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Saito, Hiroyuki; Takagi, Shigeyuki*; Matsuo, Motoaki*; Iijima, Yuki*; Endo, Naruki*; Aoki, Katsutoshi*; Orimo, Shinichi*
APL Materials (Internet), 2(7), p.076103_1 - 076103_7, 2014/07
Times Cited Count:25 Percentile:67.98(Nanoscience & Nanotechnology)Takahashi, Masamitsu; Yoneda, Yasuhiro; Mizuki, Junichiro
Applied Surface Science, 237(1-4), p.219 - 223, 2004/10
Times Cited Count:5 Percentile:28.90(Chemistry, Physical)The GaAs(001)- reconstructed surface was investigated by in situ surface X-ray diffraction. The sample was subjected to measurements under molecular-beam epitaxy conditions without being transferred another chamber. Several X-ray diffraction patterns were measured with increasing the substrate temperature within the
-phase of GaAs(001)-
in a constant As flux of 5
10
Torr. At relatively low temperatures up to 545
C, the observed X-ray diffraction patterns agree well to the
2(2
4) surface. However, a different X-ray diffraction pattern was obtained at 585
C, while the
periodicity still persited. This change is explained by partial As-dimer desorption which results in a mixture of the
2(2
4) and
2(2
4) structures.
Saito, Hiroyuki; Utsumi, Wataru; Kaneko, Hiroshi*; Aoki, Katsutoshi
Japanese Journal of Applied Physics, Part 2, 43(7B), p.L981 - L983, 2004/07
Times Cited Count:5 Percentile:23.53(Physics, Applied)Bulk specimens of AlGa
N alloys covering a composition range of 0
1 were synthesized by a solid-phase reaction under high pressure.
X-ray diffraction profiles were measured to observe the alloying process, which began at around 800
C under 6.0 GPa. SEM observation and X-ray analysis of the recovered specimen indicated a uniform distribution of Al and Ga and continuous variations of the lattice constants against the composition, which implies that a solid solution of AlN and GaN is formed regardless of atomic composition.