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Journal Articles

Level structures of $$^{56,58}$$Ca cast doubt on a doubly magic $$^{60}$$Ca

Chen, S.*; Browne, F.*; Doornenbal, P.*; Lee, J.*; Obertelli, A.*; Tsunoda, Yusuke*; Otsuka, Takaharu*; Chazono, Yoshiki*; Hagen, G.*; Holt, J. D.*; et al.

Physics Letters B, 843, p.138025_1 - 138025_7, 2023/08

https://doi.org/10.1016/j.physletb.2023.138025
 Times Cited Count：1 Percentile：64.66(Astronomy & Astrophysics)

Gamma decays were observed in $$^{56}$$Ca and $$^{58}$$Ca following quasi-free one-proton knockout reactions from $$^{57,59}$$Sc. For $$^{56}$$Ca, a $$gamma$$ ray transition was measured to be 1456(12) keV, while for $$^{58}$$Ca an indication for a transition was observed at 1115(34) keV. Both transitions were tentatively assigned as the $$2^{+}_{1} rightarrow 0^{+}_{gs}$$ decays. A shell-model calculation in a wide model space with a marginally modified effective nucleon-nucleon interaction depicts excellent agreement with experiment for $$2^{+}_{1}$$ level energies, two-neutron separation energies, and reaction cross sections, corroborating the formation of a new nuclear shell above the N = 34 shell. Its constituents, the $$0_{f5/2}$$ and $$0_{g9/2}$$ orbitals, are almost degenerate. This degeneracy precludes the possibility for a doubly magic $$^{60}$$Ca and potentially drives the dripline of Ca isotopes to $$^{70}$$Ca or even beyond.

Journal Articles

Formation of high-quality SiO$$_{2}$$/GaN interfaces with suppressed Ga-oxide interlayer via sputter deposition of SiO$$_{2}$$

Onishi, Kentaro*; Kobayashi, Takuma*; Mizobata, Hidetoshi*; Nozaki, Mikito*; Yoshigoe, Akitaka; Shimura, Takayoshi*; Watanabe, Heiji*

Japanese Journal of Applied Physics, 62(5), p.050903_1 - 050903_4, 2023/05

https://doi.org/10.35848/1347-4065/acd1ca
 Times Cited Count：2 Percentile：71.03(Physics, Applied)

While the formation of an GaO$$_{x}$$ interlayer is key to achieving SiO$$_{2}$$/GaN interfaces with low defect density, it can affect the reliability and stability of metal-oxide-semiconductor (MOS) devices if the annealing conditions are not properly designed. In the present study, we aimed to minimize the growth of the GaO$$_{x}$$ layer on the basis of the sputter deposition of SiO$$_{2}$$ on GaN. Synchrotron radiation X-ray photoelectron spectrometry measurements confirmed the suppressed growth of the GaO$$_{x}$$ layer compared with a SiO$$_{2}$$/GaN structure formed by plasma-enhanced chemical vapor deposition. Negligible GaO$$_{x}$$ growth was also observed when subsequent oxygen annealing up to 600$$^{circ}$$C was performed. A MOS device with negligible capacitance-voltage hysteresis, nearly ideal flat-band voltage, and low leakage current was demonstrated by performing oxygen and forming gas annealing at temperatures of 600$$^{circ}$$C and 400$$^{circ}$$C, respectively.

Journal Articles

"Southwestern" boundary of the $$N = 40$$ island of inversion; First study of low-lying bound excited states in $$^{59}$$V and $$^{61}$$V

Elekes, Z.*; Juh$'a$sz, M. M.*; Sohler, D.*; Sieja, K.*; Yoshida, Kazuki; Ogata, Kazuyuki*; Doornenbal, P.*; Obertelli, A.*; Achouri, N. L.*; Baba, Hidetada*; et al.

Physical Review C, 106(6), p.064321_1 - 064321_10, 2022/12

https://doi.org/10.1103/PhysRevC.106.064321
 Times Cited Count：2 Percentile：49.92(Physics, Nuclear)

The low-lying level structure of $$^{59}$$V and $$^{61}$$V was investigated for the first time. The neutron knockout reaction and inelastic proton scattering were applied for $$^{61}$$V while the neutron knock-out reaction provided the data for $$^{59}$$V. Four and five new transitions were determined for $$^{59}$$V and $$^{61}$$V, respectively. Based on the comparison to our shell-model calculations using the Lenzi-Nowacki-Poves-Sieja (LNPS) interaction, three of the observed $$gamma$$ rays for each isotope could be placed in the level scheme and assigned to the decay of the first 11/2$$^{-}$$ and 9/2$$^{-}$$ levels. The ($$p$$,$$p'$$) excitation cross sections for $$^{61}$$V were analyzed by the coupled-channels formalism assuming quadrupole plus hexadecapole deformations. Due to the role of the hexadecapole deformation, $$^{61}$$V could not be unambiguously placed on the island of inversion.

