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Journal Articles

Advanced concepts in TRISO fuel

Minato, Kazuo; Ogawa, Toru

Comprehensive Nuclear Materials, 2nd Edition, Vol.5, p.334 - 360, 2020/08

TRISO coated particle fuel has been developed for the high temperature gas-cooled reactors, which consists of microspherical fuel kernel and coating layers of pyrolytic carbon and silicon carbide. To improve the high temperature stability, the resistance to the chemical attack by fission products and the retention of fission products of the TRISO coated particle fuels, several types of advanced fuels were proposed and tested. Coated particle fuels for fast reactors were also proposed and tested. In this paper, fuel designs, fabrications, characterization techniques and fuel performance of these advanced coated particle fuels are systematically described. This is the updated version of the paper having the same title in Comprehensive Nuclear Materials published in 2012.

Journal Articles

Oxidation of silicon carbide in steam studied by laser heating

Pham, V. H.; Nagae, Yuji; Kurata, Masaki; Furumoto, Kenichiro*; Sato, Hisaki*; Ishibashi, Ryo*; Yamashita, Shinichiro

Proceedings of International Nuclear Fuel Cycle Conference / Light Water Reactor Fuel Performance Conference (Global/Top Fuel 2019) (USB Flash Drive), p.670 - 674, 2019/09

Journal Articles

Technical basis of accident tolerant fuel updated under a Japanese R&D project

Yamashita, Shinichiro; Nagase, Fumihisa; Kurata, Masaki; Nozawa, Takashi; Watanabe, Seiichi*; Kirimura, Kazuki*; Kakiuchi, Kazuo*; Kondo, Takao*; Sakamoto, Kan*; Kusagaya, Kazuyuki*; et al.

Proceedings of 2017 Water Reactor Fuel Performance Meeting (WRFPM 2017) (USB Flash Drive), 10 Pages, 2017/09

In Japan, the research and development (R&D) project on accident tolerant fuel and other components (ATFs) of light water reactors (LWRs) has been initiated in 2015 for establishing technical basis of ATFs. The Japan Atomic Energy Agency (JAEA) has coordinated and carried out this ATF R&D project in cooperation with power plant providers, fuel venders and universities for making the best use of the experiences, knowledges in commercial uses of zirconium-base alloys (Zircaloy) in LWRs. ATF candidate materials under consideration in the project are FeCrAl steel strengthened by dispersion of fine oxide particles(FeCrAl-ODS) and silicon carbide (SiC) composite, and are expecting to endure severe accident conditions in the reactor core for a longer period of time than the Zircaloy while maintaining or improving fuel performance during normal operations. In this paper, the progresses of the R&D project are reported.

Journal Articles

Thermal stability of deep-level defects in high-purity semi-insulating 4H-SiC substrate studied by admittance spectroscopy

Iwamoto, Naoya*; Azarov, A.*; Oshima, Takeshi; Moe, A. M. M.*; Svensson, B. G.*

Materials Science Forum, 858, p.357 - 360, 2016/05

Journal Articles

Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation

Lohrmann, A.*; Castelletto, S.*; Klein, J. R.*; Oshima, Takeshi; Bosi, M.*; Negri, M.*; Lau, D. W. M.*; Gibson, B. C.*; Prawer, S.*; McCallum, J. C.*; et al.

Applied Physics Letters, 108(2), p.021107_1 - 021107_4, 2016/01

 Times Cited Count:34 Percentile:82.66(Physics, Applied)

Journal Articles

Swelling of radiation-cured polymer precursor powder for silicon carbide by pyrolysis

Takeyama, Akinori; Idesaki, Akira; Sugimoto, Masaki; Yoshikawa, Masahito

Journal of Asian Ceramic Societies (Internet), 3(4), p.402 - 406, 2015/12

Journal Articles

Defect engineering in silicon carbide; Single photon sources, quantum sensors and RF emitters

Kraus, H.; Simin, D.*; Fuchs, F.*; Onoda, Shinobu; Makino, Takahiro; Dyakonov, V.*; Oshima, Takeshi

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.176 - 179, 2015/11

Journal Articles

A Development of super radiation-hardened power electronics using silicon carbide semiconductors; Toward MGy-class radiation resistivity

Hijikata, Yasuto*; Mitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi*; Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; et al.

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.130 - 133, 2015/11

Journal Articles

In-situ monitoring of ion-beam luminescence of Si-O-C(-H) ceramics under proton-beam irradiation

Narisawa, Masaki*; Koka, Masashi; Takeyama, Akinori; Sugimoto, Masaki; Idesaki, Akira; Sato, Takahiro; Hokazono, Hiroki*; Kawai, Taketoshi*; Iwase, Akihiro*

Journal of the Ceramic Society of Japan, 123(9), p.805 - 808, 2015/09

Journal Articles

Isolated electron spins in silicon carbide with millisecond coherence times

Christle, D.*; Falk, A.*; Andrich, A.*; Klimov, P.*; Hassan, J.*; Son, N. T.*; Janz$'e$n, E.*; Oshima, Takeshi; Awschalom, D.*

Nature Materials, 14(2), p.160 - 163, 2015/02

 Times Cited Count:295 Percentile:99.16(Chemistry, Physical)

Journal Articles

Coherent control of single spins in silicon carbide at room temperature

Widmann, M.*; Lee, S.-Y.*; Rendler, T.*; Son, N. T.*; Fedder, H.*; Paik, S.*; Yang, L.-P.*; Zhao, N.*; Yang, S.*; Booker, I.*; et al.

