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Yoshigoe, Akitaka; Moritani, Kosuke; Teraoka, Yuden
Japanese Journal of Applied Physics, Part 1, 42(7B), p.4676 - 4679, 2003/07
Times Cited Count:1 Percentile:5.42(Physics, Applied)Many studies of the thermal oxidation on Si(001) surface by O
gas have been already carried out from both experimental and theoretical methods. The oxidation reaction kinetics have been studied by real time photoemission spectroscopy. Most reports, however, were performed at a fixed electron binding energy. We present the study of initial stage of thermal oxidation on Si(001) surface at the O
pressure of 1x10
Pa performed by real time O-1s synchrotron radiation photoemission spectroscopy.All experiments were performed at SUREAC2000 at BL23SU in the SPring-8. The pure O
gas of 1x10
Pa was fed into the reaction analysis chember through a variable leak valve. The results of oxygen uptake curves obtained by O-1s peak area intensities at the substrate temperature of 855K and 955K indicate that the Langmuir adsorption model provided the best fitting result for the 855K oxidation, whereas the oxidation at 955K was well explained by the autocatalytic reaction model.
molecular beams under 1000 KTeraoka, Yuden; Yoshigoe, Akitaka; Moritani, Kosuke
Japanese Journal of Applied Physics, Part 1, 42(7B), p.4671 - 4675, 2003/07
Times Cited Count:4 Percentile:19.61(Physics, Applied)The oxidation reaction mechanisms for Si(001) by O
molecules have been investigated in a surface temperature region from 860 K to 1300 K and in an incident energy region from 0.6 eV to 3.0 eV. Synchrotron Radiation photoemission spectroscopy was used for surface analysis. Si-2p photoemission spectra were measured during molecular beam irradiation so that their dependences on surface temperature and incident energy were clarified. SiO molecules, desorbed from the surface at high temperature region, were also detected by a quadrupole mass analyzer using
O
molecular beams to measure SiO desorption yield depending on surface temperature and incident energy. Consequently, a reaction scheme, oxide layers formation, etching, and coexistence of both reactions, is determined by the incident energy under 1000 K.
Takakuwa, Yuji*; Ishizuka, Shinji*; Yoshigoe, Akitaka; Teraoka, Yuden; Yamauchi, Yasuhiro*; Mizuno, Yoshiyuki*; Tonda, Hideki*; Homma, Teiichi*
Applied Surface Science, 216(1-4), p.395 - 401, 2003/06
Times Cited Count:19 Percentile:64.48(Chemistry, Physical)Real-time in-situ observation using photoelectron spectroscopy for elementary processes of Ti(0001) oxidation by O
molecules has been performed at the surface reaction analysis apparatus installed at the BL23SU in the SPring-8. And the real-time observation has been also performed by RHEED-AES methods at Tohoku University. The partial pressure region of oxygen was from 2x10
Torr to 8x10
Torr. The surface temperature was 473 K and 673 K. The variation from clean Ti surface toward TiO
was comfirmed by observation of Ti-2p and O-1s photoelectron spectra. Reflected electron intensity and O-KLL Auger electron intensity oscillated in the RHEED-AES measurements. These facts revealed that the surface morphological change of the oxidized Ti(0001) surface was associated not only with a disappearance of the surface metallic layer but also with a change of the oxidation state.
/Si(001) system observed by SiO mass spectrometry and synchrotron radiation photoemission spectroscopyTeraoka, Yuden; Moritani, Kosuke; Yoshigoe, Akitaka
Applied Surface Science, 216(1-4), p.8 - 14, 2003/06
Times Cited Count:6 Percentile:34.50(Chemistry, Physical)The experiments concerning the oxidation of Si(001) were performed at the surface reaction analysis apparatus, installed at the beamline BL23SU in the SPring-8. The SiO desorb remarkably at surface temperature of 1000 K. The desorption yield increased with increasing the incident energy of O
. On the other hand, the desorption yield increased with decreasing the incident energy in the temperature region lower than 1000 K. Oxygen uptake curves observed by O-1s photoemission measurements corresponded to the SiO desorption features. These facts reveal that the passive oxidation coexists with the SiO desorption in the temperature region from 900 K to 1000 K.
gas on Si(0 0 1) surface by means of synchrotron radiation Si-2p photoemission spectroscopyYoshigoe, Akitaka; Moritani, Kosuke; Teraoka, Yuden
Applied Surface Science, 216(1-4), p.388 - 394, 2003/06
Times Cited Count:9 Percentile:44.73(Chemistry, Physical)It is well known that the initial Si(0 0 1) oxidation by O
gas is an important reaction system because it is usually used to form gate-oxide films on MOSFET. With decreasing the size of ULSI, it is necessary to control the surface reaction with atomic scales. In this study, we report
observation of thermal oxidation using O
gas on Si(0 0 1) surface by means of synchrotron radiation photoemission spectroscopy at the soft x-ray beamline, BL23SU, in the SPring-8. We clarified the chemisorption processes of O
on Si(0 0 1) surface over 773K regions at the initial oxidation stages from the results of Si2p core-level shifts. The fundamental understanding of surface reaction is expected to contribute the development of the future nanotechnology.
