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Igarashi, Takahiro; Otani, Kyohei; Komatsu, Atsushi; Kato, Chiaki; Sakairi, Masatoshi*
Bosei Kanri, 66(4), p.141 - 145, 2022/04
Metal corrosion is a material deterioration phenomenon based on electrochemical reactions on an atomic scale. In this paper, various methods for acquiring physical properties on metal surfaces using first-principles calculations were described. As examples of applying first-principles calculation to metal corrosion, the effect of hydrogen adsorption on the metal surface on the potential change and the effect of cation atoms in the aqueous solution on the corrosion resistance of the metal were reported.
Igarashi, Takahiro; Komatsu, Atsushi; Kato, Chiaki; Sakairi, Masatoshi*
Tetsu To Hagane, 107(12), p.998 - 1003, 2021/12
Times Cited Count:0 Percentile:0(Metallurgy & Metallurgical Engineering)In order to clarify the effect of environmental factors on the amount of atmospheric corrosion of steel, novel model for predicting the reduction of atmospheric corrosion considering relative humidity and rain falls was developed. We conducted a one-year calculation simulation of atmospheric corrosion in Miyakojima City, Choshi City, and Tsukuba City using the developed model. Corrosion weight loss by the simulation could reproduce the measured value well. Corrosion weight loss at each point was greatly affected by the amount of flying sea salt, relative humidity, and rain falls.
Igarashi, Takahiro; Komatsu, Atsushi; Kato, Chiaki; Sakairi, Masatoshi*
Bosei Kanri, 65(10), p.365 - 370, 2021/10
We have developed a new atmospheric simulation model considering important environmental factors such as airborne sea salt, temperature, relative humidity, and rainfall. The developed model was verified by comparing predicted values by the simulation and measured data for the weight loss by atmospheric corrosion. In addition, atmospheric corrosion simulations under open and sheltered exposure condition were conducted, and it was confirmed that the air corrosion weight loss was strongly suppressed by the surface cleaning effect due to rainfall.
Yamamoto, Masahiro; Irisawa, Eriko; Igarashi, Takahiro; Komatsu, Atsushi; Kato, Chiaki; Ueno, Fumiyoshi
Proceedings of Annual Congress of the European Federation of Corrosion (EUROCORR 2019) (Internet), 5 Pages, 2019/09
Intergranular corrosion phenomena were analysed using modified reprocessing solution. The data indicated that corrosion rates increased with time at the initial stage, and these stayed at constant value. Intergranular corrosion propagated at grain boundary in the initial stage and then attacked whole grain boundary causing drop out of grains. Corrosion rates of steady state were sum of intergranular corrosion amounts and weight losses of dropped grains. Surface appearances and cross sections of corroded samples were analyzed. The results indicated that the initial stage of intergranular corrosion was characterized by the ratio of corrosion rates between grain boundary and matrix. These ratios differed from individual grain boundaries. Total corrosion rates were affected by the distribution of these ratios. These data were based on the numerical modelling of intergranular corrosion using cellular automata. And also, calculated results were compared with these analytical data.
Chikazawa, Yoshitaka; Kato, Atsushi*; Yamamoto, Tomohiko; Kubo, Shigenobu; Ohno, Shuji; Iwasaki, Mikinori*; Hara, Hiroyuki*; Shimakawa, Yoshio*; Sakaba, Hiroshi*
Nuclear Technology, 196(1), p.61 - 73, 2016/10
Times Cited Count:1 Percentile:10.71(Nuclear Science & Technology)JSFR adopts double boundary for all sodium components. However, design measures are investigated for the secondary sodium fire inside the reactor building, which might be assumed as design extension conditions (DECs). Candidates of sodium fire measures in the secondary sodium systems such as sodium drain, nitrogen injection, pressure release valve, catch pan and leak sodium drain system have been compared from the view point of safety. Wide range of sodium fires in the steam generator room and air cooler have been analyzed evaluating performances of the candidate sodium fire measures.
Ueda, Yoshio*; Oya, Kaoru*; Ashikawa, Naoko*; Ito, Atsushi*; Ono, Tadayoshi*; Kato, Daiji*; Kawashima, Hisato; Kawamura, Gakushi*; Kenmotsu, Takahiro*; Saito, Seiki*; et al.
