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Journal Articles

High spatial resolution ZnO scintillator for an in situ imaging device in EUV region

Arita, Ren*; Nakazato, Tomoharu*; Shimizu, Toshihiko*; Yamanoi, Kohei*; Empizo, M.*; Hori, Tatsuhiro*; Fukuda, Kazuhito*; Minami, Yuki*; Sarukura, Nobuhiko*; Maruyama, Momoko; et al.

Optical Materials, 36(12), p.2012 - 2015, 2014/10

 Times Cited Count:7 Percentile:38.97(Materials Science, Multidisciplinary)

A single shot image of a ZnO crystal excited by the EUV laser of Kansai Photon Science Institute was captured. The evaluated EUV beam waist radii from the ZnO emission pattern along the horizontal and vertical axes are 5.0 and 4.7$$mu$$m, respectively. The expected focal spot size of EUV laser and the spatial resolution of the magnifier (including the Schwarzschild objectives and lenses) are however 1 and 4$$mu$$m, respectively. The discrepancy on the spatial resolutions is attributed to exciton diffusion. We estimated the ZnO exciton diffusion length from the effective decay time which is shortened by exciton-exciton collision quenching and which is dependence on excitation energy density. Our results indicate that the short lifetime of ZnO is required to improve the spatial resolution.

Journal Articles

Hydrogen at zinc vacancy of ZnO; An EPR and ESEEM study

Son, N. T.*; Isoya, Junichi*; Ivanov, I. G.*; Oshima, Takeshi; Janz$'e$n, E.*

AIP Conference Proceedings 1583, p.341 - 344, 2014/02

Journal Articles

Electrical conductivity increase of Al-doped ZnO films induced by high-energy-heavy ions

Sugai, Hiroyuki; Matsunami, Noriaki*; Fukuoka, Osamu*; Sataka, Masao; Kato, Teruo; Okayasu, Satoru; Shimura, Tetsuo*; Tazawa, Masato*

Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.291 - 294, 2006/09

 Times Cited Count:15 Percentile:73.49(Instruments & Instrumentation)

We have investigated the effects on electrical properties of Al-doped ZnO (AZO) semiconductor films induced by high-energy heavy ion. The AZO films with c-axis on SiO$$_{2}$$ glass substrate were prepared by a RF-sputter-deposition method at 400 $$^{circ}$$C. Rutherford backscattering spectroscopy shows that the Al/Zn composition and the film thickness are 4 % and 0.3 $$mu$$m. We find that the conductivity monotonically increases from 1.5$$times$$10$$^{2}$$ to 8$$times$$10$$^{2}$$ S/cm with increasing the fluence up to 4$$times$$10$$^{13}$$/cm$$^{2}$$, as already been observed for 100 keV Ne irradiation. The fluence of 100 keV Ne at which the conductivity takes its maximum is 3$$times$$10$$^{16}$$/cm$$^{2}$$ (7 dpa). The dpa of 100 MeV Xe at 4$$times$$10$$^{13}$$/cm$$^{2}$$ is estimated as 0.008. Hence, the conductivity increase by 100 MeV Xe ion is ascribed to the electronic excitation effects.

Journal Articles

Irradiation effects with 100 MeV Xe ions on optical properties of Al-doped ZnO films

Fukuoka, Osamu*; Matsunami, Noriaki*; Tazawa, Masato*; Shimura, Tetsuo*; Sataka, Masao; Sugai, Hiroyuki; Okayasu, Satoru

Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.295 - 299, 2006/09

 Times Cited Count:24 Percentile:85.28(Instruments & Instrumentation)

We have investigated the effects on electrical and optical properties of Al-doped ZnO (AZO) semiconductor films induced by high-energy heavy ion. The AZO films with c-axis on SiO$$_{2}$$ glass substrate were prepared by a RF-sputter-deposition method at 400 $$^{circ}$$C. Rutherford backscattering spectroscopy shows that the Al/Zn composition and the film thickness are 4 % and 0.3 $$mu$$m. No appreciable change was observed in optical transparency. We find that the conductivity monotonically increases from 1.5$$times$$10$$^{2}$$ to 8$$times$$10$$^{2}$$ S/cm with increasing the fluence up to 4$$times$$10$$^{13}$$/cm$$^{2}$$, as already been observed for 100 keV Ne irradiation. The fluence of 100 keV Ne at which the conductivity takes its maximum is 3$$times$$10$$^{16}$$/cm$$^{2}$$ (7 dpa). The dpa of 100 MeV Xe at 4$$times$$10$$^{13}$$/cm$$^{2}$$ is estimated as 0.008. Hence, the conductivity increase by 100 MeV Xe ion is ascribed to the electronic excitation effects.

Journal Articles

Growth of ZnO nanorods on Cu implanted substrates

Takeyama, Akinori; Yamamoto, Shunya; Yoshikawa, Masahito; Ito, Hiroshi

Japanese Journal of Applied Physics, Part 1, 44(1B), p.750 - 753, 2005/01

 Times Cited Count:0 Percentile:0(Physics, Applied)

Pyramid shaped Cu precipitates were formed on Si (100) surface as a result of 200 keV Cu ion implantation and subsequent annealing. Then, ZnO nanorods were successfully synthesized on the Cu implanted substrates by chemical vapor transport (CVT). Hexagonal shaped nanorods with a diameter of 200 nm were grown nearly perpendicular to the Cu implanted substrate and their average density was increased as increasing that of Cu precipitates. The facts strongly indicate the Cu precipitates served as the catalytic particles for the growth of ZnO rods.

Journal Articles

Evaluation of ZnS-family phosphors for neutron detectors using photon counting method

Kubota, Naoyoshi*; Katagiri, Masaki; Kamijo, Keiichi*; Nanto, Hidehito*

Nuclear Instruments and Methods in Physics Research A, 529(1-3), p.321 - 324, 2004/08

 Times Cited Count:19 Percentile:77.18(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Ion beam modification of ZnO thin films on MgO

Matsunami, Noriaki*; Ito, Masaharu*; Takai, Yoshiaki*; Tazawa, Masato*; Sataka, Masao

Nuclear Instruments and Methods in Physics Research B, 206, p.282 - 286, 2003/05

 Times Cited Count:22 Percentile:81.33(Instruments & Instrumentation)

no abstracts in English

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