Recoil--fission and recoil---fission events observed in the reaction Ca + Am

Forsberg, U.*; Rudolph, D.*; Andersson, L.-L.*; Di Nitto, A.*; Dllmann, Ch. E.*; Fahlander, C.*; Gates, J. M.*; Golubev, P.*; Gregorich, K. E.*; Gross, C. J.*; et al.

Nuclear Physics A, 953, p.117 - 138, 2016/09

https://doi.org/10.1016/j.nuclphysa.2016.04.025

Alpha-decay chains observed in the element-115 production reactions of Ca + Am were investigated using a new data set consisting of our recently reported data obtained at GSI and previously reported ones at Dubna and LBNL. Short decay chains of recoil--()-fission type, fourteen of which were observed, and some of which were interpreted as the 2-neutron evaporation products Mc, have been reassigned. It is plausible that most of them were assigned to the 3-neutron evaporation products Mc whose decay chain would on the way have branches of EC decays followed by fission.

Spectroscopic tools applied to element Z = 115 decay chains

Forsberg, U.*; Rudolph, D.*; Golubev, P.*; Sarmiento, L. G.*; Yakushev, A.*; Andersson, L.-L.*; Di Nitto, A.*; Dllmann, Ch. E.*; Gates, J. M.*; Gregorich, K. E.*; et al.

EPJ Web of Conferences, 66, p.02036_1 - 02036_4, 2014/03

https://doi.org/10.1051/epjconf/20146602036

A focal-plane Si detector setup applied to the spectroscopy of the element 115 -decay chains was reported. Results of the digital signal analysis for preamplifier signals and of the event-by-event -energy loss correction analysis were presented. The detectors consist of five double-sided Si strip detectors (DSSSD) arranged as a box, and signals from one side of the detector at the bottom of the box were digitally processed. Energy losses of particles detected by two Si detectors at the bottom and a side differs event-by-event, because each particle passed through two dead layers with a certain tilted angle. By correcting for the energy loss of each event using the angle of the -particle emission extracted from the detected positions, we succeeded in improving the energy resolution significantly.

Spectroscopy of element 115 decay chains

Rudolph, D.*; Forsberg, U.*; Golubev, P.*; Sarmiento, L. G.*; Yakushev, A.*; Andersson, L. L.*; Di Nitto, A.*; Dllmann, Ch. E.*; Gates, J. M.*; Gregorich, K. E.*; et al.

Physical Review Letters, 111(11), p.112502_1 - 112502_5, 2013/09

https://doi.org/10.1103/PhysRevLett.111.112502

X-ray imaging by using ZnO crystal

Sarukura, Nobuhiko*; Nakazato, Tomoharu*; Shimizu, Toshihiko*; Yamanoi, Kohei*; Sakai, Kohei*; Ehrentraut, D.*; Fukuda, Tsuguo*; Tanaka, Momoko; Nishikino, Masaharu; Kawachi, Tetsuya

Reza Kenkyu, 39(3), p.193 - 196, 2011/03

http://ci.nii.ac.jp/naid/10027782114

Development of light sources in the soft X-ray/X-ray region, such as laser induced plasma emission and XFEL, is in demand for applications in various fields of science, medicine, and industry, among others. To promote this endeavor, development of imaging devices as diagnostic tools in this wavelength region is required. ZnO is a prominent candidate material for high spatial and temporal resolution imaging devices because of its emission at 380 nm, lifetime of less than 1 ns, and availability of large and cheap but high quality crystals. We obtained a single shot image of ZnO emission pattern excited by an X-ray laser at the Advanced Photon Research Center, Japan Atomic Energy Agency. The spatial resolution was estimated to be around 10 m. This result shows that ZnO can be used as a powerful imaging device for applications such as EUV lithography.

Time-resolved fluorescence spectrum of wide-gap semiconductors excited by 13.9 nm X-ray laser

Tanaka, Momoko; Furukawa, Yusuke*; Nakazato, Tomoharu*; Tatsumi, Toshihiro*; Murakami, Hidetoshi*; Shimizu, Toshihiko*; Sarukura, Nobuhiko*; Nishikino, Masaharu; Kawachi, Tetsuya; Kagamitani, Yuji*; et al.

X-Ray Lasers 2008; Springer Proceedings in Physics, Vol.130, p.501 - 505, 2009/00

https://doi.org/10.1007/978-1-4020-9924-3_60

We measured the time-resolved fluorescence spectra of ZnO and GaN single crystals excited by an X-ray laser operating at 13.9 nm and evaluated their scintillation properties for EUV excitation as compared with UV excitation case. For ZnO, a clear fluorescence peak of excitonic origin was observed at around 380 nm and the decay lifetime of less than 3 ns is found to be almost similar to the UV excitation case. The fluorescence at 380 nm is ideal for scintillator device design in the EUV and further applications. For GaN, the lifetimes are much longer than ZnO and the temporal profile of the EUV-excited fluorescence differs with the UV excitation case. As such, the EUV scintillation properties of ZnO is said to be more favorable than GaN. Finally, it is also demonstrated that an X-ray laser is an excellent tool for spectroscopic characterization of materials intended for next-generation lithography applications.

Evaluation of fast EUV scintillator using 13.9 nm X-ray laser

Tanaka, Momoko; Furukawa, Hiroyuki*; Murakami, Hidetoshi*; Saito, Shigeki*; Sarukura, Nobuhiko*; Nishikino, Masaharu; Yamatani, Hiroshi; Nagashima, Keisuke; Kagamitani, Yuji*; Ehrentraut, D.*; et al.

Journal of Physics; Conference Series, 112(4), p.042058_1 - 042058_4, 2008/00

https://doi.org/10.1088/1742-6596/112/4/042058

Optical technologies in the extreme ultraviolet (EUV) region have been receiving strong interest for the next generation lithography. Efficient and fast scintillators are one of the key devices functioning in the EUV region. In this paper, we report excellent properties of ZnO and GaN as scintillators in the EUV region, and to demonstrate the feasibility of using a Ni-like Ag EUV laser operated at 13.9-nm to evaluate these properties. The sample was irradiated with EUV laser pulses, and the fluorescence spectrum and the fluorescence lifetime were measured using a streak camera fitted with a spectrograph. In the case of ZnO, a clear, excitonic, fluorescence peak was observed at around 380 nm with a decay lifetime of 3 ns. For GaN, a fluorescence peak at 370 nm having slower 5-ns decay time was observed. In this respect, the EUV scintillation properties of ZnO is said to be more favorable than GaN.

Single-shot focal spot image of EUV laser using a ZnO scintillator

Nakazato, Tomoharu*; Shimizu, Toshihiko*; Yamanoi, Kohei*; Takatori, Satoru*; Estacio, E.*; Cadatal, M.*; Sarukura, Nobuhiko*; Nishimura, Hiroaki*; Mima, Kunioki*; Tanaka, Momoko; et al.

no journal, , 

We have observed the single shot, focused image of a EUV laser through the emission of a ZnO scintillator. An estimated EUV laser focal spot size of 5088 micrometer is reasonable considering the long focal length of the spherical mirror. This work reports a feasible method to perform single-shot beam diagnostics for EUV laser sources using a ZnO crystal scintillator. Furthermore, since the ZnO fluorescence is at 380 nm wavelength, the imaging optics for the diagnostics can all be placed outside the vacuum chamber; thereby making experiments less cumbersome. Having a capability in fast and efficient beam profiling of EUV laser sources with acceptable resolving power is very important in future lithography applications.