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Journal Articles

True coincidence summing correction for cylindrical volume samples in $$gamma$$-ray spectrometry

Yamada, Takashi*; Asai, Masato; Yonezawa, Chushiro*; Kakita, Kazutoshi*; Hirai, Shoji*

Radioisotopes, 69(9), p.287 - 297, 2020/09

https://doi.org/10.3769/radioisotopes.69.287

We have confirmed that the commercially available Japanese "standard" gamma-ray analysis programs do not consider the effect of sample volume in calculating true coincidence summing (TCS) corrections, which results in underestimation of $$^{134}$$Cs radioactivity in cylindrical volume samples. In this work, we have developed and examined a practical TCS correction method for general Ge detectors which consider the effect of sample volume properly, and have confirmed that this method can reduce the $$^{134}$$Cs radioactivity underestimation to less than 1%.

Journal Articles

X-ray photoelectron and X-ray absorption spectroscopic study on $$beta$$-FeSi$$_{2}$$ thin films fabricated by ion beam sputter deposition

Esaka, Fumitaka; Yamamoto, Hiroyuki; Matsubayashi, Nobuyuki*; Yamada, Yoichi*; Sasase, Masato*; Yamaguchi, Kenji; Shamoto, Shinichi; Magara, Masaaki; Kimura, Takaumi

Applied Surface Science, 256(10), p.3155 - 3159, 2010/03

https://doi.org/10.1016/j.apsusc.2009.11.090
 Times Cited Count：16 Percentile：56.9(Chemistry, Physical)

A combination of X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) using synchrotron radiation is applied to clarify surface chemical states of $$beta$$-FeSi$$_{2}$$ films fabricated by an ion-beam sputtering deposition method. The differences in the chemical states of the films fabricated at substrate temperatures of 873, 973 and 1173 K are investigated.

Journal Articles

Formation of isotopically enriched silicon film from fluorosilane produced by isotopically selective infrared multiphoton dissociation

Oba, Hironori; Suzuki, Hiroshi*; Esaka, Fumitaka; Taguchi, Tomitsugu; Yamada, Yoichi; Yamamoto, Hiroyuki; Sasase, Masato*; Yokoyama, Atsushi

Journal of the Vacuum Society of Japan, 52(6), p.292 - 295, 2009/07

no abstracts in English

Journal Articles

Non-destructive depth profile analysis for surface and buried interface of Ge thin film on Si substrate by high-energy synchrotron radiation X-ray photoelectron spectroscopy

Yamamoto, Hiroyuki; Yamada, Yoichi; Sasase, Masato*; Esaka, Fumitaka

Journal of Physics; Conference Series, 100, p.012044_1 - 012044_4, 2008/00

https://doi.org/10.1088/1742-6596/100/1/012044
 Times Cited Count：6 Percentile：88.21(Nanoscience & Nanotechnology)

Non-destructive depth profile analysis with better depth resolution is required for the characterization of nano-materials. X-ray photoelectron spectroscopy (XPS) is the typically non-destructive analysis, however, XPS with fixed excitation energy source cannot provide depth profile without additional technique. On the other hand, analyzing depth of XPS can be varied with the energy tunable excitation source, such as the synchrotron-radiation (SR), since the escape depth of the photoelectrons depends on their kinetic energy. In the present study, Ge thin films (2,4 nm) on two different Si substrates (hydrogen terminated, native oxide) has been analyzed to obtain depth profile of the thin film and buried interface of Ge/Si under the film with two different Si substrates. The XPS spectra clearly show the difference obtained from the varied analyzing depth. These results suggest that the SR-XPS can be applicable for non-destructive depth profile analysis of surface and buried interface.

Journal Articles

Local neutron transmutation doping using isotopically enriched silicon film

Yamada, Yoichi; Yamamoto, Hiroyuki; Oba, Hironori; Sasase, Masato*; Esaka, Fumitaka; Yamaguchi, Kenji; Udono, Haruhiko*; Shamoto, Shinichi; Yokoyama, Atsushi; Hojo, Kiichi