Wei, P.; Xu, Y.; Nagata, Shinji*; Narumi, Kazumasa; Naramoto, Hiroshi
Nuclear Instruments and Methods in Physics Research B, 206(1-4), p.233 - 236, 2003/05
Times Cited Count:6 Percentile:42.28(Instruments & Instrumentation)no abstracts in English
Takakuwa, Yuji*; Ishizuka, Shinji*; Yoshigoe, Akitaka; Teraoka, Yuden; Mizuno, Yoshiyuki*; Tonda, Hideki*; Homma, Teiichi*
Nuclear Instruments and Methods in Physics Research B, 200, p.376 - 381, 2003/01
Times Cited Count:10 Percentile:54.92(Instruments & Instrumentation)no abstracts in English
Baba, Yuji
Trends in Vacuum Science & Technology, Vol.5, p.45 - 74, 2002/10
This article reviews recent works on the ion desorption from solid surfaces induced by the irradiation of soft X-rays ranging from 100 eV to 3 keV. The data presented here are focused on the positive ion desorption from adsorbed, condensed, and solid molecules following the core-level excitations. The element-specific and site-specific fragment-ion desorptions are clearly realized, when we tune the photon energy at the core-to-valence resonance regions. The specificity of the ion desorption more clearly shows up following the deep-core excitations, i.e., 1s
4p resonant excitations in third-row elements, rather than the shallow-core excitations. Since the main decay channels after the core-level excitation are the Auger transitions, the Auger decay spectra excited by the photons around the core-level thresholds are also presented for some of the adsorbed systems. The mechanism of the observed highly specific ion desorption is discussed on the basis of the photon-energy dependencies of the electron and ion yields and the analysis of the Auger decay spectra.
molecular beamsTeraoka, Yuden; Yoshigoe, Akitaka
Hyomen Kagaku, 23(9), p.553 - 561, 2002/09
no abstracts in English
ions, 1; Production of a spectroscopic system and measured absorption spectrumSugiyama, Akira; Fukuyama, Hiroyasu
JAERI-Tech 2002-057, 27 Pages, 2002/07
no abstracts in English
-energy analysis system for fuel and fission gas behavior during High Temperature Engineering Test Reactor operationUeta, Shohei; Tobita, Tsutomu*; Takahashi, Masashi*; Sawa, Kazuhiro
JAERI-Tech 2002-055, 24 Pages, 2002/07
no abstracts in English
Nagano, Tetsushi; Isobe, Hiroshi*; Nakashima, Satoru*; Ashizaki, Midori*
Applied Spectroscopy, 56(5), p.651 - 657, 2002/05
Times Cited Count:11 Percentile:51.96(Instruments & Instrumentation)no abstracts in English
Kinouchi, Nobuyuki; Oishi, Tetsuya; Noguchi, Hiroshi; Yoshida, Makoto; Kato, Shohei; Ito, Katsuhito*
Radioisotopes, 51(2), p.71 - 77, 2002/02
We have developed an air monitor which is possible to measure rapidly and sensitively the concentration of plutonium for the environmental monitoring at an accident of a nuclear reprocessing plant. The monitor is designed to collect airborne plutonium by drawing the ambient air through a filter and to detect the activity by alpha spectroscopy. The following two methods are equipped with the monitor: continuous measurement at atomospheric pressure and batch measurement at vacuum. The description of the air monitor and the results of performance test are reported.
SOS-regulated UmuD
proteinSutton, M. D.*; Guzzo, A.*; Narumi, Issei; Costanzo, M.*; Altenbach, C.*; Ferentz, A. E.*; Hubbell, W. L.*; Walker, G. C.*
DNA Repair, 1(1), p.77 - 93, 2002/01
UmuD
protein is a regulatory subunit of
DNA polymerase V. This protein forms a complex with UmuC protein, a catalytic subunit of DNA polymerase V, and plays a important role in error-prone translesion DNA synthesis, which serves as the mechanistic basis for most DNA-damaging agent and UV light mutagenesis. In this paper, based on the results of a combination of experimental studies, we have developed a refined model for the structure of the UmuD
homodimer. Implications of the structural change of UmuD
protein with respect to its roles in managing the action of DNA polymease V are discussed.
Sasaki, Teikichi; Chugan, Nobuhiko*
Hyomen Kagaku, 22(10), p.43 - 50, 2001/10
no abstracts in English
Kudo, Hiroshi*; Kumaki, T.*; Haruyama, K.*; Tsukamoto Y.*; Seki, Seiji*; Naramoto, Hiroshi
Nuclear Instruments and Methods in Physics Research B, 174(4), p.512 - 518, 2001/05
Times Cited Count:1 Percentile:12.66(Instruments & Instrumentation)no abstracts in English
translational energy using synchrotron radiationTeraoka, Yuden; Yoshigoe, Akitaka
Atomic Collision Research in Japan, No.27, p.77 - 79, 2001/00
no abstracts in English
and Ni on the MgO(100) single crystalVacik, J.; Naramoto, Hiroshi; Narumi, Kazumasa; Yamamoto, Shunya; Miyashita, Kiyoshi*
Materials Research Society Symposium Proceedings, Vol.648, p.P3.50.1 - P3.50.6, 2001/00
None
) of
UTsutsui, Satoshi*; Nasu, Saburo*; Nakada, Masami; ; Saeki, Masakatsu; ; ; Nakamura, Akio
Journal of the Physical Society of Japan, 67(8), p.2641 - 2644, 1998/08
Times Cited Count:8 Percentile:53.16(Physics, Multidisciplinary)no abstracts in English
Nakashima, Mikio; Sagawa, Chiaki
Radiation Physics and Chemistry, 53(1), p.31 - 36, 1998/00
Times Cited Count:1 Percentile:14.55(Chemistry, Physical)no abstracts in English