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Journal Articles

Test structure for determining the charge distribution in the oxide of MOS structure

Takahashi, Yoshihiro*; Imaki, Shunsaku*; Onishi, Kazunori*; Yoshikawa, Masahito

Proceedings of IEEE 1995 International Coferece on Microelectronic Test Structures, Vol.8, p.243 - 246, 1995/03

no abstracts in English

Journal Articles

The Change of the charge distribution in the oxide layer of MOS structure with NH$$_{3}$$ annealing due to $$gamma$$-ray irradiation; Gate voltage dependence

Imaki, Shunsaku*; Takahashi, Yoshihiro*; Yoshikawa, Masahito; Onishi, Kazunori*

Heisei-7-Nendo Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Rombunshu, 0, p.151 - 152, 1995/00

no abstracts in English

Journal Articles

A Slanted etching method to analyze the trapped charge distribution in the insulators of MIS structures

Onishi, Kazunori*; Takahashi, Yoshihiro*; Imaki, Shunsaku*; *; Yoshikawa, Masahito

Proc. of 21st Int. Symp. for Testing and Failure Analysis (ISTFA 95), 0, p.269 - 274, 1995/00

no abstracts in English

Journal Articles

Evaluation of charge distribution in insulators by means of slanted etching

Imaki, Shunsaku*; *; Takahashi, Yoshihiro*; Yoshikawa, Masahito; Onishi, Kazunori*

Heisei-5-Nendo (Dai-37-Kai) Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Koen Rombunshu; Zairyo, Bussei, p.135 - 136, 1993/00

no abstracts in English

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