Journal of Physics and Chemistry of Solids, 68(11), p.2204 - 2208, 2007/11

https://doi.org/10.1016/j.jpcs.2007.08.056
 Times Cited Count：6 Percentile：31.31(Chemistry, Multidisciplinary)

$$^{30}$$Si in natural Si has been widely used for a doping source, since $$^{30}$$Si can be transmuted into $$^{31}$$P by thermal neutron (Neutron Transmutation Doping, NTD). NTD of nanostructure fabricated from $$^{30}$$Si-enriched materials can serve as a controlled local doping method with tunable dopant concentration, which cannot be realized by conventional doping methods such as ion implantation. In the present study, $$^{30}$$Si-enriched thin film has been fabricated in order to demonstrate the local NTD. The $$^{30}$$Si-enriched film with thickness of 100 nm was deposited on the Si(100) substrate by plasma enhanced chemical vapor deposition using $$^{30}$$Si-enriched SiF$$_{4}$$ as the source gases. The film contains 7.1 % of $$^{30}$$Si, which is twice higher than that of natural Si. Possible contaminant, fluorine, is lower than 0.6 at.% determined from X-ray photoelectron spectra. Nanostructure of films and changes of electronic properties by the neutron irradiation will also be discussed.

JAEA Reports

FBR Fuels reprocessing experiments at CPF

Kishimoto, Yoichiro; *; Kawata, Tomio*; *; *; Ouchi, Jin; *; *

PNC TN8410 88-026, 217 Pages, 1988/05

PNC-TN8410-88-026.pdf:4.12MB

None

JAEA Reports

FBR reprocessing experiments at CPF, 15

Kishimoto, Yoichiro; Kawata, Tomio*; Ouchi, Jin; *; Sanyoshi, Hirotaka*; ; *

PNC TN8410 88-004, 123 Pages, 1987/12

PNC-TN8410-88-004.pdf:3.95MB

None

Oral presentation

Fabrication of $$^{30}$$Si-enriched thin film for local neutron transmutation doping

Yamada, Yoichi; Yamamoto, Hiroyuki; Oba, Hironori; Sasase, Masato*; Esaka, Fumitaka; Yamaguchi, Kenji; Udono, Haruhiko*; Shamoto, Shinichi; Yokoyama, Atsushi; Hojo, Kiichi

no journal, , 

$$^{30}$$Si in natural Si has been widely used for a doping source, since $$^{30}$$Si can be transmuted into $$^{31}$$P by thermal neutron (Neutron Transmutation Doping, NTD). NTD of nanostructure fabricated from $$^{30}$$Si-enriched materials can serve as a controlled local doping method with tunable dopant concentration, which cannot be realized by conventional doping methods such as ion implantation. In the present study, $$^{30}$$Si-enriched thin film has been fabricated in order to demonstrate the local NTD. The $$^{30}$$Si-enriched film with thickness of 100 nm was deposited on the Si(100) substrate by plasma enhanced chemical vapor deposition using $$^{30}$$Si-enriched SiF$$_{4}$$ as the source gases. The film contains 7.1 % of $$^{30}$$Si, which is twice higher than that of natural Si. Possible contaminant, fluorine, is lower than 0.6 at.% determined from X-ray photoelectron spectra. Nanostructure of films and changes of electronic properties by the neutron irradiation will also be discussed.

Oral presentation

$$^{30}$$Si-enriched thin film for local neutron transmutation doping

Yamada, Yoichi; Yamamoto, Hiroyuki; Oba, Hironori; Sasase, Masato*; Esaka, Fumitaka; Yamaguchi, Kenji; Udono, Haruhiko*; Shamoto, Shinichi; Yokoyama, Atsushi; Hojo, Kiichi

no journal, , 

$$^{30}$$Si in natural Si has been widely used for a doping source, since $$^{30}$$Si can be transmuted into $$^{31}$$P by thermal neutron (Neutron Transmutation Doping, NTD). In the present study, $$^{30}$$Si-enriched thin film has been fabricated in order to demonstrate the local NTD. The $$^{30}$$Si-enriched film with thickness of 100 nm was deposited on the Si(100) substrate by plasma enhanced chemical vapor deposition using $$^{30}$$Si-enriched SiF$$_{4}$$ as the source gases. Nanostructure of films and changes of electronic properties by the neutron irradiation will be discussed.

