Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Yamada, Ryohei; Odagiri, Taiki*; Iwaoka, Kazuki*; Hosoda, Masahiro*; Tokonami, Shinji*
Radiation Environment and Medicine, 8(1), p.21 - 25, 2019/02
We evaluate radon/thoron and its progeny concentration using passive-type monitors using CR-39 plates. After exposure, it is necessary to do chemical etching for CR-39 plates. In the present study, we considered shortening of chemical etching time for CR-39 and enlargement of the track diameter (i.e. etch pit diameter) aiming for introduction of automatic counting system in the future. Optimum conditions were determined by changing solution concentration, solution temperature and etching time. As a result, the optimized conditions (concentration, temperature and etching time) were determined to be 8 M NaOH solution, 75 degrees Celsius and 10 hours. This result of etching time showed that the chemical etching was completed in less than half of conventional etching time. Furthermore, it was suggested that shorter etching time would be possible if we do not consider the enlargement of conventional track diameter.
/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistorsWatanabe, Kenta*; Terashima, Daiki*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Ishida, Masahiro*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; et al.
Japanese Journal of Applied Physics, 57(6S3), p.06KA03_1 - 06KA03_6, 2018/06
Times Cited Count：10 Percentile：45.49(Physics, Applied)The advantage of SiO/AlON stacked gate dielectrics over SiO, AlON and AlO
single dielectric layers was demonstrated. Our systematic research revealed that the optimized stacked structure with 3.3-nm-thick AlON interlayer is beneficial in terms of superior interface quality, reduced gate leakage current and C-V hysteresis for next-generation high frequency and high power AlGaN/GaN MOS-HFETs.
Shimizu, Kenichi*; Koike, Yuki*; Yamada, Taiki*; Oharada, Kazuya*; Tanaka, Keisuke*; Shobu, Takahisa
Zairyo, 65(9), p.657 - 664, 2016/09
The internal stress in crystalline thermoplastics, polyphenylene sulphide (PPS), reinforced by carbon fibers of 30 mass% was measured by the diffraction method using synchrotron with energy of 12.3 keV. The stress in the matrix was determined by the sin2psi method with side-inclination optics of transmitted X-ray diffractions. Using skin-layer strips cut parallel, perpendicular and 45 degree to the molding direction of the injection molded plates, the matrix stress was measured under the uniaxial applied stress. The experimental values were at least qualitatively agreed with the prediction derived based on micromechanics. The quantitative difference between experiment and prediction is mainly due to the neglect of the distribution of fiber orientations in the micromechanics prediction. These residual stresses were caused by the mismatch of the thermal expansion coefficient between matrix and fibers.
/AlGaN interface property deposited by PECVDTerashima, Daiki*; Watanabe, Kenta*; Yamada, Takahiro*; Nozaki, Mikito*; Shih, H.*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; et al.
no journal, ,
Impact of input power and substrate temperature of SiO deposition by plasma-enhanced CVD on SiO/AlGaN interface was investigated by means of electrical characterization of MOS capacitors. Synchrotron radiation photoemission spectroscopy revealed that Ga oxide component on AlGaN surface increases with increasing input power of PECVD. MOS capacitors with SiO gate insulator deposited at low input power shows relatively better SiO/AlGaN interface quality, despite degraded interface quality for the sample with SiO deposited at high input power. These results suggest that AlGaN surface oxidation during oxide deposition should be controlled to obtain good interface property.
/AlON stacked gate dielectrics for AlGaN/GaN MOS-HFETWatanabe, Kenta*; Terashima, Daiki*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Ishida, Masahiro*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; et al.
no journal, ,
The advantage of SiO/AlON stacked gate dielectrics over SiO, AlON and AlO single dielectric layers was demonstrated. Our systematic research revealed that the optimized stacked structure with 3.3-nm-thick AlON interlayer is beneficial in terms of superior interface quality, reduced gate leakage current and C-V hysteresis for next-generation high frequency and high power AlGaN/GaN MOS-HFETs.
Yoneda, Yasuhiro; Yamada, Hiroki*
no journal, ,
In addition to research on structural analysis using binary correlation distribution functions using synchrotron radiation, the diffractometer at SPring-8, a large synchrotron radiation facility, will be introduced. A feature of the atomic pair-distribution function (PDF) is that it can cover not only the local structure region but also the middle-range structure of the nanoscale order. As an example of applying PDF analysis to ferroelectrics, the results of local structural analysis of BiFeO
-BaTiO-Bi (Mg
Ti)O (BF-BT-BMT) are shown. When fitted with the cubic crystal structure of the average structure, a large difference occurs at 40 
or less, revealing the existence of lattice strain, which is the mechanism of polarization.
