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Oshima, Takeshi; Deki, Manato; Makino, Takahiro; Iwamoto, Naoya; Onoda, Shinobu; Hirao, Toshio*; Kojima, Kazutoshi*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*
AIP Conference Proceedings 1525, p.654 - 658, 2013/04
Times Cited Count：0 Percentile：0.05(Physics, Applied)Metal-Oxide-Semiconductor (MOS) capacitors were fabricated on n-type 4H-SiC epitaxial layers, and the leakage current through the gate oxide during heavy ion irradiation was investigated in order to evaluate dielectric breakdown induced by heavy ions (Single Event Gate Rupture: SEGR). The gate oxide at thickness ranges between 60 and 80 nm was formed using pyrogenic oxidation at 1100 
C for 60 min. Circular electrodes with 180 
diameter were formed using Al evaporation and a lift-off technique. The leakage current observed through the gate oxide was monitored during 18 MeV oxygen (O) or nickel (Ni) ions. As a result, although no significant difference in the value of the electric field at the dielectric breakdown (around 8.2 MV/cm) was observed between non-irradiated and 18 MeV-O irradiated samples, the value decreased to be 7.3 MV/cm in the case of 18 MeV-Ni ion incidence. The Linier Energy Transfer (LET) for 18 MeV-O is 7 MeV cm
/mg, and this value is smaller than that for 18 MeV-Ni (24 MeV cm/mg). Also, 18 MeV-Ni ions deposit energy in narrower regions than 18 MeV-O ions. Thus, it can be concluded that the high density of charge induced by 18 MeV-Ni ions triggers SEGR in SiC MOS capacitors.
Onoda, Shinobu; Makino, Takahiro; Ono, Shuichi*; Katakami, Shuji*; Arai, Manabu*; Oshima, Takeshi
IEEE Transactions on Nuclear Science, 59(4), p.742 - 748, 2012/08
Times Cited Count：4 Percentile：31.8(Engineering, Electrical & Electronic)no abstracts in English
Ito, Takuto*; Deki, Manato; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi
Proceedings of 12th International Symposium on Laser Precision Microfabrication (LPM 2011) (Internet), 5 Pages, 2011/06
Deki, Manato; Ito, Takuto*; Yamamoto, Minoru*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi
Applied Physics Letters, 98(13), p.133104_1 - 133104_3, 2011/03
Times Cited Count：13 Percentile：49.06(Physics, Applied)Deki, Manato; Ito, Takuto*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi
Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.218 - 221, 2010/10
Tomita, Takuro*; Iwami, Masahiro*; Yamamoto, Minoru*; Deki, Manato*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Nakagawa, Yoshinori*; Kitada, Takahiro*; Isu, Toshiro*; Saito, Shingo*; et al.
Materials Science Forum, 645-648, p.239 - 242, 2010/04
no abstracts in English
Onoda, Shinobu; Iwamoto, Naoya; Ono, Shuichi*; Katakami, Shuji*; Arai, Manabu*; Kawano, Katsuyasu*; Oshima, Takeshi
IEEE Transactions on Nuclear Science, 56(6), p.3218 - 3222, 2009/12
Times Cited Count：18 Percentile：74.57(Engineering, Electrical & Electronic)no abstracts in English
Kaji, Yoshiyuki; Tsukada, Takashi; Fujita, Mitsutane*; Kinugawa, Junichi*; Yoshida, Kenji*; Mashiko, Shinichi*; Onose, Shoji*; Iwata, Shuichi*
2003-Nen Johogaku Shimpojiumu Koen Rombunshu, p.89 - 92, 2003/01
The distributed material database system named 'Data-Free-Way' has been developed by four organizations (the National Institute for Materials Science, the Japan Atomic Energy Research Institute, the Japan Nuclear Cycle Development Institute, and the Japan Science and Technology Corporation) under a cooperative agreement. In order to create additional values of the system, knowledge base system, in which knowledge extracted from the material database is expressed, is planned to be developed for more effective utilization of Data-Free-Way. XML (eXtensible Markup Language) has been adopted as the description method of the retrieved results and the meaning of them. This paper will describe the description method of knowledge extracted from the material database with XML and the distributed material knowledge base system.