Oral presentation

$$^{30}$$Si-enriched thin film for local neutron transmutation doping

Yamada, Yoichi; Yamamoto, Hiroyuki; Oba, Hironori; Sasase, Masato*; Esaka, Fumitaka; Yamaguchi, Kenji; Udono, Haruhiko*; Shamoto, Shinichi; Yokoyama, Atsushi; Hojo, Kiichi

no journal, , 

$$^{30}$$Si in natural Si has been widely used for a doping source, since $$^{30}$$Si can be transmuted into $$^{31}$$P by thermal neutron (Neutron Transmutation Doping, NTD). In the present study, $$^{30}$$Si-enriched thin film has been fabricated in order to demonstrate the local NTD. The $$^{30}$$Si-enriched film with thickness of 100 nm was deposited on the Si(100) substrate by plasma enhanced chemical vapor deposition using $$^{30}$$Si-enriched SiF$$_{4}$$ as the source gases. Nanostructure of films and changes of electronic properties by the neutron irradiation will be discussed.

Oral presentation

Fabrication and estimation of $$^{30}$$Si-enriched thin films for local neutron transmutation doping

Yamada, Yoichi; Yamamoto, Hiroyuki; Oba, Hironori; Sasase, Masato*; Esaka, Fumitaka; Yamaguchi, Kenji; Udono, Haruhiko*; Shamoto, Shinichi; Yokoyama, Atsushi; Hojo, Kiichi

no journal, , 

Fabrication and estimation of $$^{30}$$Si-enriched thin films for local neutron transmutation doping has been attempted.

Oral presentation

Neutron transmutation doping of $$^{30}$$Si enriched thin film

Yamada, Yoichi; Yamamoto, Hiroyuki; Oba, Hironori; Sasase, Masato*; Esaka, Fumitaka; Udono, Haruhiko*; Yamaguchi, Kenji; Yokoyama, Atsushi; Hojo, Kiichi; Shamoto, Shinichi

no journal, , 

Neutron transmutation doping has been tried by using $$^{30}$$Si enriched thin film in order to fabricate nano doping devices.

Oral presentation

Non-destructive analysis of Ge/Si interface; High energy X-ray photoelectron spectroscopy using synchrotron radiation

Yamamoto, Hiroyuki; Esaka, Fumitaka; Yamada, Yoichi; Sasase, Masato*

no journal, , 

Analyzing depth of XPS can be varied with the energy tunable excitation source, such as the synchrotron-radiation (SR), since the escape depth of the photoelectrons depends on their kinetic energy. In the present study, Ge thin films (2,4 nm) on two different Si substrates (hydrogen terminated, native oxide) has been analyzed to obtain depth profile of the thin film and buried interface of Ge/Si under the film with two different Si substrates. The XPS spectra clearly show the difference obtained from the varied analyzing depth. These results suggest that the SR-XPS can be applicable for non-destructive depth profile analysis of surface and buried interface.

Oral presentation

Chemical reactions of hydrogenated diamond-like carbon thin films with oxygen atoms

Tagawa, Masahito*; Yokota, Kumiko*; Matsumoto, Koji*; Kitamura, Akira*; Yamada, Noriko*; Kanda, Kazuhiro*; Niibe, Masahito*; Yoshigoe, Akitaka; Teraoka, Yuden; Belin, M.*; et al.

no journal, , 

We have investigated on degradation of hydrogenated diamond-like carbon (HDLC) surfaces by atomic oxygen beams for space environments under laboratory environments. HDLC was formed on silicon surfaces by a plasma CVD method. The atomic oxygen neams were generated by a laser detonation method. The HDLC surfaces modified by the atomic oxygens were analyzed by Synchrotron Radiation Photo-Emission Spectroscopy (SRPES), Ratherford Backscattering Spectroscopy (RBS), Elestic Recoil Detection Analysis (ERDA), Near-Edge X-ray Absorption Fine Structure method (NEXAFS). Chemical bonding states of oxygen atoms were almost maintained as they were. Concentrations of carbon and hydrogen, sp$$^{2}$$/sp$$^{3}$$ ratio were decreased by the action of oxygen atoms. We concluded that carbon atoms in the sp$$^{2}$$ state were selectively etched out.