Journal Articles

Electrical properties and energy band alignment of SiO$$_{2}$$/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN(000$$bar{1}$$) substrates

Mizobata, Hidetoshi*; Tomigahara, Kazuki*; Nozaki, Mikito*; Kobayashi, Takuma*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Letters, 121(6), p.062104_1 - 062104_6, 2022/08

https://doi.org/10.1063/5.0095468
 Times Cited Count：1 Percentile：15.88(Physics, Applied)

The interface properties and energy band alignment of SiO$$_{2}$$/GaN metal-oxide-semiconductor (MOS) structures fabricated on N-polar GaN(000$$bar{1}$$) substrates were investigated by electrical measurements and synchrotron-radiation X-ray photoelectron spectroscopy. They were then compared with those of SiO$$_{2}$$/GaN MOS structures on Ga-polar GaN(0001). Although the SiO$$_{2}$$/GaN(000$$bar{1}$$) structure was found to be more thermally unstable than that on the GaN(0001) substrate, excellent electrical properties were obtained for the SiO$$_{2}$$/GaN(000$$bar{1}$$) structure by optimizing conditions for post-deposition annealing. However, the conduction band offset for SiO$$_{2}$$/GaN(000$$bar{1}$$) was smaller than that for SiO$$_{2}$$/GaN(0001), leading to increased gate leakage current. Therefore, caution is needed when using N-polar GaN(000$$bar{1}$$) substrates for MOS device fabrication.

Journal Articles

Comprehensive physical and electrical characterizations of NO nitrided SiO$$_{2}$$/4H-SiC(11$$overline{2}$$0) interfaces

Nakanuma, Takato*; Iwakata, Yu*; Watanabe, Arisa*; Hosoi, Takuji*; Kobayashi, Takuma*; Sometani, Mitsuru*; Okamoto, Mitsuo*; Yoshigoe, Akitaka; Shimura, Takayoshi*; Watanabe, Heiji*

Japanese Journal of Applied Physics, 61(SC), p.SC1065_1 - SC1065_8, 2022/05

https://doi.org/10.35848/1347-4065/ac4685
 Times Cited Count：8 Percentile：75.56(Physics, Applied)

Nitridation of SiO$$_{2}$$/4H-SiC(11$$overline{2}$$0) interfaces with post-oxidation annealing in an NO ambient (NO-POA) and its impact on the electrical properties were investigated. Sub-nm-resolution nitrogen depth profiling at the interfaces was conducted by using a scanning X-ray photoelectron spectroscopy microprobe. The results showed that nitrogen atoms were incorporated just at the interface and that interface nitridation proceeded much faster than at SiO$$_{2}$$/SiC(0001) interfaces, resulting in a 2.3 times higher nitrogen concentration. Electrical characterizations of metal-oxide-semiconductor capacitors were conducted through capacitance-voltage ($$C-V$$) measurements in the dark and under illumination with ultraviolet light to evaluate the electrical defects near the conduction and valence band edges and those causing hysteresis and shifting of the $$C-V$$ curves. While all of these defects were passivated with the progress of the interface nitridation, excessive nitridation resulted in degradation of the MOS capacitors. The optimal conditions for NO-POA are discussed on the basis of these experimental findings.

Journal Articles

Impact of nitridation on the reliability of 4H-SiC(11$$bar{2}$$0) MOS devices

Nakanuma, Takato*; Kobayashi, Takuma*; Hosoi, Takuji*; Sometani, Mitsuru*; Okamoto, Mitsuo*; Yoshigoe, Akitaka; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Express, 15(4), p.041002_1 - 041002_4, 2022/04

https://doi.org/10.35848/1882-0786/ac5ace
 Times Cited Count：6 Percentile：64.66(Physics, Applied)

The leakage current and flat-band voltage (VFB) instability of NO-nitrided SiC (11$$bar{2}$$0) (a-face) MOS devices were systematically investigated. Although NO nitridation is effective in improving the interface properties, we found that it reduces the onset field of Fowler-Nordheim (F-N) current by about 1 MVcm$$^{-1}$$, leading to pronounced leakage current. Synchrotron X-ray photoelectron spectroscopy revealed that the nitridation reduces the conduction band offset at the SiO$$_{2}$$/SiC interface, corroborating the above finding. Furthermore, systematical positive and negative bias stress tests clearly indicated the VFB instability of nitrided a-face MOS devices against electron and hole injection.

