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Journal Articles

Total dose effects on heavy-ion induced gate current in MOS structure

Takahashi, Yoshihiro*; Fugane, Masaru*; Imagawa, Ryo*; Owaki, Akihiro*; Hirao, Toshio; Onoda, Shinobu; Oshima, Takeshi

JAEA-Review 2008-055, JAEA Takasaki Annual Report 2007, P. 7, 2008/11

no abstracts in English

Oral presentation

Clarification of single event effects in MOS structure devices

Takahashi, Yoshihiro*; Fugane, Masaru*; Imagawa, Ryo*; Owaki, Akihiro*; Hirao, Toshio; Onoda, Shinobu; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Heavy-ion induced currents in SOI-pn diodes

Takahashi, Yoshihiro*; Imagawa, Ryo*; Owaki, Akihiro*; Takeyasu, Hidenori*; Hirao, Toshio; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Heavy-ion induced current in SOI-pn diode

Takahashi, Yoshihiro*; Owaki, Akihiro*; Takeyasu, Hidenori*; Hirao, Toshio; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi

no journal, , 

no abstracts in English

4 (Records 1-4 displayed on this page)
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