Oral presentation

Selective etching of hydrogenated diamond-like carbon thin films by hyperthermal oxygen atomic beams

Tagawa, Masahito*; Yokota, Kumiko*; Kitamura, Akira*; Matsumoto, Koji*; Yamada, Noriko*; Kanda, Kazuhiro*; Niibe, Masahito*; Yoshigoe, Akitaka; Teraoka, Yuden; Belin, M.*; et al.

no journal, , 

Degradation of hydrogenated diamond -like carbon surfaces in space environments by action of high speed atomic oxygen beams has been investigated in laboratory environments. The HDLC was prepared on Si substrates by a plasma CVD method. High speed oxygen atomic beams were generated by a laser detonation method. The HDLC surfaces irradiated by the oxygen atomic beams were analyzed by Synchrotron Radiation Photoemission Spectroscopy (SRPES), Ratherford Backscattering Spectroscopy (RBS), Elastic Recoil Detection Analysis (ERDA), Near-Edge X-ray Absorption Fine Structure (NEXAFS). Although chemical bonding states of oxygen atoms were maintained as they were even after the oxygen atomic beam irradiation, concentrations of carbon and hydrogen were decreased. The sp$$^{2}$$/sp$$^{3}$$ ratio was also decreased. Consequently, carbon atoms in the sp$$^{2}$$ state were selectively etched out with hydrogen atoms by chemical reactions with oxygen atomic beams.

Oral presentation

Non-destructive depth profiling of steel surface by quantum beam

Yamamoto, Hiroyuki; Yamada, Yoichi; Matsue, Hideaki; Soyama, Kazuhiko; Esaka, Fumitaka; Sasase, Masato*

no journal, , 

Non-destructive depth profiling of steel surface by quantum beam has been introduced. Hard X-ray photoelectron spectroscopy using synchrotron radiation and neutron depth profiling using reactor have been applied for surface analysis.

Oral presentation

Surface characterization of $$beta$$-FeSi$$_{2}$$ films by synchrotron radiation fabricated with ion beam sputter deposition

Esaka, Fumitaka; Yamamoto, Hiroyuki; Matsubayashi, Nobuyuki*; Yamada, Yoichi*; Sasase, Masato*; Magara, Masaaki; Kimura, Takaumi; Yamaguchi, Kenji; Shamoto, Shinichi

no journal, , 

Synchrotron radiation excited XPS and XAS were utilized to investigate chemical states of the surface of $$beta$$-FeSi$$_{2}$$ films fabricated by ion beam sputter deposition. The analysis was performed at the BL-13C of the Photon Factory in KEK. In the XPS analysis, depth profiling was carried out by changing the kinetic energy of photoelectrons. As a result, the relative ratios of SiO$$_{2}$$ and SiO$$_{2-X}$$ increased with decreasing the kinetic energy of photoelectrons. Simulation results indicated that the SiO$$_{2}$$ formed at the upper layer and the SiO$$_{2-X}$$ formed at the lower layer of the surface. These results show that these analytical methods enable us to investigate chemical states of solid surfaces in detail.

Oral presentation

Formation of isotopically enriched Si thin films by plasma chemical vapor deposition

Oba, Hironori; Suzuki, Hiroshi*; Esaka, Fumitaka; Yamada, Yoichi*; Yamamoto, Hiroyuki; Sasase, Masato*; Yokoyama, Atsushi

no journal, , 

no abstracts in English

Oral presentation

Determination of trace elements in low-level radioactive liquid waste of reprocessing plant using chelating disk separation/ICP-AES

Okano, Masanori; Goto, Yuichi; Jitsukata, Shu*; Nemoto, Hirokazu*; Takano, Masato; Komoto, Norio; Kuno, Takehiko; Yamada, Keiji

no journal, , 

no abstracts in English

Oral presentation

Development of true coincidence summing correction for cascade $$gamma$$-ray emitters including $$^{134}$$Cs, 2; Study of the coincidence summing effect taking into account for the thickness of the cylindrical shaped volume sample

Yamada, Takashi*; Abe, Takaaki*; Asai, Masato; Yonezawa, Chushiro*; Kakita, Kazutoshi*; Hirai, Shoji*

no journal, , 

The true coincidence summing corrections for cascade $$gamma$$ rays are usually carried out by using $$gamma$$-ray detection efficiencies averaged over whole sample volume. This is not an exact method, but is recognized to be practically useful. However, a recent international comparison experiment suggested that this method provides slightly small correction factors. To solve this problem, we developed a method to calculate the true coincidence summing corrections for cylindrical shaped volume samples by dividing the volume sample into a number of plane samples, calculating the efficiencies for each plane sample with summing corrections, and integrating them over whole sample volume. This method improved the problem of small correction factors.

21 (Records 1-20 displayed on this page)