Reports of electro-polishing implementation for quarter-wave resonators, 2

Nii, Keisuke*; Ida, Yoshiaki*; Ueda, Hideki*; Yamaguchi, Takanori*; Kabumoto, Hiroshi; Kamiya, Junichiro; Kondo, Yasuhiro; Tamura, Jun; Harada, Hiroyuki; Matsui, Yutaka; et al.

Proceedings of 19th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.601 - 604, 2023/01

no abstracts in English

Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

Yamada, Takahiro*; Watanabe, Kenta*; Nozaki, Mikito*; Shih, H.-A.*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA07_1 - 06KA07_6, 2018/06

https://doi.org/10.7567/JJAP.57.06KA07

Thermal oxidation of AlGaN surface and its impact on the electrical properties of AlGaN/GaN MOS capacitors were investigated by means of synchrotron radiation photoelectron spectroscopy (SR-PES), atomic force microscopy (AFM) and C-V measurements. SR-PES analysis revealed that the AlGaN surface is oxidized even at low temperature of 400C, in contrast to no oxide formation on GaN surface. However, since no noticeable change in the surface morphology was observed at temperatures up to 800C, it can be concluded that an ultrathin oxide overlayer is formed on the AlGaN surface. On the other hand, for the oxidation treatments above 850C, the formation of small oxide grains was observed over the entire area of the AlGaN surface, and the growth of oxide grains significantly degraded the surface morphology. Therefore, the AlGaN/GaN MOS capacitors were fabricated on the AlGaN surface oxidized at moderate temperatures up to 800C. While we have confirmed that relatively good interface properties are obtained for direct AlON deposition without oxidation treatment, it was found that the oxidation treatment at 400C leads to further improvement of interface properties and reduction of C-V hysteresis.

Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

Nozaki, Mikito*; Watanabe, Kenta*; Yamada, Takahiro*; Shih, H.-A.*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA02_1 - 06KA02_7, 2018/06

https://doi.org/10.7567/JJAP.57.06KA02

We fabricated AlON dielectric films by repeating thin AlN deposition and in situ O oxidation for AlGaN/GaN MOS-HFETs. Uniform nitrogen distribution is achievable by the proposed ALD-based process and that nitrogen concentration can be precisely controlled by changing AlN thickness (ALD cycle number) in each step. It was found that AlON films grown by ALD system offers significant advantages in terms of practical application while keeping superior Vth stability and electrical properties at the insulator/AlGaN interface in AlGaN/GaN MOS-HFETs.

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Yamada, Takahiro*; Ito, Joyo*; Asahara, Ryohei*; Watanabe, Kenta*; Nozaki, Mikito*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; et al.

Journal of Applied Physics, 121(3), p.035303_1 - 035303_9, 2017/01

https://doi.org/10.1063/1.4974458

Initial oxidation of GaN(0001) epilayers and subsequent growth of thermal oxides in dry oxygen ambient were investigated by means of X-ray photoelectron spectroscopy, spectroscopic ellipsometry, atomic force microscopy and X-ray diffraction measurements. It was found that, whereas initial oxide formation tends to saturate at temperatures below 800C, selective growth of small oxide grains proceeds at dislocations in the epilayers, followed by noticeable grain growth leading to rough surface morphology at higher oxidation temperatures. This indicates that oxide growth and its morphology are crucially dependent on the defect density in the GaN epilayers. Structural characterizations also revealed that polycrystalline - and -phase GaO grains in an epitaxial relation with the GaN substrate are formed from the initial stage of the oxide growth. On the basis of these experimental findings, we also developed a comprehensive model for GaN oxidation mediated by nitrogen removal and mass transport.

Local structural analysis of half-metallic ferromagnet CrO

Kodama, Katsuaki; Ikeda, Kazutaka*; Isobe, Masahiko*; Takeda, Hikaru*; Ito, Masayuki*; Ueda, Yutaka*; Shamoto, Shinichi; Otomo, Toshiya*

Journal of the Physical Society of Japan, 85(9), p.094709_1 - 094709_5, 2016/09

https://doi.org/10.7566/JPSJ.85.094709

Development of divertor simulation research in the GAMMA 10/PDX tandem mirror

Nakashima, Yosuke*; Sakamoto, Mizuki*; Yoshikawa, Masayuki*; Oki, Kensuke*; Takeda, Hisahito*; Ichimura, Kazuya*; Hosoi, Katsuhiro*; Hirata, Mafumi*; Ichimura, Makoto*; Ikezoe, Ryuya*; et al.

