 307-311(2), p.1461 - 1465, 2002/12
Times Cited Count：2 Percentile：16.39(Materials Science, Multidisciplinary)no abstracts in English
Sato, Tadashi
Radiochimica Acta, 46, p.101 - 108, 1989/00
no abstracts in English
; ; Ozawa, K.;
JAERI-M 84-094, 174 Pages, 1984/05
no abstracts in English
Ozawa, K.; ;
JAERI-M 84-089, 139 Pages, 1984/05
no abstracts in English
;
Journal of Nuclear Science and Technology, 20(6), p.503 - 510, 1983/00
Times Cited Count：3 Percentile：43.85(Nuclear Science & Technology)no abstracts in English
; ;
J.Vac.Sci.Technol., 15(1), p.103 - 110, 1978/01
no abstracts in English
