Corrigendum to "Real time observation of oxygen chemisorption states on Si(001)-21 during supersonic oxygen molecular beam irradiation"

Teraoka, Yuden; Yoshigoe, Akitaka

Applied Surface Science, 346, P. 580, 2015/08

https://doi.org/10.1016/j.apsusc.2015.02.145

Corrigendum to "Si 2p and O 1s photoemission from oxidized Si(001) surfaces depending on translational kinetic energy of incident O molecules"

Teraoka, Yuden; Yoshigoe, Akitaka

Applied Surface Science, 343, P. 212, 2015/07

https://doi.org/10.1016/j.apsusc.2015.02.146

Erratum; Oxidation of aqueous HF-treated Si(001) surface induced by translational kinetic energy of O at room temperature

Yoshigoe, Akitaka; Teraoka, Yuden

Japanese Journal of Applied Physics, 54(3), P. 039201_1, 2015/03

https://doi.org/10.7567/JJAP.54.039201

Erratum; Initial oxidation of Si(001) induced by translational kinetic energy of O supersonic molecular beams

Yoshigoe, Akitaka; Sano, Mutsumi*; Teraoka, Yuden

Japanese Journal of Applied Physics, 54(3), P. 039203_1, 2015/03

https://doi.org/10.7567/JJAP.54.039203

Erratum to "In-situ Si-2p core-level spectroscopy using synchrotron radiation for initial oxidation on Si(001) surfaces induced by translational kinetic energy of O molecules"

Teraoka, Yuden; Yoshigoe, Akitaka

Transactions of the Materials Research Society of Japan, 40(1), P. 85, 2015/03

http://doi.org/10.14723/tmrsj.40.85

Analysis of surface chemical reaction dynamics by using high brilliance and high energy-resolution synchrotron radiation

Teraoka, Yuden

Denki Gakkai Gijutsu Hokoku, (970), p.10 - 15, 2004/07

Si(001) surfaces are oxidized by O molecules. The reaction schemes (oxide-layers formation, SiO desorption, their coexistence) are changed depending on the surface temperature and the gas pressure. The translational kinetic energy of incident O molecules is recognizing to be an important parameter for controlling surface chemical reactions. The issues concerning translational kinetic energy induced oxidation by O molecules at room temperature, effects of translational kinetic energy for SiO desorption processes at higher temperature than 1000 K, reaction mechanisms for coexistence of the SiO desorption and the oxide-layers formation in the temperature region from 900 K to 1000 K are reviewed.

Actively controlled oxidation of Cu{001} with hyperthermal O molecular beam

Okada, Michio*; Moritani, Kosuke; Goto, Seishiro*; Kasai, Toshio*; Yoshigoe, Akitaka; Teraoka, Yuden

Journal of Chemical Physics, 119(14), p.6994 - 6997, 2003/10

https://doi.org/10.1063/1.1615961

The oxidation of Cu(001) with hyperthermal O molecular beams was investigated using X-ray photoemission spectroscopy in conjunction with a synchrotron light source. The efficiency of oxidation is higher than that with ambient thermal O. Further oxidation under oxygen coverage larger than 0.5 ML occurs rather inefficiently even for the 2.3 eV beam irradiation. We found such slow oxidation of Cu corresponding to the initial stage of the CuO formation can be interpreted in terms of a collision-induced-adsorption mechanism. The kinetics of the dissociative adsorption is well described using the first order kinetics in a simple Langmuir-type adsorption model.

In-situ photoemission spectroscopy for chemical reaction dynamics study of Si(001) oxidation by using high-energy-resolution synchrotron radiation

Teraoka, Yuden; Yoshigoe, Akitaka

Oyo Butsuri, 71(2), p.1523 - 1527, 2002/12

http://joi.jlc.jst.go.jp/JST.Journalarchive/oubutsu1932/71.1523

The translational kinetic energy of incident molecules is an important parameter for the study of surface chemical reaction mechanisms. New adsorption reactions, induced by the O translational kinetic energy of several eV, have been found in the O/Si(001) system by applying the surface photoemission spectroscopy with supersonic molecular beam techniques and the high-energy-resolution synchrotron radiation. The termination of dangling bonds affected dominantly the oxidation of dimer backbonds. By controlling the translational kinetic energy of incident O molecules, the formation of oxide-layers with a sub-nanometer scale is possible at room temperature.

Photoemission spectroscopic study on influence of O translational kinetic energy for Si(001) initial oxidation

Teraoka, Yuden; Yoshigoe, Akitaka

Surface Science, 507-510(1-3), p.797 - 802, 2002/06

no abstracts in English

O reaction dynamics with Si(001) surfaces as observed by synchrotron radiation photoemission spectroscopy

Teraoka, Yuden; Yoshigoe, Akitaka

Atomic Collision Research in Japan, No.28, p.97 - 99, 2002/00

The translational kinetic energy of incident molecules is an important factor for the induction of surface reactions. We applied supersonic seed molecular beam techniques and high-energy-resolution photoemission spectroscopy using synchrotron radiation to the Si initial oxidation analysis. We have already found out that the saturated oxygen coverage on HO-chemisorbed Si(001) surfaces depends on the O incident energy. Two potential energy barriers were confirmed in accordance with the first-principles calculation. An action of the incident energy should be confirmed also on clean Si(001) surfaces. Therefore, the incident energy dependence of the O dissociative chemisorption on the clean Si(001) surface has been investigated by photoemission spectroscopy for Si-2p and O-1s core levels to make clear how the incident energy affects the ultra-thin oxide-layers formation.