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Igarashi, Shinichi*; Haraguchi, Masaharu*; Aihara, Jun; Saito, Takeru*; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi
Journal of Electron Microscopy, 53(3), p.223 - 228, 2004/08
Times Cited Count：4 Percentile：24.19(Microscopy)no abstracts in English
Yamaguchi, Kenji; Haraguchi, Masaharu*; Katsumata, Toshinobu*; Shimura, Kenichiro; Yamamoto, Hiroyuki; Hojo, Kiichi
Thin Solid Films, 461(1), p.13 - 16, 2004/08
Times Cited Count：10 Percentile：46.84(Materials Science, Multidisciplinary)no abstracts in English
Igarashi, Shinichi*; Katsumata, Toshinobu*; Haraguchi, Masaharu*; Saito, Takeru*; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi
Vacuum, 74(3-4), p.619 - 624, 2004/06
Times Cited Count：6 Percentile：27.83(Materials Science, Multidisciplinary)no abstracts in English
-FeSi
filmsIgarashi, Shinichi; Katsumata, Toshinobu; Haraguchi, Masaharu; Saito, Takeru; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi
Transactions of the Materials Research Society of Japan, 28(4), p.1153 - 1156, 2003/12
We have evaluated the crystal structure of the -FeSi films formed with various sputter etching of Si substrate. Ne
sputter etching of Si (100) substrate was performed with ion energies of 1, 3, and 10 keV. After each etching, the substrate was annealed at a temperature of 1073 K for 30 min. The -FeSi films of 100 nm in thickness were formed at 973 K with the amount of deposited Fe, 30 nm. X-ray diffraction revealed that these films have polycrystalline -FeSi structure but strong preferential orientation aligned as -FeSi (100) // Si (100). Furthermore, the oriented structure of the film was improved by lowering the incident energy of Ne.
-FeSi fabricated by ion beam sputter deposition methodSaito, Takeru; Yamamoto, Hiroyuki; Yamaguchi, Kenji; Nakanoya, Takamitsu; Hojo, Kiichi; Haraguchi, Masaharu*; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Tanaka, Tomoaki*; Shimada, Hiromichi*
Nuclear Instruments and Methods in Physics Research B, 206, p.321 - 325, 2003/05
Times Cited Count：7 Percentile：46.83(Instruments & Instrumentation)no abstracts in English
thin film formed by ion beam sputter deposition methodHaraguchi, Masaharu*; Yamamoto, Hiroyuki; Yamaguchi, Kenji; Nakanoya, Takamitsu; Saito, Takeru; Sasase, Masato*; Hojo, Kiichi
Nuclear Instruments and Methods in Physics Research B, 206, p.313 - 316, 2003/05
Times Cited Count：17 Percentile：72.74(Instruments & Instrumentation)no abstracts in English
-FeSi
film) for next generation using IBSD methodHeya, Akira*; Haraguchi, Masaharu*; Yamamoto, Hiroyuki; Saito, Takeru*; Yamaguchi, Kenji; Hojo, Kiichi
Ishikawaken Kogyo Shikenjo Heisei-14-Nendo Kenkyu Hokoku, (52), p.9 - 12, 2003/00
no abstracts in English
-FeSi thin filmHaraguchi, Masaharu; Yamamoto, Hiroyuki; Yamaguchi, Kenji; Sasase, Masato*; Nakanoya, Takamitsu; Saito, Takeru; Hojo, Kiichi
Shinku, 45(10), p.749 - 753, 2002/10
no abstracts in English
-FeSi) thin filmsSaito, Takeru; Yamamoto, Hiroyuki; Sasase, Masato*; Nakanoya, Takamitsu; Yamaguchi, Kenji; Haraguchi, Masaharu*; Hojo, Kiichi
Thin Solid Films, 415(1-2), p.138 - 142, 2002/08
Times Cited Count：20 Percentile：67.09(Materials Science, Multidisciplinary)no abstracts in English
-FeSi thin films on Si(III) surface by solid phase epitaxy (SPE) analyzed by means of synchrotron radiation XPS (SR-XPS)Saito, Takeru; Yamamoto, Hiroyuki; Asaoka, Hidehito; Haraguchi, Masaharu*; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Tanaka, Tomoaki*; Shimada, Hiromichi*; Hojo, Kiichi
Analytical Sciences (CD-ROM), 17(Suppl.), p.1073 - 1076, 2002/03
no abstracts in English
-FeSi on Si(111) substrate studied by means of SR-XPSSaito, Takeru; Yamamoto, Hiroyuki; Haraguchi, Masaharu*; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Tanaka, Tomoaki*; Shimada, Hiromichi*; Hojo, Kiichi
Photon Factory Activity Report 2001, (19), P. 205, 2001/00
no abstracts in English
