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Journal Articles

Band gap formation in graphene by hybridization with Hex-Au(001) reconstructed surface

Terasawa, Tomoo; Matsunaga, Kazuya*; Hayashi, Naoki*; Ito, Takahiro*; Tanaka, Shinichiro*; Yasuda, Satoshi; Asaoka, Hidehito

Vacuum and Surface Science, 66(9), p.525 - 530, 2023/09

As Au (001) surfaces exhibit a quasi-one-dimensional corrugated structure, Hex-Au(001), its periodicity was predicted to change the electronic structure of graphene when graphene was grown on this surface. Furthermore, the hybridization between graphene and Au is known to introduce bandgap and spin polarization into graphene. Here, we report angle-resolved photoemission spectroscopy and density functional theory calculation of graphene on a Hex-Au(001) surface. A bandgap of 0.2 eV in the graphene Dirac cone was observed at the crossing point of the graphene Dirac cone and Au 6sp bands, indicating that the origin of the bandgap formation was the hybridization between the graphene Dirac cone and Au 6sp band. We discussed the hybridization mechanism and anticipated spin injection into the graphene Dirac cone.

Journal Articles

Band gap opening in graphene by hybridization with Au (001) reconstructed surfaces

Terasawa, Tomoo; Matsunaga, Kazuya*; Hayashi, Naoki*; Ito, Takahiro*; Tanaka, Shinichiro*; Yasuda, Satoshi; Asaoka, Hidehito

Physical Review Materials (Internet), 7(1), p.014002_1 - 014002_10, 2023/01

 Times Cited Count:3 Percentile:72.03(Materials Science, Multidisciplinary)

Au(001) surfaces exhibit a complex reconstructed structure [Hex-Au(001)] comprising a hexagonal surface and square bulk lattices, yielding a quasi-one-dimensional corrugated surface. When graphene was grown on this surface, the periodicity of the corrugated surface was predicted to change the electronic structure of graphene, forming bandgaps and new Dirac points. Furthermore, the graphene-Au interface is promising for bandgap generation and spin injection due to band hybridization. Here, we report the angle-resolved photoemission spectroscopy and density functional calculation of graphene on a Hex-Au(001) surface. The crossing point of the original and replica graphene $$pi$$ bands showed no bandgap, suggesting that the one-dimensional potential was too small to modify the electronic structure. A bandgap of 0.2 eV was observed at the crossing point of the graphene $$pi$$ and Au $$6sp$$ bands, indicating that the bandgap is generated using hybridization of the graphene $$pi$$ and Au $$6sp$$ bands. We discussed the hybridization mechanism and concluded that the R30 configuration between graphene and Au and an isolated electronic structure of Au are essential for effective hybridization between graphene and Au. We anticipate that hybridization between graphene $$pi$$ and Au $$6sp$$ would result in spin injection into graphene.

Journal Articles

Controlled growth of boron-doped epitaxial graphene by thermal decomposition of a B$$_{4}$$C thin film

Norimatsu, Wataru*; Matsuda, Keita*; Terasawa, Tomoo; Takata, Nao*; Masumori, Atsushi*; Ito, Keita*; Oda, Koji*; Ito, Takahiro*; Endo, Akira*; Funahashi, Ryoji*; et al.

Nanotechnology, 31(14), p.145711_1 - 145711_7, 2020/04

 Times Cited Count:6 Percentile:38.95(Nanoscience & Nanotechnology)

We show that boron-doped epitaxial graphene can be successfully grown by thermal decomposition of a boron carbide thin film, which can also be epitaxially grown on a silicon carbide substrate. The interfaces of B$$_{4}$$C on SiC and graphene on B$$_{4}$$C had a fixed orientation relation, having a local stable structure with no dangling bonds. The first carbon layer on B$$_{4}$$C acts as a buffer layer, and the overlaying carbon layers are graphene. Graphene on B$$_{4}$$C was highly boron doped, and the hole concentration could be controlled over a wide range of 2$$times$$10$$^{13}$$ to 2$$times$$10$$^{15}$$ cm$$^{-2}$$. Highly boron-doped graphene exhibited a spin-glass behavior, which suggests the presence of local antiferromagnetic ordering in the spin-frustration system. Thermal decomposition of carbides holds the promise of being a technique to obtain a new class of wafer-scale functional epitaxial graphene for various applications.

Journal Articles

Direct observation of dispersive Kondo resonance peaks in a heavy-fermion system

Im, H. J.*; Ito, Takahiro*; Kim, H.-D.*; Kimura, Shinichi*; Lee, K. E.*; Hong, J. B.*; Kwon, Y. S.*; Yasui, Akira; Yamagami, Hiroshi

Physical Review Letters, 100(117), p.176402_1 - 176402_4, 2008/05

 Times Cited Count:59 Percentile:87.88(Physics, Multidisciplinary)

Ce 4$$d$$-4$$f$$ resonant angle-resolved photoemission spectroscopy was carried out to study the electronic structure of strongly correlated Ce 4$$f$$ electrons in a quasi-two-dimensional nonmagnetic heavy-fermion system CeCoGe$$_{1.2}$$Si$$_{0.8}$$. For the first time, dispersive coherent peaks of an $$f$$ state crossing the Fermi level, the so-called Kondo resonance, are directly observed together with the hybridized conduction band. Moreover, the experimental band dispersion is quantitatively in good agreement with a simple hybridization-band picture based on the periodic Anderson model. The obtained physical quantities, i.e., coherent temperature, Kondo temperature, and mass enhancement, are comparable to the results of thermodynamic measurements. These results manifest an itinerant nature of Ce 4$$f$$ electrons in heavy-fermion systems and clarify their microscopic hybridization mechanism.

