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Park, J.-H.*; Wakahara, Akihiro*; Okada, Hiroshi*; Furukawa, Yuzo*; Kim, Y.-T.*; Chang, H.-J.*; Song, J.*; Shin, S.*; Lee, J.-H.*; Sato, Shinichiro; et al.
Japanese Journal of Applied Physics, 49(3), p.032401_1 - 032401_5, 2010/03
Times Cited Count：1 Percentile：5.52(Physics, Applied)Okada, Hiroshi*; Takemoto, Kazumasa*; Oikawa, Fumitake*; Furukawa, Yuzo*; Wakahara, Akihiro*; Sato, Shinichiro; Oshima, Takeshi
Physica Status Solidi (C), 6(Suppl.2), p.S631 - S634, 2009/05
Light emitting field effect transistor (FET) based-on AlGaN/GaN high electron mobility transistor (HEMT) structure with spatially selective doping of rare-earth ions (REIs) as a luminescence center in the channel is proposed and investigated. Fabricated device showed excellent I-V characteristics as a transistor with gate control. By applying a drain bias of 20 V, red emission suggesting a luminescence from Eu ion was clearly observed. Applying a negative bias to the Schottky gate decreased the luminescence intensity.
Okada, Hiroshi*; Takemoto, Kazumasa*; Shimojo, Takashi*; Hata, Takayuki*; Furukawa, Yuzo*; Wakahara, Akihiro*; Sato, Shinichiro; Oshima, Takeshi
no journal, ,
no abstracts in English
Okada, Hiroshi*; Park, J.*; Hata, Takayuki*; Wakahara, Akihiro*; Furukawa, Yuzo*; Sato, Shinichiro; Oshima, Takeshi
no journal, ,
no abstracts in English
Hata, Takayuki*; Okada, Hiroshi*; Wakahara, Akihiro*; Furukawa, Yuzo*; Sato, Shinichiro; Oshima, Takeshi
no journal, ,
Hata, Takayuki*; Okada, Hiroshi*; Furukawa, Yuzo*; Wakahara, Akihiro*; Sato, Shinichiro; Oshima, Takeshi
no journal, ,
no abstracts in English
Okada, Hiroshi*; Hata, Takayuki*; Kondo, Masaki*; Furukawa, Yuzo*; Wakahara, Akihiro*; Oshima, Takeshi; Sato, Shinichiro
no journal, ,
no abstracts in English
