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Journal Articles

Commentaries for third secondary national examination on fiscal 2010 for the professional engineer of nuclear and radiation; Commentaries (Part 2) including key point for elective examinations

Sasaki, Satoru; Suzuki, Soju; Nakano, Junichi; Takamatsu, Misao; Matoba, Ichiyo*; Nakano, Makoto*; Oketani, Koichiro*; Natsume, Tomohiro*

Genshiryoku eye, 57(2), p.66 - 75, 2011/02

http://ci.nii.ac.jp/naid/40017428113

no abstracts in English

Journal Articles

Study of high-energy proton and electron irradiation effects on poly- and single-crystalline CuInSe$$_{2}$$ films

Okada, Hiroshi*; Natsume, Satoshi*; Wakahara, Akihiro*; Yoshida, Akira*; Oshima, Takeshi; Kamiya, Tomihiro

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.147 - 150, 2004/10

no abstracts in English

Oral presentation

Electrical properties of radiation-damaged CuInSe$$_{2}$$ thin films

Yoshida, Akira*; Natsume, Satoshi*; Lee, H.-S.*; Okada, Hiroshi*; Wakahara, Akihiro*; Oshima, Takeshi; Ito, Hisayoshi

no journal, , 

CuInSe$$_{2}$$ (CIS)-based thin film solar cells have excellent radiation hardness and are promising in applications in space. However, although CIS thin film is used as an absorption layer in the cell, the details of radiation-induced degradation mechanism are not yet clear. In this report, n-type CIS thin film was fabricated by RF sputtering and was annealed at 823 K together with Cu$$_{2}$$Se$$_{3}$$ film evaporated on the CIS thin film, resulting in p-type CIS thin layer. The electrical properties of p-type CIS thin films were investigated. These films were irradiated with high energy electrons, up to the irradiation fluence 2$$times$$10$$^{17}$$[1/cm$$^{2}$$] of electrons accelerated up to 2 MeV. Over 1$$times$$10$$^{17}$$[1/cm$$^{2}$$], the resistivity began to increase drastically. The temperature dependence of the resistivity was measured below room temperature down to 20 K. These behaviors are explained by the grain-boundary-dominated transport with the increased barrier energy at the grain boundary.

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