Silicon isotope separation utilizing infrared multiphoton dissociation of SiF irradiated with two-frequency CO laser lights

Yokoyama, Atsushi; Oba, Hironori; Hashimoto, Masashi; Katsumata, Keiichi; Akagi, Hiroshi; Ishii, Takeshi*; Oya, Akio*; Arai, Shigeyoshi*

Applied Physics B, 79(7), p.883 - 889, 2004/11

https://doi.org/10.1007/s00340-004-1642-z

Silicon isotope separation has been done utilizing the Infrared Multiphoton Dissociation of SiF irradiated with two-frequency CO laser lights. The two-frequency excitation method improved the separation efficiency with keeping the high enrichment factors. For example, SiF with the Si fraction of 99.4 % was obtained at 40.0 % dissociation of SiF after the simultaneous irradiation of 100 pulses with 966.23 cm photons (0.089 J/cm) and 954.55 cm photons (0.92 J/cm), while 1000 pulses were needed to obtain 99.0 % of Si at 27.2 % dissociation in the case of single frequency irradiation at 954.55 cm (0.92 J/cm). The single-step enrichment factors of Si and Si increased with increasing SiF pressure. The reason for this enhancement has been discussed in terms of the rotational and vibrational relaxations by collisions with ambient gases.

Study on Present Status ofMeasurement Technologies for Low-level Radioactivity Concentration in Waste

Urayama, Katsumi*; Endo, Yasumi*; Kino, Kenichiro*; Oya, Akio*

JNC TJ8420 2000-006, 68 Pages, 2000/03

JNC-TJ8420-2000-006.pdf:1.94MB

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