Proceedings of 25th IAEA Fusion Energy Conference (FEC 2014) (CD-ROM), 8 Pages, 2014/10

Conduction-band electronic states of YbInCu studied by photoemission and soft X-ray absorption spectroscopies

Utsumi, Yuki*; Sato, Hitoshi*; Kurihara, Hidenao*; Maso, Hiroyuki*; Hiraoka, Koichi*; Kojima, Kenichi*; Tobimatsu, Komei*; Okochi, Takuo*; Fujimori, Shinichi; Takeda, Yukiharu; et al.

Physical Review B, 84(11), p.115143_1 - 115143_7, 2011/09

https://doi.org/10.1103/PhysRevB.84.115143

We have studied conduction-band (CB) electronic states of a typical valence-transition compound YbInCu by means of temperature-dependent hard X-ray photoemission spectroscopy (HX-PES), soft X-ray absorption spectroscopy (XAS), and soft X-ray photoemission spectroscopy (SX-PES) of the valence band. We have described the valence transition in YbInCu in terms of the charge transfer from the CB to Yb 4 states.

Universal magnetic structure of the half-magnetization phase in Cr-based spinels

Matsuda, Masaaki; Oyama, Kenji*; Yoshii, Shunsuke*; Nojiri, Hiroyuki*; Frings, P.*; Duc, F.*; Vignolle, B.*; Rikken, G. L. J. A.*; Regnault, L.-P.*; Lee, S.-H.*; et al.

Physical Review Letters, 104(4), p.047201_1 - 047201_4, 2010/01

https://doi.org/10.1103/PhysRevLett.104.047201

Structural relations between two ground states of NaVO under high pressure; A Synchrotron X-ray diffraction study

Owada, Kenji; Fujii, Yasuhiko; Muraoka, Jiro*; Nakao, Hironori*; Murakami, Yoichi; Noda, Yukio*; Osumi, Hiroyuki*; Ikeda, Naoshi*; Shobu, Takahisa; Isobe, Masahiko*; et al.

Physical Review B, 76(9), p.094113_1 - 094113_10, 2007/09

https://doi.org/10.1103/PhysRevB.76.094113

Structural relations between two ground states of the ANNNI (Axial Next Nearest Neighbor Ising) compound NaVO, C- and C-phases below and above the transition pressure = 1 GPa, were investigated by X-ray diffraction and scattering techniques. The structure of the C-phase is well explained by the () pattern which is one of four layers () of the C-phase, however, the amount of the atomic shifts under the conditions 1.6 GPa and 6 K is 27% that under ambient pressure. On the other hand, resonant X-ray scattering showed that the charges are disproportionated under high pressure. Based on these facts, it was concluded that charge disproportionation corresponds to the Ising variable in NaVO, where the atomic shifts are regarded as linearly coupled to the Ising spins. These results lead to the hypothesis that the competitive interactions between the Ising spins may result from the Ising spin-phonon coupling.

Rhemium-186-monoaminemonoamidedithiol-conjugated bisphosphonate derivatives for bone pain palliation

Ogawa, Kazuma*; Mukai, Takahiro*; Arano, Yasushi*; Otaka, Akira*; Ueda, Masashi*; Uehara, Tomoya*; Magata, Yasuhiro*; Hashimoto, Kazuyuki; Saji, Hideo*

Nuclear Medicine and Biology, 33(4), p.513 - 520, 2006/05

https://doi.org/10.1016/j.nucmedbio.2006.03.006

To develop a radiopharmaceutical for the palliation of painful bone metastases based on the concept of bifunctional radiopharmaceuticals, we synthesized a bisphosphonate derivative labeled with rhenium-186 (Re) that contains a hydroxyl group at the central carbon of its bisphosphonate structure and attached a stable Re-MAMA chelate to the amino group of a 4-amino-butylidene-bisphosphonate derivative, Re-MAMA-HBP, and investigated the effect of a hydroxyl group at the central carbon of its bisphosphonate structure on the affinity for hydroxyapatite and biodistribution by conducting a comparative study with Re-MAMA-BP. Re-MAMA-HBP was prepared by a reaction with ReO and SnCl in citrate buffer after the deprotection of trityl groups of Tr-MAMA-HBP. After reversed phase HPLC, Re-MAMA-HBP had a radiochemical purity of over 95 %. Compared with Re-MAMA-BP, Re-MAMA-HBP showed a greater affinity for hydroxyapatite beads in vitro and accumulated a significantly higher level in the femur in vivo. Thus, the introduction of a hydroxyl group into Re complex-conjugated bisphosphonates would be effective in enhancing accumulation in bone. These findings provide useful information on the design of bone-seeking therapeutic radiopharmaceuticals.