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Kawasuso, Atsuo; Yoshikawa, Masahito; Ito, Hisayoshi; Krause-Rehberg, R.*; Redmann, F.*; Higuchi, Takatoshi*; Betsuyaku, Kiyoshi*
Physica B; Condensed Matter, 376-377, p.350 - 353, 2006/04
Times Cited Count：13 Percentile：52.05(Physics, Condensed Matter)In this presentation, we report identification of vacancy defects in cubic and hexagonal SiC irradiated with fast electrons through electron-pisitron momentum distribution measurements and theoretical analyses. In cubic SiC isolated silicon vacancies are responsible for positron trapping. The lifetime of positrons trapped at silicon vacancies is prolonged due to the outward lattice relaxation. Because of the local tetrahedral symmetry of silicon vacancies, the observed momentum distributions are consistently explained. In the case of hexagonal SiC, one particular vacancy defects appearing after annealing of isolated silicon vacancies have dangling bonds along the c-axis. From the enhancement of positron annihilation probability with carbon 1s electrons, the above defects are attributed to carbon-vacancy-antisite-carbon complexes.
Kawasuso, Atsuo; Yoshikawa, Masahito; Ito, Hisayoshi; Chiba, Toshinobu*; Higuchi, Takatoshi*; Betsuyaku, Kiyoshi*; Redmann, F.*; Krause-Rehberg, R.*
Physical Review B, 72(4), p.045204_1 - 045204_6, 2005/07
Times Cited Count：16 Percentile：55.78(Materials Science, Multidisciplinary)Two-dimensional angular correlation of annihilation radiation (2D-ACAR) and coincidence Doppler broadening (CDB) of annihilation radiation measurements have been performed on electron-irradiated n-type 3C SiC in which isolated silicon vacancies are responsible for positron trapping. After irradiation, the intensity of CDB spectrum increased and decreased in low and high momentum regions, respectively. These fetures were explained by the theoretical calculation considering silicon vacancies. The center region of 2D-ACAR spectra became isotropic after iradiation, while the overall anisotropies extending within the Jones zone were conserved suggesting that isolated silicon vacancies have the tetrahedral symmetry as expected from the previous electron spin resonance study.
Kawasuso, Atsuo; Weidener, M.*; Redmann, F.*; Frank, T.*; Sperr, P.*; K
gel, G.*; Yoshikawa, Masahito; Ito, Hisayoshi; Krause-Rehberg, R.*; Triftsh
user, W.*; et al.
Silicon Carbide, p.563 - 584, 2004/00
no abstracts in English
Kawasuso, Atsuo; Yoshikawa, Masahito; Maekawa, Masaki; Ito, Hisayoshi; Chiba, Toshinobu*; Redmann, F.*; Rehberg, R. K.*; Weidner, M.*; Frank, T.*; Pensl, G.*
Materials Science Forum, 433-436, p.477 - 480, 2003/08
no abstracts in English
Kawasuso, Atsuo; Weidner, M.*; Redmann, F.*; Frank, T.*; Krause-Rehberg, R.*; Pensl, G.*; Sperr, P.*; Triftshuser, W.*; Ito, Hisayoshi
Materials Science Forum, 389-393, p.489 - 492, 2002/05
no abstracts in English
levels in electron-irradiated 4H-SiC studied by positron annihilation and deep-level transient spectroscopyKawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Weidner, M.*; Frank, T.*; Pensl, G.*; Sperr, P.*; Triftshuser, W.*; Ito, Hisayoshi
Applied Physics Letters, 79(24), p.3950 - 3952, 2001/12
Times Cited Count：39 Percentile：79.52(Physics, Applied)no abstracts in English
Redmann, F.*; Kawasuso, Atsuo; Petters, K.*; Ito, Hisayoshi; Krause-Rehberg, R.*
Physica B; Condensed Matter, 308-310, p.629 - 632, 2001/12
Times Cited Count：3 Percentile：22.29(Physics, Condensed Matter)no abstracts in English
Kawasuso, Atsuo; Weidner, M.*; Redmann, F.*; Frank, T.*; Sperr, P.*; Krause-Rehberg, R.*; Triftshuser, W.*; Pensl, G.*
Physica B; Condensed Matter, 308-310, p.660 - 663, 2001/12
Times Cited Count：13 Percentile：57.97(Physics, Condensed Matter)no abstracts in English
SiC epilayers studied by positron annihilation and deep level transient spectroscopyKawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Frank, T.*; Weidner, M.*; Pensl, G.*; Sperr, P.*; Ito, Hisayoshi
Journal of Applied Physics, 90(7), p.3377 - 3382, 2001/10
Times Cited Count：42 Percentile：81.14(Physics, Applied)no abstracts in English
Redmann, F.*; Kawasuso, Atsuo; Petters, K.*; Krause-Rehberg, R.*; Ito, Hisayoshi
Materials Science Forum, 363-365, p.126 - 128, 2001/05
no abstracts in English
Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Yoshikawa, Masahito; Kojima, Kazutoshi; Ito, Hisayoshi
Physica Status Solidi (B), 223(2), p.R8 - R10, 2001/01
no abstracts in English
Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Sperr, P.*; Frank, T.*; Weidner, M.*; Pensl, G.*; Ito, Hisayoshi
Materials Science Forum, 353-356, p.537 - 540, 2001/00
no abstracts in English
