Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Okada, Hiroshi*; Takemoto, Kazumasa*; Oikawa, Fumitake*; Furukawa, Yuzo*; Wakahara, Akihiro*; Sato, Shinichiro; Oshima, Takeshi
Physica Status Solidi (C), 6(Suppl.2), p.S631 - S634, 2009/05
Light emitting field effect transistor (FET) based-on AlGaN/GaN high electron mobility transistor (HEMT) structure with spatially selective doping of rare-earth ions (REIs) as a luminescence center in the channel is proposed and investigated. Fabricated device showed excellent I-V characteristics as a transistor with gate control. By applying a drain bias of 20 V, red emission suggesting a luminescence from Eu ion was clearly observed. Applying a negative bias to the Schottky gate decreased the luminescence intensity.
Nishio, Satoshi; Ushigusa, Kenkichi; Ueda, Shuzo; Polevoi, A.*; Kurita, Genichi; Tobita, Kenji; Kurihara, Ryoichi; Hu, G.; Okada, Hidetoshi*; Murakami, Yoshiki*; et al.
JAERI-Research 2000-029, 105 Pages, 2000/10
JAERI-Research-2000-029.pdf:4.19MB
no abstracts in English
Sato, Masayasu; Miura, Yukitoshi; Kimura, Haruyuki; Kawashima, Hisato; Sengoku, Seio; Yamamoto, Masahiro; ; Shibata, Takatoshi; Akiyama, Takashi*; Abe, Mitsushi*; et al.
Purazuma, Kaku Yugo Gakkai-Shi, 75(6), p.741 - 749, 1999/06
no abstracts in English
; ; ; ; Okubo, Minoru; Iijima, Tsutomu; *; *; *; *; et al.
JAERI-M 8360, 84 Pages, 1979/08
no abstracts in English
