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Aiko, Kazuma*; Toki, Atsushi*; Okuda, Shuichi*; Saito, Yuichi; Kamiya, Tomihiro; Nakamura, Tetsuya*; Kinoshita, Toyohiko*; Iwase, Akihiro*; Matsui, Toshiyuki*
Nuclear Instruments and Methods in Physics Research B, 314, p.99 - 102, 2013/11
Times Cited Count：4 Percentile：33.02(Instruments & Instrumentation)Imaizumi, Mitsuru*; Morioka, Chiharu*; Sumita, Taishi*; Oshima, Takeshi; Okuda, Shuichi*
Proceedings of 37th IEEE Photovoltaic Specialists Conference (PVSC-37) (CD-ROM), p.1579 - 1582, 2011/06
InGaP single-junction and InGaP/GaAs/Ge triple-junction (3J) solar cells were irradiated with low energy electrons. The energy of electrons were selected around the threshold energy of Gallium and Indium recoiling in the InGaP system (300 keV). Simultaneous electron irradiation and current-voltage characteristics measurement of the cells revealed the fact that the short-circuit current (Isc) of InGaP cells and consequently the 3J cells does not degrade when the cells are irradiated with electrons with energies of less than 300 keV, while the open-circuit voltage (Voc) considerably degrades for both types of the cell, regardless of the electron energies. This result suggests that the effects of defects generated by the recoil of phosphorus are insufficient to decrease the minority-carrier lifetime in InGaP. In addition, the degradation of the Voc suggests an increase in surface recombination.
Fumon, Takashi*; Kobayashi, Ippei*; Oshima, Takeshi; Sato, Shinichiro; Okuda, Shuichi*; Taniguchi, Ryoichi*; Iwase, Akihiro*
Proceedings of the 8th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-8), p.203 - 206, 2008/12
We developed an apparatus for electron irradiation and in-situ current-voltage (I-V) characteristics measurements for space solar cells. The apparatus was interfaced to an electron linear accelerator at Radiation Research Center of Osaka Prefecture University. By using this apparatus, the electron irradiation with the energies from 6 MeV to 12 MeV can be performed at various temperatures from -196 
C to 100 C. In-situ I-V characteristic measurements are also possible at the temperature from -196 C to 100 C. As a first demonstration using this apparatus, we performed two experiments. First, I-V characteristics of a Si solar cell were measured at room temperature and at low temperature. Secondly, the Si solar cell was irradiated with 10 MeV electrons and I-V characteristics were measured at room temperature. The experimental result was compared with those for 1 MeV electron irradiation and 10 MeV proton irradiation.
Terada, Atsuhiko; Iwatsuki, Jin; Ishikura, Shuichi; Noguchi, Hiroki; Kubo, Shinji; Okuda, Hiroyuki; Kasahara, Seiji; Tanaka, Nobuyuki; Ota, Hiroyuki*; Onuki, Kaoru; et al.
Journal of Nuclear Science and Technology, 44(3), p.477 - 482, 2007/03
Times Cited Count：44 Percentile：93.13(Nuclear Science & Technology)Japan Atomic Energy Agency (JAEA) has been conducting study on thermochemical IS process for hydrogen production. A pilot test of IS process is under planning that covers four R&D subjects: (1) construction of a pilot test plant made of industrial materials and completion of hydrogen production test using electrically-heated helium gas as the process heat supplier, (2) development of analytical code system, (3) component tests to assist the hydrogen production test and also to improve the process performance for the commercial plant, (4) design of HTTR-IS system. Development of innovative chemical reactors is in progress, which are equipped with ceramic heat exchanger. In design of the IS plant, it is important to establish the system for "design by analysis". Therefore, we have developed a multi-phase flow analysis code that can analyze systems in which chemical reactions occur
Takahashi, Toshiharu*; Minehara, Eisuke; Hajima, Ryoichi; Nishimori, Nobuyuki; Sawamura, Masaru; Nagai, Ryoji; Kikuzawa, Nobuhiro; Iijima, Hokuto; Nishitani, Tomohiro; Okuda, Shuichi*
Proceedings of 3rd Annual Meeting of Particle Accelerator Society of Japan and 31st Linear Accelerator Meeting in Japan (CD-ROM), p.523 - 525, 2006/00
no abstracts in English
Takahashi, Toshiharu*; Minehara, Eisuke; Hajima, Ryoichi; Sawamura, Masaru; Nagai, Ryoji; Kikuzawa, Nobuhiro; Iijima, Hokuto; Nishitani, Tomohiro; Okuda, Shuichi*
Proceedings of 2nd Annual Meeting of Particle Accelerator Society of Japan and 30th Linear Accelerator Meeting in Japan, p.498 - 500, 2005/07
no abstracts in English
Hajima, Ryoichi; Minehara, Eisuke; Sawamura, Masaru; Nagai, Ryoji; Kikuzawa, Nobuhiro; Iijima, Hokuto; Nishitani, Tomohiro; Takahashi, Toshiharu*; Okuda, Shuichi*
Proceedings of 27th International Free Electron Laser Conference (FEL 2005) (CD-ROM), p.301 - 304, 2005/00
no abstracts in English
Cu
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single crystalIshida, Takekazu*; Kawamata, Shuichi*; Okuda, Kiichi*; Asaoka, Hidehito; ; Noda, Kenji; *
Advances in Superconductivity VIII, 0, p.189 - 192, 1996/00
no abstracts in English
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Proc. of the 20th Linear Accelerator Meeting in Japan, 0, p.239 - 241, 1995/00
no abstracts in English
Hajima, Ryoichi; Takahashi, Toshiharu*; Nagai, Ryoji; Sawamura, Masaru; Kikuzawa, Nobuhiro; Nishimori, Nobuyuki; Iijima, Hokuto; Nishitani, Tomohiro; Okuda, Shuichi*; Minehara, Eisuke
no journal, ,
no abstracts in English
Imaizumi, Mitsuru*; Morioka, Chiharu*; Sumita, Taishi*; Oshima, Takeshi; Okuda, Shuichi*
no journal, ,
no abstracts in English