Oral presentation

Modification of electronic band structure of graphene on Hex-Au(100) reconstructed surface

Terasawa, Tomoo; Yasuda, Satoshi; Hayashi, Naoki*; Norimatsu, Wataru*; Ito, Takahiro*; Machida, Shinichi*; Yano, Masahiro; Saiki, Koichiro*; Asaoka, Hidehito

no journal, , 

We report the band structure of graphene grown on hex-Au(001) using angle resolved photoemission spectroscopy (ARPES). We prepared graphene on hex-Au(001) by chemical vapor deposition and took ARPES image of the sample at AichiSR BL7U. The linear graphene band shows the intensity reduction at the binding energy of approximately 0.9 eV, indicating the modification of band structure of graphene by quasi-one dimensional potential of the hex-Au(001) reconstructed surface.

Oral presentation

Electronic band modification of graphene by surface reconstruction of Au (001)

Terasawa, Tomoo; Yasuda, Satoshi; Hayashi, Naoki*; Norimatsu, Wataru*; Ito, Takahiro*; Machida, Shinichi*; Yano, Masahiro; Saiki, Koichiro*; Asaoka, Hidehito

no journal, , 

Oral presentation

Relation between thermal radiation intensity and band structure of graphene on Au

Terasawa, Tomoo; Yasuda, Satoshi; Hayashi, Naoki*; Norimatsu, Wataru*; Ito, Takahiro*; Machida, Shinichi*; Asaoka, Hidehito

no journal, , 

Graphene shows absorptivity and emissivity of 2.3% independent from the wavelength, however, the wavelength selectivity of the optical properties is required for device applications. Here we report the observation of the electronic band structure and thermal radiation of graphene grown on hex-Au(001) structure. The thermal radiation of graphene grown on hex-Au(001) was decreased in the optical microscopy which observed the light with the wavelength of 700-900 nm. The same sample showed the modified band structure observed by angle resolved photoemission spectroscopy. We will discuss the relation between the thermal radiation and band structure of graphene on Au substrates.

Oral presentation

Band modification of graphene by periodic potential of Au(100) reconstructed surface

Terasawa, Tomoo; Yasuda, Satoshi; Hayashi, Naoki*; Norimatsu, Wataru*; Ito, Takahiro*; Machida, Shinichi*; Yano, Masahiro; Saiki, Koichiro*; Asaoka, Hidehito

no journal, , 

Oral presentation

Modification of emissivity of graphene by surface reconstruction of Au(001)

Terasawa, Tomoo; Yasuda, Satoshi; Hayashi, Naoki*; Norimatsu, Wataru*; Ito, Takahiro*; Machida, Shinichi*; Asaoka, Hidehito

no journal, , 

no abstracts in English

Oral presentation

Origin of energy gap of graphene grown on Hex Au(001) substrate

Terasawa, Tomoo; Yasuda, Satoshi; Matsunaga, Kazuya*; Hayashi, Naoki*; Tanaka, Shinichiro*; Norimatsu, Wataru*; Ito, Takahiro*; Machida, Shinichi*; Asaoka, Hidehito

no journal, , 

Graphene grown on Hex-Au(001) substrate shows an energy gap in its $$pi$$-band. Previous reports speculated that the periodic potential of Hex-Au(001) resulted in the energy gap formation in the $$pi$$-band of graphene. In the present study, we found by angle-resolved photoemission spectroscopy that the hybridyzation of sp-band of Hex-Au(001) and $$pi$$-band of graphene created the energy gap in the $$pi$$-band of graphene.

Oral presentation

Band hybridization between graphene and Hex-Au(001) reconstructed surface

Terasawa, Tomoo; Matsunaga, Kazuya*; Hayashi, Naoki*; Ito, Takahiro*; Tanaka, Shinichiro*; Yasuda, Satoshi; Asaoka, Hidehito

no journal, , 

As a Hex-Au(001) surface shows one-dimensional corrugation and is chemically inert, it has been employed to study the effect of one-dimensional potential on graphene. Such potential has been expected to make the band structure of graphene anisotropic, which shows the mini-gap at the zone boundary across the potential and the high group velocity along the potential. However, the bandgap in the graphene on Hex-Au(001) was only indirectly suggested by scanning tunneling spectroscopy. Here, we report the band structure of graphene on Hex-Au(001) substrates using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculation. The ARPES image shows the bandgap in the graphene $$pi$$ band close to the Au 6sp band. The DFT calculated band structure shows the bandgap not at the crossing point of the graphene $$pi$$ bands but that of graphene $$pi$$ and Au 6sp bands. We thus conclude that the bandgap originates from the hybridization between graphene and Au. This hybridization is similar to that observed in the graphene and Au interface on the SiC substrate. We expect that the hybridization between graphene and Au is essential as the Rashba splitting of 100 meV was observed around the gap.

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