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Journal Articles

High reactivity of H$$_{2}$$O vapor on GaN surfaces

Sumiya, Masatomo*; Sumita, Masato*; Tsuda, Yasutaka; Sakamoto, Tetsuya; Sang, L.*; Harada, Yoshitomo*; Yoshigoe, Akitaka

Science and Technology of Advanced Materials, 23(1), p.189 - 198, 2022/00

https://doi.org/10.1080/14686996.2022.2052180
 Times Cited Count：4 Percentile：51.62(Materials Science, Multidisciplinary)

GaN is an attracting material for power-electronic devices. Understanding the oxidation at GaN surface is important for improving metal-oxide-semiconductor (MOS) devices. In this study, the oxidation at GaN surfaces depending on the GaN crystal planes (+c, -c, and m-plane) was investigated by real time XPS and DFT-MD simulation. We found that H$$_{2}$$O vapor has the highest reactivity due to the spin interaction between H$$_{2}$$O and GaN surfaces. The bond length between the Ga and N on the -c GaN surface was increased by OH attacking the back side of three-fold Ga atom. The chemisorption on the m-plane was dominant. The intense reactions of oxidation and Al$$_{x}$$Ga$$_{1-x}$$N formation for p-GaN were observed at the interface of the Al$$_{2}$$O$$_{3}$$ layer deposited by ALD using H$$_{2}$$O vapor. This study suggests that an oxidant gas other than H$$_{2}$$O and O$$_{2}$$ should be used to avoid unintentional oxidation during Al$$_{x}$$Ga$$_{1-x}$$N atomi layer deposition.

Journal Articles

Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory

Nigo, Seisuke*; Kubota, Masato; Harada, Yoshitomo*; Hirayama, Taisei*; Kato, Seiichi*; Kitazawa, Hideaki*; Kido, Giyu*

Journal of Applied Physics, 112(3), p.033711_1 - 033711_6, 2012/08

https://doi.org/10.1063/1.4745048
 Times Cited Count：61 Percentile：89.42(Physics, Applied)

Oral presentation

In-situ observation of oxidation on GaN surface by real-time XPS under irradiating oxidation gas

Sumiya, Masatomo*; Tsuda, Yasutaka; Sakamoto, Tetsuya*; Sumita, Masato*; Sang, L.*; Harada, Yoshitomo*; Yoshigoe, Akitaka

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