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Huang, Z.*; Wang, W.*; Ye, H.*; Bao, S.*; Shangguan, Y.*; Liao, J.*; Cao, S.*; Kajimoto, Ryoichi; Ikeuchi, Kazuhiko*; Deng, G.*; et al.
Physical Review B, 109(1), p.014434_1 - 014434_9, 2024/01
Times Cited Count:0Bao, S.*; Gu, Z.-L.*; Shangguan, Y.*; Huang, Z.*; Liao, J.*; Zhao, X.*; Zhang, B.*; Dong, Z.-Y.*; Wang, W.*; Kajimoto, Ryoichi; et al.
Nature Communications (Internet), 14, p.6093_1 - 6093_9, 2023/09
Times Cited Count:1 Percentile:61.99(Multidisciplinary Sciences)Sakakibara, Ryotaro*; Bao, J.*; Yuhara, Keisuke*; Matsuda, Keita*; Terasawa, Tomoo; Kusunoki, Michiko*; Norimatsu, Wataru*
Applied Physics Letters, 123(3), p.031603_1 - 031603_4, 2023/07
Times Cited Count:1 Percentile:54.89(Physics, Applied)We here report a step unbunching phenomenon, which is the inverse of the phenomenon of step bunching. When a 4H-SiC (0001) surface is annealed at a high temperature, step bunching arises due to the different velocities of the step motion in adjacent steps, resulting in steps with a height of more than several nanometers. We found that the bunched steps, thus, obtained by hydrogen etching in an Ar/H atmosphere were "unbunched" into lower height steps when annealed subsequently at lower temperatures. This unbunching phenomenon can be well explained by the consequence of the competition between energetics and kinetics. Our findings provide another approach for the surface smoothing of SiC by hydrogen etching and may give significant insight into the application of SiC power devices and two-dimensional materials growth techniques in general.
Bao, S.*; Wang, W.*; Shangguan, Y.*; Cai, Z.*; Dong, Z.-Y.*; Huang, Z.*; Si, W.*; Ma, Z.*; Kajimoto, Ryoichi; Ikeuchi, Kazuhiko*; et al.
Physical Review X, 12(1), p.011022_1 - 011022_15, 2022/02
Times Cited Count:11 Percentile:78.27(Physics, Multidisciplinary)Shangguan, Y.*; Bao, S.*; Dong, Z.-Y.*; Cai, Z.*; Wang, W.*; Huang, Z.*; Ma, Z.*; Liao, J.*; Zhao, X.*; Kajimoto, Ryoichi; et al.
Physical Review B, 104(22), p.224430_1 - 224430_8, 2021/12
Times Cited Count:1 Percentile:7.92(Materials Science, Multidisciplinary)Sumi, Tatsuya*; Nagai, Kazuki*; Bao, J.*; Terasawa, Tomoo; Norimatsu, Wataru*; Kusunoki, Michiko*; Wakabayashi, Yusuke*
Applied Physics Letters, 117(14), p.143102_1 - 143102_5, 2020/10
Times Cited Count:4 Percentile:26.53(Physics, Applied)A systematic structural study of epitaxial graphene samples on the SiC (0001) surface has been performed by the surface X-ray diffraction method, which is a non-contact technique. For samples with only a buffer layer, one layer graphene, and multilayer graphene, the distances between the buffer layer and the surface Si atoms were found to be 0.23 nm. This value is the same as reported values. For quasi-free-standing graphene samples prepared by the rapid cooling method, there was no buffer layer and the distance between the quasi-free-standing graphene and the surface Si atoms was 0.35 nm, which is significantly shorter than the value in hydrogen-intercalated graphene and slightly longer than the interplane distance in graphite. The Si occupancy deviated from unity within 1 nm of the SiC surface. The depth profile of the Si occupancy showed little sample dependence, and it was reproduced by a simple atomistic model based on random hopping of Si atoms.
Bao, S.*; Cai, Z.*; Si, W.*; Wang, W.*; Wang, X.*; Shangguan, Y.*; Ma, Z.*; Dong, Z.-Y.*; Kajimoto, Ryoichi; Ikeuchi, Kazuhiko*; et al.
Physical Review B, 101(21), p.214419_1 - 214419_8, 2020/06
Times Cited Count:17 Percentile:74.78(Materials Science, Multidisciplinary)Cai, Z.*; Bao, S.*; Wang, W.*; Ma, Z.*; Dong, Z.-Y.*; Shangguan, Y.*; Wang, J.*; Ran, K.*; Li, S.*; Kamazawa, Kazuya*; et al.
Physical Review B, 101(13), p.134408_1 - 134408_10, 2020/04
Times Cited Count:6 Percentile:38.95(Materials Science, Multidisciplinary)Dirac matters provide a platform for exploring the interplay of their carriers with other quantum phenomena. SrMnSb has been proposed to be a magnetic Weyl semimetal and provides an excellent platform to study the coupling between Weyl fermions and magnons. We performed inelastic neutron scattering measurements on single crystals of SrMnSb, and found The dispersion in the magnetic Mn layer extends up to about 76 meV, while that between the layers has a narrow band width of 6 meV. Despite the coexistence of Weyl fermions and magnons, we find no clear evidence that the magnetic dynamics are influenced by the Weyl fermions in SrMnSb, possibly because that the Weyl fermions and magnons reside in the Sb and Mn layers separately, and the interlayer coupling is weak due to the quasi-two-dimensional nature of the material.
Saito, Yuika*; Tokiwa, Kenshiro*; Kondo, Takahiro*; Bao, J.*; Terasawa, Tomoo; Norimatsu, Wataru*; Kusunoki, Michiko*
AIP Advances (Internet), 9(6), p.065314_1 - 065314_6, 2019/06
Times Cited Count:4 Percentile:16.07(Nanoscience & Nanotechnology)Wang, J.*; Ran, K.*; Li, S.*; Ma, Z.*; Bao, S.*; Cai, Z.*; Zhang, Y.*; Nakajima, Kenji; Kawamura, Seiko; ermk, P.*; et al.
Nature Communications (Internet), 10, p.2802_1 - 2802_6, 2019/06
Times Cited Count:21 Percentile:80.49(Multidisciplinary Sciences)Travnikova, O.*; Colin, D.*; Bao, Z.*; Brve, K. J.*; Tanaka, Takahiro*; Hoshino, Masamitsu*; Kato, Hideki*; Tanaka, Hiroshi*; Harries, J.; Tamenori, Yusuke*; et al.
Journal of Electron Spectroscopy and Related Phenomena, 181(2-3), p.129 - 134, 2010/08
Times Cited Count:1 Percentile:7.38(Spectroscopy)In NO a detailed study of the vibrational distribution of the state reached after decay of core-to- excitation of N terminal, N central and O 1s core levels is reported. We observe a change in the relative intensity of bending versus stretching modes while scanning the photon energy across all three resonances. While this effect is known to be due to the Renner-Teller splitting in the core-excited states, we could derive that the antisymmetric stretching is excited mainly in the decay of the N terminal 1s-to- excitation. An explanation for such selectivity is provided in terms of interplay of vibrational structure on potential energy surfaces of different electronic states involved in the process.