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Goto, Kohei*; Suzuki, Hirokazu*; Udono, Haruhiko*; Kikuma, Isao*; Esaka, Fumitaka; Uchikoshi, Masahito*; Isshiki, Minoru*
Thin Solid Films, 515(22), p.8263 - 8267, 2007/08
Times Cited Count:15 Percentile:55.86(Materials Science, Multidisciplinary)We have investigated the effect of FeSi source purity on the electrical property of -FeSi grown from solution. A high purity FeSi source avoided a contamination of Cu and W metals was synthesized by melting a high purity Fe (5N) and Si (5N-up) in a quartz ampoule. The -FeSi crystals grown using the high purity FeSi and Zn solvent showed n-type conduction, whereas those grown using the arc-melted FeSi showed p-type. From the SIMS analysis of the grown crystals, we found that dominant impurity concentrations in the p-type crystals were higher than those in the n-type ones.
Goto, Kohei*; Udono, Haruhiko*; Kikuma, Isao*; Esaka, Fumitaka; Uchikoshi, Masahito*; Isshiki, Minoru*
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