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Carlsson, P.*; Son, N. T.*; Gali, A.*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Magnusson, B.*; Janzn, E.*
Physical Review B, 82(23), p.235203_1 - 235203_11, 2010/12
Times Cited Count:11 Percentile:46.11(Materials Science, Multidisciplinary)Electron Paramagnetic Resonance (EPR) studies of the EI4 center in 4- and 6-Silicon Carbide (SiC) were carried out. The EI4 center was drastically enhanced in electron-irradiated high-purity semi-insulating materials by annealing at 700-750 C. An additional large-splitting Si hf structure and C hf lines of the EI4 defect were observed. Comparing the data obtained from the hf interactions and the annealing behavior, and also from supercell calculations of different carbon-vacancy-related complexes, we propose a complex between a carbon vacancy-carbon antisite and a carbon vacancy at the third-neighbor site of the antisite in the neutral charge state, (V-CV), as a new defect model for the EI4 center.
Son, N. T.*; Carlsson, P.*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Magnusson, B.*; Janzn, E.*
Materials Science Forum, 645-648, p.399 - 402, 2010/00
Defects in high-purity semi-insulating 4H SiC irradiated with 2 MeV electrons at room temperature were studied using Electron paramagnetic resonance (EPR). The EPR signal named EI4 defect increased with annealing temperature up to 750 C. Additional large-splitting Si hyperfine (hf) structures and C hf lines by the interaction with one C nucleus were investigated. Based on the observed hf structures, the C symmetry as well as the annealing behaviour, the EI4 defects is determined to be the complex between two carbon vacancies and a carbon antisite in the neutral charge state, VVC. The formation of the complex is interpreted in terms of the migration of the silicon vacancy and the formation of the carbon vacancy-carbon antisite pair next to a carbon vacancy.
Son, N. T.*; Umeda, Takahide*; Isoya, Junichi*; Gali, A.*; Bockstedte, M.*; Magnusson, B.*; Ellison, A.*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; et al.
Physica B; Condensed Matter, 376-377, p.334 - 337, 2006/04
Times Cited Count:3 Percentile:17.99(Physics, Condensed Matter)no abstracts in English
Son, N. T.*; Umeda, Takahide*; Isoya, Junichi*; Gali, A.*; Bockstedte, M.*; Magnusson, B.*; Ellison, A.*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; et al.
Materials Science Forum, 527-529, p.527 - 530, 2006/00
no abstracts in English