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Journal Articles

Development of high resistant anti-reflection coating by using Al$$_{2}$$O$$_{3}$$/SiO$$_{2}$$ multilayer

Ochi, Yoshihiro; Nagashima, Keisuke; Okada, Hajime; Tanaka, Momoko; Tateno, Ryo*; Furukawa, Yasuyuki*; Sugiyama, Akira

Proceedings of SPIE, Vol.8885, p.88851Z_1 - 88851Z_6, 2013/11

https://doi.org/10.1117/12.2030096
 Times Cited Count：4 Percentile：86.95(Optics)

We designed and fabricated high damage-resistant AR coating using Al$$_{2}$$O$$_{3}$$/SiO$$_{2}$$ layers. As a result of irradiation test using 500 ps pulses at 1 kHz, the damage threshold of the AR coating was estimated to be over 36 J/cm$$^{2}$$ (average value). We also fabricated high reflection (HR) mirrors using Al$$_{2}$$O$$_{3}$$/SiO$$_{2}$$ layers added on Ta$$_{2}$$O$$_{5}$$/SiO$$_{2}$$ layers and measured damage threshold of them for 7 ns, 500 ps, and 1 ps pulses.

Oral presentation

Design of the key parts for the winding pack in the JT-60SA PF coil system

Tsuchiya, Katsuhiko; Kizu, Kaname; Murakami, Haruyuki; Yoshida, Kiyoshi; Murai, Takashi*; Okada, Yasuyuki*; Nomoto, Kazuhiro*; Minato, Tsuneaki*

no journal, , 

no abstracts in English

Oral presentation

High resistant multilayer coatings for thin-disk laser amplifier

Ochi, Yoshihiro; Nagashima, Keisuke; Maruyama, Momoko; Okada, Hajime; Sugiyama, Akira; Tateno, Ryo*; Furukawa, Yasuyuki*

no journal, , 

We designed and fabricated high resistant AR and HR coatings using Al$$_{2}$$O$$_{3}$$ layer for Yb:YAG tin-disk amplifier. The damage threshold fluences for 520 ps pulse (AR, HR) and 1.2 ps pulse (HR only) were measured by uncompressed and compressed pulses, respectively, from the regenerative amplifier in QUADRA-T. As results, the damage threshold fluence of the AR coating of Al$$_{2}$$O$$_{3}$$/SiO$$_{2}$$ multilayer was 75 J/cm$$^{2}$$ for 520 ps pulse. This is satisfied out target value 40 J/cm$$^{2}$$ to use in the amplifiers. For the HR coating, the highest damage threshold fluences, 2.4 J/cm$$^{2}$$ for 1.2 ps pulse and 123.6 J/cm$$^{2}$$ for 520 ps pulse, respectively, were obtained by manipulating Al$$_{2}$$O$$_{3}$$/SiO$$_{2}$$ layer thickness to set a point of the maximum electric field in the SiO$$_{2}$$ layer.

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