Journal Articles

A First glimpse at the shell structure beyond $$^{54}$$Ca; Spectroscopy of $$^{55}$$K, $$^{55}$$Ca, and $$^{57}$$Ca

Koiwai, Takuma*; Wimmer, K.*; Doornenbal, P.*; Obertelli, A.*; Barbieri, C.*; Duguet, T.*; Holt, J. D.*; Miyagi, Takayuki*; Navr$'a$til, P.*; Ogata, Kazuyuki*; et al.

Physics Letters B, 827, p.136953_1 - 136953_7, 2022/04

https://doi.org/10.1016/j.physletb.2022.136953
 Times Cited Count：4 Percentile：74.12(Astronomy & Astrophysics)

no abstracts in English

Journal Articles

Investigation of the ground-state spin inversion in the neutron-rich $$^{47,49}$$Cl isotopes

Linh, B. D.*; Corsi, A.*; Gillibert, A.*; Obertelli, A.*; Doornenbal, P.*; Barbieri, C.*; Chen, S.*; Chung, L. X.*; Duguet, T.*; G$'o$mez-Ramos, M.*; et al.

Physical Review C, 104(4), p.044331_1 - 044331_16, 2021/10

AA2021-0468.pdf:1.29MB

https://doi.org/10.1103/PhysRevC.104.044331
 Times Cited Count：6 Percentile：63.69(Physics, Nuclear)

no abstracts in English

Journal Articles

Pairing forces govern population of doubly magic $$^{54}$$Ca from direct reactions

Browne, F.*; Chen, S.*; Doornenbal, P.*; Obertelli, A.*; Ogata, Kazuyuki*; Utsuno, Yutaka; Yoshida, Kazuki; Achouri, N. L.*; Baba, Hidetada*; Calvet, D.*; et al.

Physical Review Letters, 126(25), p.252501_1 - 252501_7, 2021/06

https://doi.org/10.1103/PhysRevLett.126.252501
 Times Cited Count：10 Percentile：74.2(Physics, Multidisciplinary)

Direct proton-knockout reactions of $$^{55}$$Sc were studied at the RIKEN Radioactive Isotope Beam Factory. Populated states of $$^{54}$$Ca were investigated through $$gamma$$-ray and invariant-mass spectroscopy. Level energies were calculated from the nuclear shell model employing a phenomenological inter-nucleon interaction. Theoretical cross sections to states were calculated from distorted-wave impulse approximation estimates multiplied by the shell model spectroscopic factors. Despite the calculations showing a significant amplitude of excited neutron configurations in the ground-state of $$^{55}$$Sc, valence proton removals populated predominantly the ground-state of $$^{54}$$Ca. This counter-intuitive result is attributed to pairing effects leading to a dominance of the ground-state spectroscopic factor. Owing to the ubiquity of the pairing interaction, this argument should be generally applicable to direct knockout reactions from odd-even to even-even nuclei.

Journal Articles

First spectroscopic study of $$^{51}$$Ar by the ($$p$$,2$$p$$) reaction

Juh$'a$sz, M. M.*; Elekes, Z.*; Sohler, D.*; Utsuno, Yutaka; Yoshida, Kazuki; Otsuka, Takaharu*; Ogata, Kazuyuki*; Doornenbal, P.*; Obertelli, A.*; Baba, Hidetada*; et al.

Physics Letters B, 814, p.136108_1 - 136108_8, 2021/03

AA2020-0747.pdf:0.83MB

https://doi.org/10.1016/j.physletb.2021.136108
 Times Cited Count：5 Percentile：63.69(Astronomy & Astrophysics)

The nuclear structure of $$^{51}$$Ar was studied by the ($$p$$,2$$p$$) reaction using $$gamma$$-ray spectroscopy for the bound and unbound states. Comparing the results to our shell-model calculations, two bound and six unbound states were established. The low cross sections populating the two bound states of $$^{51}$$Ar could be interpreted as a clear signature for the presence of significant sub-shell closures at neutron numbers 32 and 34 in argon isotopes.

