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Journal Articles

Corrigendum to "Real time observation of oxygen chemisorption states on Si(001)-2$$times$$1 during supersonic oxygen molecular beam irradiation"

Teraoka, Yuden; Yoshigoe, Akitaka

Applied Surface Science, 346, P. 580, 2015/08

 Times Cited Count:0 Percentile:1.75(Chemistry, Physical)

Journal Articles

Corrigendum to "Si 2p and O 1s photoemission from oxidized Si(001) surfaces depending on translational kinetic energy of incident O$$_{2}$$ molecules"

Teraoka, Yuden; Yoshigoe, Akitaka

Applied Surface Science, 343, P. 212, 2015/07

 Times Cited Count:0 Percentile:1.75(Chemistry, Physical)

Journal Articles

Corrigendum to "Coexistence of passive and active oxidation for O$$_{2}$$/Si(001) system observed by SiO mass spectrometry and synchrotron radiation photoemission spectroscopy"

Teraoka, Yuden; Moritani, Kosuke*; Yoshigoe, Akitaka

Applied Surface Science, 343, P. 213, 2015/07

 Times Cited Count:0 Percentile:1.75(Chemistry, Physical)

Journal Articles

Corrigendum to "Commissioning of surface chemistry end-station in BL23SU of SPring-8"

Teraoka, Yuden; Yoshigoe, Akitaka

Applied Surface Science, 339, P. 158, 2015/06

Journal Articles

Erratum; Precise control of Si(001) initial oxidation by translational kinetic energy of O$$_{2}$$ molecules

Teraoka, Yuden; Yoshigoe, Akitaka

Japanese Journal of Applied Physics, 54(3), P. 039204_1, 2015/03

 Times Cited Count:3 Percentile:87.41(Physics, Applied)

Journal Articles

Erratum; Oxidation of aqueous HF-treated Si(001) surface induced by translational kinetic energy of O$$_{2}$$ at room temperature

Yoshigoe, Akitaka; Teraoka, Yuden

Japanese Journal of Applied Physics, 54(3), P. 039201_1, 2015/03

 Times Cited Count:0 Percentile:0.19(Physics, Applied)

Journal Articles

Erratum; SiO mass spectrometry and Si-2p photoemission spectroscopy for the study of oxidation reaction dynamics of Si(001) surface by supersonic O$$_{2}$$ molecular beams under 1000 K

Teraoka, Yuden; Yoshigoe, Akitaka; Moritani, Kosuke*

Japanese Journal of Applied Physics, 54(3), P. 039202_1, 2015/03

 Times Cited Count:0 Percentile:0.19(Physics, Applied)

Journal Articles

Erratum; Initial oxidation of Si(001) induced by translational kinetic energy of O$$_{2}$$ supersonic molecular beams

Yoshigoe, Akitaka; Sano, Mutsumi*; Teraoka, Yuden

Japanese Journal of Applied Physics, 54(3), P. 039203_1, 2015/03

 Times Cited Count:0 Percentile:0.19(Physics, Applied)

Journal Articles

Synchrotron radiation photoemission spectroscopy for chemical bonding of N atoms in oxynitride films formed at SiO$$_{2}$$/Si(001) by N$$^{+}$$ beam irradiation

Hachiue, Shunsuke; Teraoka, Yuden

Shinku, 48(5), p.343 - 345, 2005/05

Silicon oxynitride layers were formed by irradiation of nitrogen ion beams at silicon substrates with ultrathin oxide layers. The nitrogen beam was mass-selected N$$^{+}$$ ion beam. The translational kinetic energy was about 3 keV. The dose was 6.3$$times$$10$$^{14}$$ ions/cm$$^{2}$$. This value is almost equal to the atom density at the Si(001) surface. Chemical bonding states of irradiated nitrogen atoms were analyzed by photoemission spectroscopy with synchrotron radiation. Although the nitrogen dose was a low density, N-1s photoemission spectra could be deconvoluted into four peaks. The chemical bonding state of each peak was assigned with a reference of a oxide layer thickness dependence of the N-1s photoemission peak profile.

