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Journal Articles

Single crystal growth and crystal structure of ThRhIn$$_5$$ and LuCoGa$$_5$$

Matsuda, Tatsuma; Haga, Yoshinori; Sakai, Hironori; Ikeda, Shugo; Onuki, Yoshichika

Journal of the Physical Society of Japan, 75(Suppl.), p.85 - 87, 2006/08

Recently quasi-two-dimensional electron state in rare earth and actinide compounds with HoCoGa$$_5$$-type tetragonal crystal structure was attracted a lot attention in relation to heavy fermion superconductivity observed in CeCoIn$$_5$$, CeIrIn$$_5$$ and PuCoGa$$_5$$. In order to elucidate the role of $$f$$ electron in these compounds, it is necessary to compare their electronic state with that of lanthanum and thorium compounds which do not possess the $$f$$-electrons. The number of valence electrons in the thorium compound is the same as that of the corresponding 4$$f^1$$-itinerant cerium compound. We have recently tried to make thorium 115 compounds by indium flux method and have succeeded in discovering the new material of ThRhIn$$_5$$. Crystal structure and quality were confirmed by X-ray diffraction, fluorescent X-ray analysis and EPMA. The lattice parameters were determined to be 4.681(6) $AA and 7.54(1) AA for $a$$ and $$c$$, respectively. The positional parameter $$z$$ of In(4$$i$$) site was also determined to be $$z=0.3069(1)$$.

Journal Articles

Single crystal growth and observation of the de Haas-van Alphen effect in ThIn$$_3$$

Matsuda, Tatsuma; Haga, Yoshinori; Shishido, Hiroaki*; Ikeda, Shugo; Harima, Hisatomo*; Settai, Rikio*; Onuki, Yoshichika

Physica B; Condensed Matter, 378-380, p.1021 - 1022, 2006/05

 Times Cited Count:0 Percentile:0(Physics, Condensed Matter)

We have succeeded in growing a high-quality single crystal of ThIn$$_3$$ with the cubic structure by the In-flux method and measured the de Haas-van Alphen (dHvA) effect. Several dHvA branches were observed, ranging from 9.0 $$times$$ 10$$^6$$ to 9.37 $$times$$ 10$$^8$$ Oe. The experimental results are compared to the dHvA results of CeIn$$_3$$ under pressure of 2.7 GPa, together with the results of energy band calculations.

Journal Articles

Electrical and magnetic properties of a single crystal UCu$$_2$$Si$$_2$$

Matsuda, Tatsuma; Haga, Yoshinori; Ikeda, Shugo; Galatanu, A.; Yamamoto, Etsuji; Shishido, Hiroaki*; Yamada, Mineko*; Yamaura, Junichi*; Hedo, Masato*; Uwatoko, Yoshiya*; et al.

Journal of the Physical Society of Japan, 74(5), p.1552 - 1556, 2005/05

 Times Cited Count:21 Percentile:70.75(Physics, Multidisciplinary)

We have succeeded in growing a high-quality single crystal of UCu$$_2$$Si$$_2$$ with the tetragonal structure by the Sn-flux method and measured the electrical resistivity, magnetic susceptibility, magnetization and specific heat. UCu$$_2$$Si$$_2$$ is found to order antiferromagnetically below $$T_{rm N}$$ = 106 K, and follows a successive ferromagnetic ordering at $$T_{rm C}$$ = 100 K. The magnetic properties are highly anisotropic, reflecting the crystal structure. An easy-axis of magnetization is found to be the [001] direction ($$c$$-axis) both in the antiferromagnetic and ferromagnetic phases, while the [100] direction ($$a$$-axis) corresponds to the hard-axis in magnetization. The magnetization curve in the antiferromagnetic phase indicates a clear metamagnetic transition at a low field of about 1 kOe and changes smoothly into a ferromagnetic magnetization curve below $$T_{rm C}$$ = 100 K. The saturation moment is determined as 1.75$$mu_{rm B}$$/U at 2 K. The electronic specific heat coefficient is also determined as 20 mJ/K$$^2$$$$cdot$$mol.

Journal Articles

Small saturation moment due to the crystalline electric field effect for $$T_h$$ site symmetry in the ferromagnet UFe$$_4$$P$$_{12}$$

Matsuda, Tatsuma; Galatanu, A.; Haga, Yoshinori; Ikeda, Shugo; Yamamoto, Etsuji; Hedo, Masato*; Uwatoko, Yoshiya*; Takeuchi, Tetsuya*; Sugiyama, Kiyohiro*; Kindo, Koichi*; et al.

Journal of the Physical Society of Japan, 73(9), p.2533 - 2538, 2004/09

 Times Cited Count:8 Percentile:49.43(Physics, Multidisciplinary)

Electrical resistivity, specific heat, magnetic susceptibility and high-field magnetization measurements have been performed on the ferromagnet UFe$$_{4}$$P$$_{12}$$ with the cubic crystal structure. The ferromagnetic ordering at $$T_{rm C}$$,=,3.1 K, a small saturation moment of 1.3 $$mu_{rm B}$$/U, together with the temperature dependence of the magnetic susceptibility, are found to be well explained by considering the 5$$f^2$$ crystalline electric field schemes for $$T_{h}$$ site symmetry and the magnetic exchange interaction.

Journal Articles

Single crystal growth and magnetic properties of ferromagnetic URhGe$$_2$$

Matsuda, Tatsuma; Haga, Yoshinori; Tokiwa, Yoshifumi; Andrei, G.; Yamamoto, Etsuji; Okubo, Tomoyuki*; Onuki, Yoshichika

Acta Physica Polonica B, 34(2), p.1071 - 1074, 2003/02

We have successfully grown a single crystal of uranium intermetallic compound URhGe$$_2$$. The temperature dependence of electrical resistivity shows highly anisotropic behavior. Two anomalies, which correspond to the magnetic ordering temperatures, were observed in the resistivity, magnetic susceptibility and specific heat measurements at $$T_{rm M1}$$= 30 K and $$T_{rm M2}$$=25 K. The magnetic susceptibility also shows a large uniaxial anisotropy with a magnetic easy-axis along the [010] direction.

Journal Articles

Crystal growth mechanism of YBa$$_{2}$$Cu$$_{3}$$O$$_{x}$$ from coexisting region of solid with melt

Asaoka, Hidehito; *; Noda, Kenji

Japanese Journal of Applied Physics, 33(7A), p.L923 - L926, 1994/07

 Times Cited Count:5 Percentile:35.73(Physics, Applied)

no abstracts in English

Journal Articles

Growth of large isometric YBa$$_{2}$$Cu$$_{3}$$O$$_{x}$$ single crystals from coexisting region of solid with melt in Y$$_{2}$$O$$_{3}$$ crucibles

Asaoka, Hidehito; *; *; *; *; *

Japanese Journal of Applied Physics, 32(3A), p.1091 - 1096, 1993/03

 Times Cited Count:54 Percentile:90.71(Physics, Applied)

no abstracts in English

Journal Articles

Observation of YBa$$_{2}$$Cu$$_{3}$$O$$_{x}$$ crystal growth from solid-liquid mixtures by using quenching experiments

Asaoka, Hidehito; Noda, Kenji; *

Nihon Kessho Seicho Gakkai-Shi, 20(2), 92 Pages, 1993/00

no abstracts in English

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