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Search Results: Records 1-20 displayed on this page of 29

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Journal Articles

Heavy-ion induced current through an oxide layer

Takahashi, Yoshihiro*; Oki, Takahiro*; Nagasawa, Takaharu*; Nakajima, Yasuhito*; Kawanabe, Ryu*; Onishi, Kazunori*; Hirao, Toshio; Onoda, Shinobu; Mishima, Kenta; Kawano, Katsuyasu*; et al.

Nuclear Instruments and Methods in Physics Research B, 260(1), p.309 - 313, 2007/07

https://doi.org/10.1016/j.nimb.2007.02.010
 Times Cited Count：4 Percentile：35.71(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Optimization for SEU/SET immunity on 0.15 $$mu$$m fully depleted CMOS/SOI digital logic devices

Makihara, Akiko*; Asai, Hiroaki*; Tsuchiya, Yoshihisa*; Amano, Yukio*; Midorikawa, Masahiko*; Shindo, Hiroyuki*; Kuboyama, Satoshi*; Onoda, Shinobu; Hirao, Toshio; Nakajima, Yasuhito*; et al.

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.95 - 98, 2006/10

no abstracts in English

Journal Articles

Charge collected in Si MOS capacitors and SOI devices p$$^{+}$$n diodes due to heavy ion irradiation

Hirao, Toshio; Laird, J. S.; Onoda, Shinobu; Shibata, Toshihiko*; Wakasa, Takeshi; Yamakawa, Takeshi; Abe, Hiroshi; Takahashi, Yoshihiro*; Onishi, Kazunori*; Ito, Hisayoshi

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.105 - 109, 2004/10

no abstracts in English

Journal Articles

Heavy-ion induced current in MOS structure

Takahashi, Yoshihiro*; Shibata, Toshihiko*; Murase, Yuji*; Onishi, Kazunori*; Hirao, Toshio; Kamiya, Tomihiro

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.111 - 114, 2004/10

no abstracts in English

Journal Articles

Consideration to reliability of laser testing for evaluating SEU tolerance

Abe, Tetsuo*; Onishi, Kazunori*; Takahashi, Yoshihiro*; Hirao, Toshio

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.157 - 160, 2004/10

no abstracts in English

Journal Articles

Radiation-induced trapped charge in metal-nitride-oxide-semiconductor structure

Takahashi, Yoshihiro*; Onishi, Kazunori*; Fujimaki, Takeshi*; Yoshikawa, Masahito

IEEE Transactions on Nuclear Science, 46(6), p.1578 - 1585, 1999/12

https://doi.org/10.1109/23.819124
 Times Cited Count：23 Percentile：83.1(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Measurement of collected charge induced by heavy ion microbeam in SOI devices

Hirao, Toshio; *; *; Nashiyama, Isamu; Matsuda, Sumio*; Nemoto, N.*; Onishi, K.*

SDM97-194, p.57 - 63, 1998/02

no abstracts in English

Journal Articles

Effects of gamma-ray irradiation and the mechanisms on electrical characteristics of SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; *; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*

Denshi Joho Tsushin Gakkai Rombunshi, C-II, 81(1), p.140 - 150, 1998/01

https://ci.nii.ac.jp/naid/110003314895

no abstracts in English

Journal Articles

Effects of $$gamma$$-ray irradiation on the electrical characteristics of SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Takahashi, Yoshihiro*; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*

Electronics and Communication in Japan., Part2, 81(10), p.37 - 47, 1998/00

no abstracts in English

Journal Articles

Generation mechanisms of trapped charges in oxide layers of 6H-SiC MOS structures irradiated with $$gamma$$-rays

Yoshikawa, Masahito; *; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; *; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*

Mater. Sci. Forum, 264-268, p.1017 - 1020, 1998/00

no abstracts in English

Journal Articles

Radiation-induced trapped charge in metal-nitride-oxide-semiconductor structure

Takahashi, Yoshihiro*; Onishi, Kazunori*; Fujimaki, Takeshi*; Yoshikawa, Masahito

