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Journal Articles

C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance

Umeda, Takahide*; Okamoto, Mitsuo*; Arai, Ryo*; Sato, Yoshihiro*; Kosugi, Ryoji*; Harada, Shinsuke*; Okumura, Hajime*; Makino, Takahiro; Oshima, Takeshi

Materials Science Forum, 778-780, p.414 - 417, 2014/02

https://doi.org/10.4028/www.scientific.net/MSF.778-780.414
 Times Cited Count：2 Percentile：72.7(Crystallography)

Interface defects of Metal-Oxide-Semiconductors (MOSFETs) fabricated on Carbone (C) face 4H-SiC were investigated by Electrically Detected Magnet Resistance (EDMR). Gate oxide of the MOSFETs was formed by either wet-oxidation and H$$_{2}$$ annealing or dry-oxidation. The values of channel mobility for MOSFETS with wet gate oxide and dry gate oxide are less than 1 and 90 cm$$^{2}$$/Vs, respectively. By EDMR measurement under low temperature (less than 20 K), EDMR signals related to C were detected. The peak height of the signals increased with increasing $$gamma$$-ray doses, and the channel mobility decreased. From this result, it is assumed that hydrogen atoms passivating C dangling bonds are released by $$gamma$$-rays and the channel mobility decreases with increasing the C related defects.

JAEA Reports

Inhibition of sensitization in reactor pipe materials by grain boundary structure control, JAERI's nuclear research promotion program, H11-023 (Contract research)

Kokawa, Hiroyuki*; Shimada, Masayuki*; Wang, Z.*; Sato, Yutaka*; Sato, Yoshihiro*; Kiuchi, Kiyoshi

JAERI-Tech 2003-014, 22 Pages, 2003/03

JAERI-Tech-2003-014.pdf:1.68MB

no abstracts in English

Oral presentation

Electrically detected magnetic spectroscopy on interface defects in 4H-SiC (000-1) C-face metal-oxide-semiconductor field effect transistors

Umeda, Takahide*; Sato, Yoshihiro*; Arai, Ryo*; Okamoto, Mitsuo*; Harada, Shinsuke*; Kosugi, Ryoji*; Okumura, Hajime*; Makino, Takahiro; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Electrically detected magnetic resonance study on hydrogen depassivation from C-face interface defects in 4H-SiC(000$$bar{1}$$) metal-oxide-semiconductor field effect transistors

Arai, Ryo*; Umeda, Takahide*; Sato, Yoshihiro*; Okamoto, Mitsuo*; Harada, Shinsuke*; Kosugi, Ryoji*; Okumura, Hajime*; Makino, Takahiro; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Search of defect centers acting as single photon source in silicon carbide

Oshima, Takeshi; Onoda, Shinobu; Makino, Takahiro; Iwamoto, Naoya*; Johnson, B. C.*; Lohrmann, A.*; Karle, T.*; McCallum, J. C.*; Castelletto, S.*; Umeda, Takahide*; et al.

no journal, , 

no abstracts in English

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