Journal Articles

Analysis of surface chemical reaction dynamics by using high brilliance and high energy-resolution synchrotron radiation

Teraoka, Yuden

Denki Gakkai Gijutsu Hokoku, (970), p.10 - 15, 2004/07

Si(001) surfaces are oxidized by O$$_{2}$$ molecules. The reaction schemes (oxide-layers formation, SiO desorption, their coexistence) are changed depending on the surface temperature and the gas pressure. The translational kinetic energy of incident O$$_{2}$$ molecules is recognizing to be an important parameter for controlling surface chemical reactions. The issues concerning translational kinetic energy induced oxidation by O$$_{2}$$ molecules at room temperature, effects of translational kinetic energy for SiO desorption processes at higher temperature than 1000 K, reaction mechanisms for coexistence of the SiO desorption and the oxide-layers formation in the temperature region from 900 K to 1000 K are reviewed.

Journal Articles

Chemical reaction dynamics in oxidation processes of Si(001) surface at high temperature

Teraoka, Yuden; Yoshigoe, Akitaka; Moritani, Kosuke

Shinku, 47(4), p.301 - 307, 2004/04

Recent research results on translational kinetic energy effects of incident oxygen molecules for Si(001) oxidation are summalized and introduced. The variation of surface temperature dependence of SiO desorption yield, oxygen uptake curves, and chemical bonding states depending on translational kinetic energy of oxygen molecules is described concretely. Eapecially, the translational kinetic energy effects on chemical reaction processes of concurrent oxide-layers formation and SiO desorption are discussed.

Journal Articles

Actively controlled oxidation of Cu{001} with hyperthermal O$$_{2}$$ molecular beam

Okada, Michio*; Moritani, Kosuke; Goto, Seishiro*; Kasai, Toshio*; Yoshigoe, Akitaka; Teraoka, Yuden

Journal of Chemical Physics, 119(14), p.6994 - 6997, 2003/10

 Times Cited Count:41 Percentile:79.17(Chemistry, Physical)

The oxidation of Cu(001) with hyperthermal O$$_{2}$$ molecular beams was investigated using X-ray photoemission spectroscopy in conjunction with a synchrotron light source. The efficiency of oxidation is higher than that with ambient thermal O$$_{2}$$. Further oxidation under oxygen coverage larger than 0.5 ML occurs rather inefficiently even for the 2.3 eV beam irradiation. We found such slow oxidation of Cu corresponding to the initial stage of the Cu$$_{2}$$O formation can be interpreted in terms of a collision-induced-adsorption mechanism. The kinetics of the dissociative adsorption is well described using the first order kinetics in a simple Langmuir-type adsorption model.

Journal Articles

Oxidation of aqueous HF-treated Si(001) surface induced by translational kinetic energy of O$$_{2}$$ at room temperature

Yoshigoe, Akitaka; Teraoka, Yuden

Japanese Journal of Applied Physics, Part 1, 42(9A), p.5749 - 5750, 2003/09

 Times Cited Count:2 Percentile:11.17(Physics, Applied)

We investigated oxidation reactions induced by the translational kinetic energy of O$$_{2}$$ on an Si(001) surface treated with aqueous hydrofluoric acid (HF) solution by combining synchrotron radiation photoemission spectroscopy with supersonic molecular beam techniques. The oxidation reactions at room temperature did not progress following up to approximately 3600 L exposure of O$$_{2}$$ with incident energy of 0.04 eV. On the other hand, the oxidation states up to the Si$$^{4+}$$ species including the Si$$^{1+}$$, Si$$^{2+}$$ and Si$$^{3+}$$ species were formed when the incident energy was 3.0 eV. The thickness of oxidized layers was estimated to be 0.26 nm at the final oxidation stages. Thus, we concluded that the Si atoms at the top layers were oxidized by the translational kinetic energy of 3.0 eV.