Ouchi, Nobuo; Mizumoto, Motoharu; Kusano, Joichi; Chishiro, Etsuji; Hasegawa, Kazuo; Akaoka, Nobuo*; Saito, Kenji*; Noguchi, Shuichi*; Kako, Eiji*; Inoue, Hitoshi*; et al.
Proceedings of 20th International Linac Conference (CD-ROM), 1 Pages, 2000/00
no abstracts in English
Ouchi, Nobuo; Kusano, Joichi; Akaoka, Nobuo*; B.Fechner*; Hasegawa, Kazuo; Takeuchi, Suehiro; Mizumoto, Motoharu; Saito, Kenji*; Noguchi, Shuichi*; *; et al.
Proc. of 1st Asian Particle Accelerator Conf. (APAC98), p.77 - 79, 1998/11
no abstracts in English
Ouchi, Nobuo; Kusano, Joichi; Akaoka, Nobuo*; Takeuchi, Suehiro; Hasegawa, Kazuo; Mizumoto, Motoharu; Inoue, Hitoshi*; *; Noguchi, Shuichi*; *; et al.
Development of Large Scale Superconducting Radio Frequency (SRF) Technologies, p.50 - 55, 1998/00
no abstracts in English
Akaoka, Nobuo*; Kusano, Joichi; Ouchi, Nobuo; Mizumoto, Motoharu; Takeda, O.*; Noguchi, Shuichi*; Saito, Kenji*; *; *; *
Proceedings of 23rd Linear Accelerator Meeting in Japan, p.289 - 291, 1998/00
no abstracts in English
Kusano, Joichi; Ouchi, Nobuo; Akaoka, Nobuo*; Tomisawa, Tetsuo; Takeuchi, Suehiro; Mizumoto, Motoharu; Noguchi, Shuichi*; Saito, Kenji*; Inoue, Hitoshi*; *; et al.
Proceedings of 23rd Linear Accelerator Meeting in Japan, p.124 - 126, 1998/00
no abstracts in English
Ouchi, Nobuo; Kusano, Joichi; Noguchi, Shuichi*; Saito, Kenji*; Inoue, Hitoshi*; *; *; Mizumoto, Motoharu; B.Fechner*; Mukugi, Ken*; et al.
Proc. of 22nd Linear Accelerator Meeting in Japan, p.167 - 169, 1997/00
no abstracts in English
Ouchi, Nobuo; Kusano, Joichi; Akaoka, Nobuo*; Takeuchi, Suehiro; B.Fechner*; Hasegawa, Kazuo; Mizumoto, Motoharu; Inoue, Hitoshi*; *; Noguchi, Shuichi*; et al.
Proc. of 8th Workshop on RF Superconductivity, 1, p.22 - 26, 1997/00
no abstracts in English
Ouchi, Nobuo; Kusano, Joichi; Akaoka, Nobuo*; Takeuchi, Suehiro; B.Fechner*; Hasegawa, Kazuo; Mizumoto, Motoharu; Inoue, Hitoshi*; *; Noguchi, Shuichi*; et al.
Proc. of 8th Workshop on RF Superconductivity, 1, p.12 - 21, 1997/00
no abstracts in English
Bi
Ba
CuO
*; *; Katano, Susumu; *; *; *; *
Physica C, 263(1-4), p.298 - 301, 1996/00
Times Cited Count：4 Percentile：29.07(Physics, Applied)no abstracts in English
-ray irradiation effects on the I-V characteristics of 4H-SiC MESFETOnoda, Shinobu; Iwamoto, Naoya; Ono, Shuichi*; Katakami, Shuji*; Arai, Manabu*; Kawano, Katsuyasu*; Oshima, Takeshi
no journal, ,
no abstracts in English
Deki, Manato*; Ito, Takuto*; Yamamoto, Minoru*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi
no journal, ,
no abstracts in English
Deki, Manato; Yamamoto, Minoru*; Ito, Takuto*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi
no journal, ,
no abstracts in English