Purazuma, Kaku Yugo Gakkai-Shi, 88(9), p.484 - 502, 2012/09
no abstracts in English
Oya, Kaoru*; Inai, Kensuke*; Shimizu, Katsuhiro; Takizuka, Tomonori; Kawashima, Hisato; Hoshino, Kazuo; Hatayama, Akiyoshi*; Toma, Mitsunori*; Tomita, Yukihiro*; Kawamura, Gakushi*; et al.
Purazuma, Kaku Yugo Gakkai-Shi, 85(10), p.695 - 703, 2009/10
no abstracts in English
Yamamoto, Yoshihisa*; Togashi, Hideaki*; Kato, Atsushi*; Takahashi, Yuya*; Konno, Atsushi*; Teraoka, Yuden; Yoshigoe, Akitaka; Asaoka, Hidehito; Suemitsu, Maki*
Applied Surface Science, 254(19), p.6232 - 6234, 2008/07
Times Cited Count:4 Percentile:21.85(Chemistry, Physical)The room temperature adsorbed state of oxygen molecules on Si(110)-162 surface and the structural change after a mild annealing has been investigated by synchrotron radiation photoemission spectroscopy. As a result, despite the very small dosage of oxygen, Si and Si components already appear in addition to Si. This is likely to be caused by a selective adsorption of O molecules into the vicinity of already oxidized sites. After annealing, we found that binding energy of Si and Si increase and approach to their corresponding peak positions of a thermally-grown oxide, and this increase indicates relaxation of the Si-O bond length and Si-O-Si bond angle of metastable oxygen atoms.
Yamamoto, Yoshihisa*; Togashi, Hideaki*; Konno, Atsushi*; Matsumoto, Mitsutaka*; Kato, Atsushi*; Saito, Eiji*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka
Shingaku Giho, 108(80), p.65 - 70, 2008/06
The growth process of thermal oxides on Si(110) surface and the development of their interfacial bonding structures have been investigated by using real-time synchrotron radiation photoemission spectroscopy. As a result, it was clarified that the Si component in the Si 2p core-level spectra is always much higher than that of Si for 0-1 mono-layer (ML) oxides on Si(110) surface. Observations on the time-evolution of the O 1s core-level spectrum indicates that the autocatalytic-reaction model proposed for the Si(001) oxidation can be also applicable to the Si(110) oxidation.
Togashi, Hideaki*; Takahashi, Yuya*; Kato, Atsushi*; Konno, Atsushi*; Asaoka, Hidehito; Suemitsu, Maki*
Japanese Journal of Applied Physics, Part 1, 46(5B), p.3239 - 3243, 2007/05
Times Cited Count:13 Percentile:46.87(Physics, Applied)On Si(110) surface, the hole mobility is enhanced as compared with that on Si(001) surface. This surface is also to be used in the next-generation three-dimensional devices. We conducted scanning-tunneling-microscopy (STM) observation on the initial oxidation of Si(110)-162 surface. The present result suggests less occurrence of etching under the oxidation condition. There is a possibility to form an abrupt oxide/Si interface on the Si(110) surface.
Suemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka; Narita, Yuzuru*; Enta, Yoshiharu*
Japanese Journal of Applied Physics, Part 1, 46(4B), p.1888 - 1890, 2007/04
Times Cited Count:12 Percentile:44.48(Physics, Applied)Initial oxidation of Si(110) surface has been investigated by using real-time X-ray photoemission spectroscopy. The time evolution of the O 1s spectrum shows occurrence of rapid oxidation just after the introduction of the oxygen molecules, which is evidenced by the considerable peak intensity corresponding to oxygen exposure of as low as 1.5L (1L=1.3310 Pa s). This initial oxide is dominated by a state with a relatively low binding energy, which is gradually replaced by a state with a relatively high binding energy with the increase of the oxygen exposure, resulting in the low-KE shift of the O 1s peak. Comparison with previously reported O 1s spectra from dry-oxidized Si(111) surface suggests oxidation at or around the adatoms of Si(110)-162 clean surface as a likely oxidation state for this low-binding-energy peak.
Suemitsu, Maki*; Togashi, Hideaki*; Kato, Atsushi*; Takahashi, Yuya*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka; Asaoka, Hidehito
Materials Research Society Symposium Proceedings, Vol.996, p.19 - 25, 2007/00
From its high hole mobility, as well as its inevitable usage as an active layer in multi-gated FETs, Si(110) surface is expected to play a crucial role in the next generation CMOS devices. We have investigated the initial oxidation of Si(110) surface by using SR-XPS and STM. Reflecting its atomistic structure of the 162 reconstruction, initial oxidation of Si(110) surface shows a unique behavior which is not observed on other surfaces like (111) and (001).
Suemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka; Narita, Yuzuru*
Shingaku Giho, 106(108), p.61 - 63, 2006/06
no abstracts in English
Suemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka; Enta, Yoshiharu*; Narita, Yuzuru*
ECS Transactions, 3(2), p.311 - 316, 2006/00
Initial thermal oxidation of Si(110) surface has been investigated by using real-time X-ray photoemission spectroscopy with synchrotron radiation. The Si(110) initial oxidation is characterized by presence of a rapid oxidation just after the introduction of gaseous oxygen molecules. Peak separation of the O1s photoemission spectra suggests the presence of at least two distinct oxidation sites on the surface, which may reflect the complicated surface structure of the Si(110)-162 reconstruction.
Suemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka; Narita, Yuzuru*
no journal, ,
Initial kinetics in dry oxidation of Si(110) surface, a key technology in the next-generation CMOS technology, has been investigated by using synchrotron-radiation photoemission spectroscopy. As a result, the uptake curve of the Si(110) oxide in its high-pressure-low-temperature reaction regime is found to consist of three characteristic time domains, in sharp contrast with the single domain obtained on Si(001). The difference is understood in terms of the different atomistic arrangement on the surface.
Suemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka; Narita, Yuzuru*
no journal, ,
By using real-time photoemission spectroscopy, kinetics of initial oxidation of Si(110)-162 surface has been investigated and is compared with that of Si(100) surface. Dry oxidation of Si(110) shows rapid initial oxidation just after introduction of the oxygen, which is associated with an O1s state with a weaker binding energy. As the oxidation proceeds, another O1s state with a stronger binding energy develops. The rapid initial oxidation is related to oxidation at or around the Si(111)-like Si adatoms, which are reportedly present in the 162 reconstruction of the Si(110) surface.
Togashi, Hideaki*; Kato, Atsushi*; Yamamoto, Yoshihisa*; Konno, Atsushi*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka; Narita, Yuzuru*
no journal, ,
Initial oxidation processes of Si(110) surface have not been studied although they are important for the next generation device. Now we observed time evolution of oxygen coverage at the Si(110)-162 surface in the initial oxidation region by using real-time photoemission spectroscopy with synchrotron radiation. As a conclusion, rapid initial oxidation processes, in which several tens per cent of the surface was oxidized just after oxygen exposure, were found in experimental conditions of 813 K and oxygen pressure of 1.110 Pa. Such a rapid initial oxidation process has not been observed in the initial oxidation of Si(100)-21 surface. This phenomenon may be related with adatom clusters, which exist periodically on the Si(110)-162 surface. For example, An adatom cluster, which consists of five Si atoms, shares 0.25 ML on the Si(110)-162 reconstruction surface in the pentagon-pair model. This model consistents with the initial oxygen coverage obtained in this experiment.
Kato, Atsushi*; Togashi, Hideaki*; Yamamoto, Yoshihisa*; Konno, Atsushi*; Narita, Yuzuru*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka
no journal, ,
Initial oxidation processes of ultra-thin oxide layers on Si(110)-162 surfaces have not been studied yet. Making clear the chemical reaction mechanisms is, however, important for device fabrication. We observed time evolution of oxide coverage on the Si(110)-162 surface at room temperature. The O1s photoemission spectrum increased with increasing oxygen dose and the peak position shifted to higher binding energy side at oxygen pressure of 1.110 Pa. This peak shift is responsible to two kinds of peak components and their independent time evolutions. Time evolution of each component, behaviour of Si2p spectrum, and thermal stability of the surface reveal that the oxidation of Si(110) surface has different characters in compared with that of Si(100) surface. These facts can be understood on the basis of adatom clusters on the Si(110) surface.
Suemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka; Narita, Yuzuru*
no journal, ,
no abstracts in English
Togashi, Hideaki*; Kato, Atsushi*; Yamamoto, Yoshihisa*; Konno, Atsushi*; Narita, Yuzuru*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka; Takahashi, Yuya*; Asaoka, Hidehito
no journal, ,
no abstracts in English