Journal Articles

In-situ photoemission spectroscopy for chemical reaction dynamics study of Si(001) oxidation by using high-energy-resolution synchrotron radiation

Teraoka, Yuden; Yoshigoe, Akitaka

Oyo Butsuri, 71(2), p.1523 - 1527, 2002/12

The translational kinetic energy of incident molecules is an important parameter for the study of surface chemical reaction mechanisms. New adsorption reactions, induced by the O$$_{2}$$ translational kinetic energy of several eV, have been found in the O$$_{2}$$/Si(001) system by applying the surface photoemission spectroscopy with supersonic molecular beam techniques and the high-energy-resolution synchrotron radiation. The termination of dangling bonds affected dominantly the oxidation of dimer backbonds. By controlling the translational kinetic energy of incident O$$_{2}$$ molecules, the formation of oxide-layers with a sub-nanometer scale is possible at room temperature.

Journal Articles

Precise control of Si(001) initial oxidation by translational kinetic energy of O$$_{2}$$ molecules

Teraoka, Yuden; Yoshigoe, Akitaka

Japanese Journal of Applied Physics, Part 1, 41(6B), p.4253 - 4260, 2002/06

 Times Cited Count:36 Percentile:77.58(Physics, Applied)

no abstracts in English

Journal Articles

Photoemission spectroscopic study on influence of O$$_{2}$$ translational kinetic energy for Si(001) initial oxidation

Teraoka, Yuden; Yoshigoe, Akitaka

Surface Science, 507-510(1-3), p.797 - 802, 2002/06

no abstracts in English

Journal Articles

Translational-kinetic-energy-induced surface reactions; Manifestation of their potential energy barriers in O$$_{2}$$/Si(001) system

Teraoka, Yuden; Yoshigoe, Akitaka

OMICRON Nanotechnology Newsletter, 6(1), p.4 - 6, 2002/04

no abstracts in English

Journal Articles

O$$_{2}$$ reaction dynamics with Si(001) surfaces as observed by synchrotron radiation photoemission spectroscopy

Teraoka, Yuden; Yoshigoe, Akitaka

Atomic Collision Research in Japan, No.28, p.97 - 99, 2002/00

The translational kinetic energy of incident molecules is an important factor for the induction of surface reactions. We applied supersonic seed molecular beam techniques and high-energy-resolution photoemission spectroscopy using synchrotron radiation to the Si initial oxidation analysis. We have already found out that the saturated oxygen coverage on H$${_2}$$O-chemisorbed Si(001) surfaces depends on the O$${_2}$$ incident energy. Two potential energy barriers were confirmed in accordance with the first-principles calculation. An action of the incident energy should be confirmed also on clean Si(001) surfaces. Therefore, the incident energy dependence of the O$${_2}$$ dissociative chemisorption on the clean Si(001) surface has been investigated by photoemission spectroscopy for Si-2p and O-1s core levels to make clear how the incident energy affects the ultra-thin oxide-layers formation.

Journal Articles

${it In situ}$ analysis using high resolution synchrotron radiation photoemission spectroscopy for initial oxidation of H$$_{2}$$O pre-adsorbed Si(001) surfaces induced by supersonic O$$_{2}$$ molecular beams at room temperature

Yoshigoe, Akitaka; Teraoka, Yuden

Atomic Collision Research in Japan, No.28, p.105 - 107, 2002/00

The oxidation states up to Si$$^{4+}$$ states were formed when the translational kinetic energy of O$$_{2}$$ was 3.0 eV. The time evolustions of each Si oxidation states were in situ measured by using the high resolution photoemission spectroscopy.The translational kinetic energy of 3.0eV randomly enhanced the oxidation on Si(001) surface up to the second layer Si backbonds. It was found that the Si$$^{4+}$$ was not observed, thus the dimer Si atoms at the top layer was not surrounded by four oxygen atoms at the initial oxidation stage.

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