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-FeSi
prepared by ion beam sputter deposition (IBSD) methodZhuravlev, A. V.; Yamamoto, Hiroyuki; Shimura, Kenichiro*; Yamaguchi, Kenji; Shamoto, Shinichi; Hojo, Kiichi; Terai, Takayuki*
Thin Solid Films, 515(22), p.8149 - 8153, 2007/08
Times Cited Count：3 Percentile：17.87(Materials Science, Multidisciplinary)A semiconducting silicide, -FeSi, formed on a Si substrate, is known to exhibit strong photoluminescence (PL) peak at around 0.8 eV when it is annealed at high temperature (1073-1173 K). On the other hand, dislocation-related band of Si has intensity maxima at 0.81 eV. In the present study, the PL spectra were taken at the various stages of IBSD in order to understand the processes that are responsible for the observed PL enhancement. We observed a strong PL peak at around 0.8 eV in IBSD-grown -FeSi film on Si substrate, as well as in substrate itself, upon thermal annealing in air at 1153 K. The most pronounced peak at 0.8 eV was observed when Si substrates were sputter etched by Ne
, prior to the thermal annealing in air. However, the temperature dependence of peak intensity of -FeSi was different from that of SE-treated Si, where thermal quenching appeared to occur at slightly lower temperature in the former.
-FeSi
thin films on -FeSi (110) substrates by molecular beam epitaxyMuroga, Masataka*; Suzuki, Hirokazu*; Udono, Haruhiko*; Kikuma, Isao*; Zhuravlev, A. V.; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Terai, Takayuki*
Thin Solid Films, 515(22), p.8197 - 8200, 2007/08
Times Cited Count：6 Percentile：31.31(Materials Science, Multidisciplinary)Semiconducting 
-FeSi has received much attention as a material for Si-based optoelectronic devices. There are a number of studies on heteroepitaxy of -FeSi film on Si. However, growth experiments of -FeSi film on single crystalline -FeSi substrate have not been investigated yet. Recently, single crystalline -FeSi with large growth facets by solution growth method using Ga solvent. By obtaining a smooth surface on the substrate, we have succeeded in growing -FeSi film on -FeSi(110) substrate using molecular-beam epitaxy.
Yamaguchi, Kenji; Zhuravlev, A.; Shimura, Kenichiro; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi
no journal, ,
no abstracts in English
-FeSiZhuravlev, A.; Yamaguchi, Kenji; Shimura, Kenichiro*; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi; Terai, Takayuki*
no journal, ,
no abstracts in English
-FeSi films on SOI substrateShimura, Kenichiro*; Zhuravlev, A. V.; Yamamoto, Hiroyuki; Yamaguchi, Kenji; Shamoto, Shinichi; Hojo, Kiichi; Terai, Takayuki*
no journal, ,
In order to improve PL characteristics of -FeSi film on SOI (silicon-on-insulator) substrate, a template method was employed to control the inter-diffusion processes at the interface of -FeSi/SOI. In contrast to the case without employing template layer, the template method employed in the present study was found to be effective to enhance PL intensity of -FeSi film formed on SOI substrate.
-FeSi fabricated by ion beam sputter deposition methodZhuravlev, A. V.; Yamamoto, Hiroyuki; Shimura, Kenichiro*; Yamaguchi, Kenji; Shamoto, Shinichi; Hojo, Kiichi; Terai, Takayuki*
no journal, ,
no abstracts in English
-FeSi grown on Si by ion beam sputter deposition methodZhuravlev, A. V.; Yamamoto, Hiroyuki; Shimura, Kenichiro*; Yamaguchi, Kenji; Shamoto, Shinichi; Hojo, Kiichi; Terai, Takayuki*
no journal, ,
Semiconducting silicide, -FeSi formed on Si, is known to exhibit photoluminescence (PL) peak at around 0.8 eV. However, substrate Si also has a luminescence peak at 0.80 eV, which nearly coincides with that of -FeSi, so that the origin of PL peak from -FeSi/Si is always a point of issue. In this study, the dependence of PL characteristics sputter etched (SE) Si and silicide on SE Si on ion beam energy applied to Si substrate was investigated. The PL intensity of the annealed -FeSi on Si substrate increased as the SE energy applied to the substrate increased. In the case of 5 keV SE in both cases the strong PL signal was observed thereby indicating the contribution of irradiation defects to the observed PL spectra, but in case of no SE and 2 keV SE the PL intensity from silicide sample are higher than PL from SE Si. It can be concluded that the SE can be employed to control the PL properties of -FeSi film on Si substrate.
-FeSi thin films and Si or silicon-on-insulator substratesSasase, Masato*; Zhuravlev, A.*; Shimura, Kenichiro*; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Shamoto, Shinichi; Terai, Takayuki*; Hojo, Kiichi
no journal, ,
The effect of the substrate/film interface structure and compositional changes at the interface has been investigated by using two different substrates (Si(100), silicon-on-insulator (SOI)) with cross sectional transmission electron microscope (TEM). The observed images show that the -FeSi on Si(100) were aggregated through the subsequent annealing, forming -FeSi particles with the size of 20
200 nm. In the SOI sample, expansion of the buried SiO layer was significantly seen from TEM images and EDS mapping through the subsequent annealing. Aggregation also occurred to form 2030 nm -FeSi particles with SOI substrate. No -FeSi/Si interface is observed since the SiO layer swelled and top surface Si layer disappeared through the annealing. On the other hand, the -FeSi/Si interface is still observed even after the subsequent annealing when Si(100) substrate was employed.