Proceedings of 3rd International Workshop on Radiation Effects on Semiconductor Devices for Space Application, p.10 - 15, 1998/00

no abstracts in English

Journal Articles

Depth profiling of oxide-trapped charges in 6H-SiC MOS structures by slant etching method

Saito, Kazunari; Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Takahashi, Yoshihiro*; Onishi, Kazunori*

JAERI-Conf 97-003, p.243 - 248, 1997/03

no abstracts in English

Journal Articles

Depth profile of trapped charges in oxide layer of 6H-SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; *; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Yoshida, Sadafumi*; Okumura, Hajime*; Takahashi, Yoshihiro*; Onishi, Kazunori*

Journal of Applied Physics, 80(1), p.282 - 287, 1996/07

https://doi.org/10.1063/1.362817
 Times Cited Count：22 Percentile：70.69(Physics, Applied)

no abstracts in English

JAEA Reports

Evaluation of number of hole-electron pairs induced by irradiation in silicon-nitride layers and analysis of charge trapping mechanisms in metal-insulator-semiconductor structure with silicon-nitride layers

Onishi, Kazunori*; Takahashi, Yoshihiro*; *; Yoshikawa, Masahito

JAERI-Research 95-090, 40 Pages, 1996/01

JAERI-Research-95-090.pdf:1.41MB

no abstracts in English

Journal Articles

Test structure for determining the charge distribution in the oxide of MOS structure

Takahashi, Yoshihiro*; Imaki, Shunsaku*; Onishi, Kazunori*; Yoshikawa, Masahito

Proceedings of IEEE 1995 International Coferece on Microelectronic Test Structures, Vol.8, p.243 - 246, 1995/03

no abstracts in English

Journal Articles

The Change of the charge distribution in the oxide layer of MOS structure with NH$$_{3}$$ annealing due to $$gamma$$-ray irradiation; Gate voltage dependence

Imaki, Shunsaku*; Takahashi, Yoshihiro*; Yoshikawa, Masahito; Onishi, Kazunori*

Heisei-7-Nendo Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Rombunshu, 0, p.151 - 152, 1995/00

no abstracts in English

Journal Articles

Evaluation of distributed charge in the insulators of MNOS structure by slanted etching method

*; *; Takahashi, Yoshihiro*; Yoshikawa, Masahito; Onishi, Kazunori*

Heisei-7-Nendo Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Rombunshu, 0, p.153 - 154, 1995/00

no abstracts in English

Journal Articles

A Slanted etching method to analyze the trapped charge distribution in the insulators of MIS structures

Onishi, Kazunori*; Takahashi, Yoshihiro*; Imaki, Shunsaku*; *; Yoshikawa, Masahito

Proc. of 21st Int. Symp. for Testing and Failure Analysis (ISTFA 95), 0, p.269 - 274, 1995/00

no abstracts in English

Journal Articles

Evaluation of the charge distribution in the oxide of MOS structure before and after $$gamma$$-ray radiation

*; *; Takahashi, Yoshihiro*; Yoshikawa, Masahito; Onishi, Kazunori*

Denshi Joho Tsushin Gakkai Gijutsu Kenkyu Hokoku, 93(172), p.23 - 27, 1993/07

no abstracts in English

Journal Articles

Thermal annealing effects on build-up of oxide trapped charge in $$gamma$$-ray irradiated 3C-SiC MOS structure

Nemoto, Norio*; Yoshikawa, Masahito; Nashiyama, Isamu; Yoshida, Sadafumi*; Onishi, Kazunori*

Heisei-5-Nendo (Dai-37-Kai) Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Koen Rombunshu; Zairyo, Bussei, p.149 - 150, 1993/00

no abstracts in English

29 (Records 1-20 displayed on this page)