Journal Articles

$$N$$ = 32 shell closure below calcium; Low-lying structure of $$^{50}$$Ar

Cort$'e$s, M. L.*; Rodriguez, W.*; Doornenbal, P.*; Obertelli, A.*; Holt, J. D.*; Men$'e$ndez, J.*; Ogata, Kazuyuki*; Schwenk, A.*; Shimizu, Noritaka*; Simonis, J.*; et al.

Physical Review C, 102(6), p.064320_1 - 064320_9, 2020/12

AA2020-0748.pdf:0.75MB

https://doi.org/10.1103/PhysRevC.102.064320
 Times Cited Count：11 Percentile：78.75(Physics, Nuclear)

Low-lying excited states in the $$N$$ = 32 isotope $$^{50}$$Ar were investigated by in-beam $$gamma$$-ray spectroscopy following proton- and neutron-knockout, multinucleon removal, and proton inelastic scattering at the RIKEN Radioactive Isotope Beam Factory. The energies of the two previously reported transitions have been confirmed, and five additional states are presented for the first time, including a candidate for a 3$$^{-}$$ state. The level scheme built using $$gamma$$ $$gamma$$ coincidences was compared to shell-model calculations in the $$sd-pf$$ model space and to ${it ab initio}$ predictions based on chiral two- and three-nucleon interactions. Theoretical proton- and neutron-knockout cross sections suggest that two of the new transitions correspond to 2$$^{+}$$ states, while the previously proposed 4$$^{+}_{1}$$ state could also correspond to a 2$$^{+}$$ state.

Journal Articles

Shell evolution of $$N$$ = 40 isotones towards $$^{60}$$Ca; First spectroscopy of $$^{62}$$Ti

Cort$'e$s, M. L.*; Rodriguez, W.*; Doornenbal, P.*; Obertelli, A.*; Holt, J. D.*; Lenzi, S. M.*; Men$'e$ndez, J.*; Nowacki, F.*; Ogata, Kazuyuki*; Poves, A.*; et al.

Physics Letters B, 800, p.135071_1 - 135071_7, 2020/01

https://doi.org/10.1016/j.physletb.2019.135071
 Times Cited Count：31 Percentile：96.48(Astronomy & Astrophysics)

Excited states in the $$N$$ = 40 isotone $$^{62}$$Ti were populated via the $$^{63}$$V($$p$$,$$2p$$)$$^{62}$$Ti reaction at $$sim$$200 MeV/nucleon at the Radioactive Isotope Beam Factory and studied using $$gamma$$-ray spectroscopy. The energies of the $$2_1^+ rightarrow 0_{rm gs}^+$$ and $$4_1^+ rightarrow 2_1^+$$ transitions, observed here for the first time, indicate a deformed Ti ground state. These energies are increased compared to the neighboring $$^{64}$$Cr and $$^{66}$$Fe isotones, suggesting a small decrease of quadrupole collectivity. The present measurement is well reproduced by large-scale shell-model calculations based on effective interactions, while ab initio and beyond mean-field calculations do not yet reproduce our findings.

Journal Articles

Quasifree neutron knockout from $$^{54}$$Ca corroborates arising $$N=34$$ neutron magic number

Chen, S.*; Lee, J.*; Doornenbal, P.*; Obertelli, A.*; Barbieri, C.*; Chazono, Yoshiki*; Navr$'a$til, P.*; Ogata, Kazuyuki*; Otsuka, Takaharu*; Raimondi, F.*; et al.

Physical Review Letters, 123(14), p.142501_1 - 142501_7, 2019/10

AA2019-0306.pdf:0.57MB

https://doi.org/10.1103/PhysRevLett.123.142501
 Times Cited Count：49 Percentile：92.61(Physics, Multidisciplinary)

no abstracts in English

Journal Articles

Development of a high power wideband polarizer for electron cyclotron current drive system in JT-60SA

Saigusa, Mikio*; Oyama, Gaku*; Matsubara, Fumiaki*; Takii, Keita*; Sai, Takuma*; Kobayashi, Takayuki; Moriyama, Shinichi

Fusion Engineering and Design, 96-97, p.577 - 582, 2015/10

https://doi.org/10.1016/j.fusengdes.2015.04.013
 Times Cited Count：6 Percentile：45.66(Nuclear Science & Technology)

A wideband polarizer has been developed for an ECCD system in JT-60SA. The groove depth of the mirrors installed in miter bends were optimized for two frequencies (110 GHz and 138 GHz) by numerical simulations. All surfaces of Poincare spheres were covered at both of the frequencies in low power test. The thermal stress of polarizer were estimated by the numerical simulations. The twister polarizer has been tested up to 0.24 MW during 3 s at 110 GHz.

