Anomalous lattice deformation in GaN/SiC(0001) measured by high-speed synchrotron X-ray diffraction

Sasaki, Takuo; Ishikawa, Fumitaro*; Takahashi, Masamitsu

Applied Physics Letters, 108(1), p.012102_1 - 012102_5, 2016/01

AA2015-0769.pdf:2.43MB

https://doi.org/10.1063/1.4939450

Mechanisms determining the structure of gold-catalyzed GaAs nanowires studied by in situ X-ray diffraction

Takahashi, Masamitsu; Kozu, Miwa*; Sasaki, Takuo; Hu, W.*

Crystal Growth & Design, 15(10), p.4979 - 4985, 2015/10

https://doi.org/10.1021/acs.cgd.5b00915

three-dimensional X-ray reciprocal-space mapping of InGaAs multilayer structures grown on GaAs(001) by MBE

Sasaki, Takuo; Takahashi, Masamitsu; Suzuki, Hidetoshi*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Journal of Crystal Growth, 425, p.13 - 15, 2015/09

https://doi.org/10.1016/j.jcrysgro.2015.03.044

Defect characterization in compositionally graded InGaAs layers on GaAs (001) grown by MBE

Sasaki, Takuo; Norman, A. G.*; Romero, M. J.*; Al-Jassim, M. M.*; Takahashi, Masamitsu; Kojima, Nobuaki*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Physica Status Solidi (C), 10(11), p.1640 - 1643, 2013/11

https://doi.org/10.1002/pssc.201300284

High-speed three-dimensional reciprocal-space mapping during molecular beam epitaxy growth of InGaAs

Hu, W.; Suzuki, Hidetoshi*; Sasaki, Takuo*; Kozu, Miwa*; Takahashi, Masamitsu

Journal of Applied Crystallography, 45(5), p.1046 - 1053, 2012/10

https://doi.org/10.1107/S0021889812036175

Real-time structural analysis of compositionally graded InGaAs/GaAs(001) layers

Sasaki, Takuo*; Suzuki, Hidetoshi*; Inagaki, Makoto*; Ikeda, Kazuma*; Shimomura, Kenichi*; Takahashi, Masamitsu; Kozu, Miwa*; Hu, W.; Kamiya, Itaru*; Oshita, Yoshio*; et al.

IEEE Journal of Photovoltaics, 2(1), p.35 - 40, 2012/01

https://doi.org/10.1109/JPHOTOV.2011.2174198

Growth temperature dependence of strain relaxation during InGaAs/GaAs(0 0 1) heteroepitaxy

Sasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Takahashi, Masamitsu; Fujikawa, Seiji; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Journal of Crystal Growth, 323(1), p.13 - 16, 2011/05

https://doi.org/10.1016/j.jcrysgro.2010.10.005

Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) molecular beam epitaxy was studied by in situ X-ray reciprocal space mapping. Evolution of the residual strain and crystal quality for the InGaAs film was obtained as a function of film thickness at growth temperatures of 420, 445 and 477 C. In the early stages of strain relaxation, it was found that evolution of the residual strain and crystal quality was dependent on the growth temperature. In order to discuss this observation quantitatively, the strain relaxation model was proposed based on the Dodson-Tsao kinetic model, and its validity was demonstrated by good agreement with the experimental residual strain. Additionally, rate coefficients reflecting dislocation motions during strain relaxation were obtained as a function of growth temperature and strain relaxation was discussed in terms of the thermally active dislocation motion.

Effect of base doping concentration on radiation-resistance for GaAs sub-cells in InGaP/GaAs/Ge

Elfiky, D.*; Yamaguchi, Masafumi*; Sasaki, Takuo*; Takamoto, Tatsuya*; Morioka, Chiharu*; Imaizumi, Mitsuru*; Oshima, Takeshi; Sato, Shinichiro; Elnawawy, M.*; Eldesoky, T.*; et al.

Japanese Journal of Applied Physics, 49(12), p.121202_1 - 121202_5, 2010/12

https://doi.org/10.1143/JJAP.49.121202

GaAs solar cells with the lower base carrier concentration under low energy proton irradiations had shown experimentally the better radiation-resistance. Analytical model based on fundamental approach for radiative and non-radiative recombination has been proposed for radiation damage in GaAs sub-cells. The radiation resistance of GaAs sub-cells as a function of base carrier concentration has been analyzed by using radiative recombination lifetime and damage coefficient for minority carrier lifetime. Numerical analysis shows good agreement with experimental results. The effect of carrier concentration upon the change of damage constant and carrier removal rate have been studied.

Study the effects of proton irradiation on GaAs/Ge solar cells

Elfiky, D.*; Yamaguchi, Masafumi*; Sasaki, Takuo*; Takamoto, Tatsuya*; Morioka, Chiharu*; Imaizumi, Mitsuru*; Oshima, Takeshi; Sato, Shinichiro; Elnawawy, M.*; Eldesuky, T.*; et al.

Proceedings of 35th IEEE Photovoltaic Specialists Conference (PVSC-35) (CD-ROM), p.002528 - 002532, 2010/06

https://doi.org/10.1109/PVSC.2010.5614633

Proton energy dependence of radiation damage to GaAs/Ge solar cells irradiated with protons with various energies (50 keV, 200 keV, 1 MeV and 9.5 MeV) were analyzed by using PC1D simulation together with SRIM simulations to investigate their electrical properties. The degradation of the open-circuit voltage is highest for 50 keV irradiation and lowest for 9.5 MeV irradiation. According to SRIM simulations the above changes in electrical properties are mainly related to damage in different regions of the solar sells.

Large-volume static compression using nano-polycrystalline diamond for opposed anvils in compact cells

Okuchi, Takuo*; Sasaki, Shigeo*; Osakabe, Toyotaka; Ono, Yoshiki*; Odake, Shoko*; Kagi, Hiroyuki*

Journal of Physics; Conference Series, 215, p.012188_1 - 012188_9, 2010/03

https://doi.org/10.1088/1742-6596/215/1/012188

We prepared super-hard nano-polycrystalline diamond (NPD) anvils for large-volume compression for intrinsically low-sensitivity methods of measurement, such as neutron scattering and NMR. These anvils are harder, larger and stronger than single crystal diamond anvils, so that they could play an ideal role to accept the larger forces. We tested supported and unsupported anvil geometries separately by using two types of compact high-pressure cells and could generate the pressure of 14 GPa for the sample volume of 0.1 mm or more. The test results demonstrate a large future potential of NPD anvils for large-volume compression.