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Journal Articles

Oxidation of silicon carbide in steam studied by laser heating

Pham, V. H.; Nagae, Yuji; Kurata, Masaki; Furumoto, Kenichiro*; Sato, Hisaki*; Ishibashi, Ryo*; Yamashita, Shinichiro

Proceedings of International Nuclear Fuel Cycle Conference / Light Water Reactor Fuel Performance Conference (Global/Top Fuel 2019) (USB Flash Drive), p.670 - 674, 2019/09

Journal Articles

Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation

Lohrmann, A.*; Castelletto, S.*; Klein, J. R.*; Oshima, Takeshi; Bosi, M.*; Negri, M.*; Lau, D. W. M.*; Gibson, B. C.*; Prawer, S.*; McCallum, J. C.*; et al.

Applied Physics Letters, 108(2), p.021107_1 - 021107_4, 2016/01

 Times Cited Count:43 Percentile:83.44(Physics, Applied)

Journal Articles

Study of the oxidation for Si nanostructures using synchrotron radiation photoemission spectroscopy

Nath, K. G.; Shimoyama, Iwao; Sekiguchi, Tetsuhiro; Baba, Yuji

Applied Surface Science, 234(1-4), p.234 - 239, 2004/07

 Times Cited Count:7 Percentile:36.94(Chemistry, Physical)

Here we report oxidization properties of Si nanostructures grown on graphite. Si 1s X-ray photoemission spectra using synchrotron radiation are used in order to understand the oxidization pathways. Several Si films, such as 0.4, 2, 5.5 & Aring; were grown on highly oriented pyrolitic graphite (HOPG). In the case of a 0.4 & Aring; Si on HOPG, where different types of Si nanostructures in the form of nanoclusters are present, oxygen reactivity is nearly zero. In contrast, the thick film (5.5 & Aring;), where a bulk-type phase is present, shows a higher degree of reactivity. The results are discussed on the basis of nanostructure geometry, number of constituting Si atoms and cluster size.

Journal Articles

Chemical reaction dynamics in oxidation processes of Si(001) surface at high temperature

Teraoka, Yuden; Yoshigoe, Akitaka; Moritani, Kosuke

Shinku, 47(4), p.301 - 307, 2004/04

Recent research results on translational kinetic energy effects of incident oxygen molecules for Si(001) oxidation are summalized and introduced. The variation of surface temperature dependence of SiO desorption yield, oxygen uptake curves, and chemical bonding states depending on translational kinetic energy of oxygen molecules is described concretely. Eapecially, the translational kinetic energy effects on chemical reaction processes of concurrent oxide-layers formation and SiO desorption are discussed.

Journal Articles

Development of silicon carbide micro-tube from precursor polymer by radiation oxidation

Sugimoto, Masaki; Idesaki, Akira; Tanaka, Shigeru; Okamura, Kiyohito*

Key Engineering Materials, 247, p.133 - 136, 2003/00

no abstracts in English

Journal Articles

In-situ photoemission spectroscopy for chemical reaction dynamics study of Si(001) oxidation by using high-energy-resolution synchrotron radiation

Teraoka, Yuden; Yoshigoe, Akitaka

Oyo Butsuri, 71(2), p.1523 - 1527, 2002/12

The translational kinetic energy of incident molecules is an important parameter for the study of surface chemical reaction mechanisms. New adsorption reactions, induced by the O$$_{2}$$ translational kinetic energy of several eV, have been found in the O$$_{2}$$/Si(001) system by applying the surface photoemission spectroscopy with supersonic molecular beam techniques and the high-energy-resolution synchrotron radiation. The termination of dangling bonds affected dominantly the oxidation of dimer backbonds. By controlling the translational kinetic energy of incident O$$_{2}$$ molecules, the formation of oxide-layers with a sub-nanometer scale is possible at room temperature.

JAEA Reports

Air oxidation behavior of fuel for the High Temperature Engineering Test Reactor(HTTR)

; Hayashi, Kimio; Fukuda, Kosaku

JAERI-M 92-114, 20 Pages, 1992/08

JAERI-M-92-114.pdf:1.06MB

no abstracts in English

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