Nature Materials, 14(2), p.164 - 168, 2015/02

 Times Cited Count:383 Percentile:99.52(Chemistry, Physical)

Journal Articles

Room temperature quantum emission from cubic silicon carbide nanoparticles

Castelletto, S.*; Johnson, B. C.*; Zachreson, C.*; Beke, D.*; Balogh, I.*; Oshima, Takeshi; Aharonovich, I.*; Gali, A.*

ACS Nano, 8(8), p.7938 - 7947, 2014/08

Journal Articles

Investigation of single-event damages on silicon carbide (SiC) power MOSFETs

Mizuta, Eiichi*; Kuboyama, Satoshi*; Abe, Hiroshi; Iwata, Yoshiyuki*; Tamura, Takashi*

IEEE Transactions on Nuclear Science, 61(4), p.1924 - 1928, 2014/08

 Times Cited Count:77 Percentile:99.07(Engineering, Electrical & Electronic)

Journal Articles

Observation of deep levels and their hole capture behavior in p-type 4H-SiC epilayers with and without electron irradiation

Kato, Masashi*; Yoshihara, Kazuki*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

Japanese Journal of Applied Physics, 53(4S), p.04EP09_1 - 04EP09_5, 2014/04

 Times Cited Count:6 Percentile:28.25(Physics, Applied)

Journal Articles

Annealing of electron irradiated, thick, ultrapure 4H SiC between 1100$$^{circ}$$C and 1500$$^{circ}$$C and measurements of lifetime and photoluminescence

Klahold, W. M.*; Devaty, R. P.*; Choyke, W. J.*; Kawahara, Kotaro*; Kimoto, Tsunenobu*; Oshima, Takeshi

Materials Science Forum, 778-780, p.273 - 276, 2014/02

Journal Articles

Impact of carrier lifetime on efficiency of photolytic hydrogen generation by p-type SiC

Miyake, Keiko*; Yasuda, Tomonari*; Kato, Masashi*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

Materials Science Forum, 778-780, p.503 - 506, 2014/02

Journal Articles

Identification of structures of the deep levels in 4H-SiC

Nakane, Hiroki*; Kato, Masashi*; Ichimura, Masaya*; Oshima, Takeshi

Materials Science Forum, 778-780, p.277 - 280, 2014/02

Journal Articles

Synthesis of a minute SiC product from polyvinylsilane with radiation curing, 2; Ceramization process of radiation cured polyvinylsilane

Idesaki, Akira; Sugimoto, Masaki; Yoshikawa, Masahito; Tanaka, Shigeru; Narisawa, Masaki*; Okamura, Kiyohito*; Ito, Masayoshi*

Journal of Materials Science, 42(1), p.130 - 135, 2007/01

 Times Cited Count:3 Percentile:14.6(Materials Science, Multidisciplinary)

We have synthesized minute SiC products from polyvinylsilane (PVS), which is a liquid organosilicon polymer, with radiation curing. Since there is a close relationship between the properties of obtained SiC products and pyrolysis condition, it is important to investigate the ceramization process of PVS in order to find out the optimum pyrolysis condition. In this paper, the ceramization process of the PVS cured by $$gamma$$-ray irradiation at room temperature was investigated by gas analysis, thermogravimetric analysis, density measurement, and so on. It was found that the ceramization of $$gamma$$-ray cured PVS starts above 500K, and that drastic organic-inorganic conversion occurs in the temperature range of 700-1100K. According to the results of the changes of mass and density, it was found that the volume shrinkage of PVS during the curing and pyrolysis processes is 80%. The SiC obtained by pyrolysis at 1573K showed the density of 2.50g/cm$$^{3}$$ and microvickers hardness of 31.6GPa.

Journal Articles

Structure of sub-monolayered silicon carbide films

Baba, Yuji; Sekiguchi, Tetsuhiro; Shimoyama, Iwao; Nath, K. G.

Applied Surface Science, 237(1-4), p.176 - 180, 2004/10

 Times Cited Count:7 Percentile:38.08(Chemistry, Physical)

no abstracts in English

Journal Articles

Synthesis of a minute SiC product from polyvinylsilane with radiation curing, 1; Radiation curing of polyvinylsilane

Idesaki, Akira; Sugimoto, Masaki; Tanaka, Shigeru; Narisawa, Masaki*; Okamura, Kiyohito*; Ito, Masayoshi*

Journal of Materials Science, 39(18), p.5689 - 5694, 2004/09

 Times Cited Count:7 Percentile:31.37(Materials Science, Multidisciplinary)

Irradiation effect of $$gamma$$-ray on polyvinylsilane (PVS), which is a liquid organosilicon polymer, was investigated and the optimum curing condition to synthesize a minute SiC product with radiation curing was discussed. Room temperature and liquid nitrogen temperature (77K) were examined as the irradiation temperature. In both cases, the cured PVS maintaining its formed shape could be obtained by $$gamma$$-ray irradiation under vacuum, and the cured PVS in solid state at room temperature was obtained by irradiation with dose of above 3-4MGy. It was found that the efficiency of crosslinking in case of the irradiation at room temperature is higher than that in case of irradiation at 77K. The PVS injected into a mold was irradiated by $$gamma$$-ray with dose of 3.6MGy at room temperature under vacuum, and pyrolyzed at 1273 K in Ar gas atmosphere. As a result, minute SiC products which had similar shapes to the mold and the sizes of 30-60$$mu$$m were obtained.

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