Oral presentation

Research and development of wide band polarizer for high power millimeter waves

Sai, Takuma*; Matsubara, Fumiaki*; Takii, Keita*; Oyama, Gaku*; Saigusa, Mikio*; Kobayashi, Takayuki; Moriyama, Shinichi

no journal, , 

no abstracts in English

Oral presentation

Research and development of wide band polarizer for high power millimeter wave

Sai, Takuma*; Matsubara, Fumiaki*; Ishida, Yoshitaka*; Saigusa, Mikio*; Kobayashi, Takayuki; Moriyama, Shinichi

no journal, , 

A wideband polarizer were developed for an electron cyclotron current driving system in JT-60SA. The wideband polarizer consists of a twister and a circular polarizers. The polarization properties of the twister was confirmed in cold tests. A high power test of the twister was carried out at an input power of 0.25 MW, 3 s at a frequency of 110 GHz. A new polarizer was designed for next high power tests. The circular polarizer of the different groove period was simulated by numerical simulations using a FDTD method.

Oral presentation

Progress in development of a wide band polarizer for ECCD system in JT-60SA

Horie, Naoyuki*; Sai, Takuma*; Omori, Kohei*; Saigusa, Mikio*; Kobayashi, Takayuki; Moriyama, Shinichi; Arata, Hiroshi*; Uno, Tsuyoshi*

no journal, , 

no abstracts in English

Oral presentation

Reliability issues in Nitrided SiC MOS devices

Kobayashi, Takuma*; Nakanuma, Takato*; Suzuki, Asato*; Sometani, Mitsuru*; Okamoto, Mitsuo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

no journal, , 

We investigated the reliability of nitrided SiC MOS devices in terms of oxide leakage and flatband voltage stability. Although nitrided MOS devices on non-basal planes are known to have superior on-state performances, we found that the nitridation not only leads to pronounced oxide leakage but also hampers the flatband voltage stability in response to electron and hole injection. In the presentation, we will show how the nitridation modifies the MOS interfaces based on the results of synchrotron radiation X-ray photoelectron spectroscopy and discuss the possible cause of reliability degradation.

Oral presentation

Nitridation-induced degradation of SiC (1-100) MOS devices

Kobayashi, Takuma*; Nakanuma, Takato*; Suzuki, Asato*; Sometani, Mitsuru*; Okamoto, Mitsuo*; Yoshigoe, Akitaka; Shimura, Takayoshi*; Watanabe, Heiji*

no journal, , 

Together with a standard NO nitridation, a high channel mobility ($$sim$$ 100 cm$$^{2}$$V$$^{-1}$$s$$^{-1}$$) is obtained for SiC MOSFETs fabricated on non-basal planes, such as (1-100) m-face. Since these planes appear on the side wall of trench formed on (0001) Si-face, they can be directly applied to trench MOSFETs which have low on-resistance. Despite their advantages, the characteristics of MOS devices on non-basal planes, including the impact of nitridation, is not well investigated. In this work, we focused on SiC MOS devices on m-face and studied their physical and electrical characteristics in detail.

Oral presentation

Improvement of interface and insulating properties of sputter-deposited SiO$$_{2}$$/GaN MOS structures by oxygen and hydrogen annealing

Onishi, Kentaro*; Kobayashi, Takuma*; Mizobata, Hidetoshi*; Nozaki, Mikito*; Yoshigoe, Akitaka; Shimura, Takayoshi*; Watanabe, Heiji*

no journal, , 

GaO$$_{x}$$ interlayer at SiO$$_{2}$$/GaN interfaces is easily reduced during the annealing process, leading to threshold voltage instability of MOS devices. In this study, we formed SiO$$_{2}$$ by sputter deposition to minimize the growth of unstable GaO$$_{x}$$ interlayer. Furthermore, by performing oxygen and hydrogen annealing, a stable GaN MOS structure with good interface and insulating properties was realized.

21 (Records 1-20 displayed on this page)