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Deng, Z.*; Zhao, K.*; Gu, B.; Han, W.*; Zhu, J. L.*; Wang, X. C.*; Li, X.*; Liu, Q. Q.*; Yu, R. C.*; Goko, Tatsuo*; et al.
Physical Review B, 88(8), p.081203_1 - 081203_5, 2013/08
Times Cited Count:74 Percentile:92.05(Materials Science, Multidisciplinary)Deng, Z.*; Jin, C. Q.*; Liu, Q. Q.*; Wang, X. C.*; Zhu, J. L.*; Feng, S. M.*; Chen, L. C.*; Yu, R. C.*; Arguello, C.*; Goko, Tatsuo*; et al.
Nature Communications (Internet), 2, p.1425_1 - 1425_5, 2011/08
Times Cited Count:160 Percentile:93.76(Multidisciplinary Sciences)In a prototypical ferromagnet (Ga,Mn)As based on a III-V semiconductor, substitution of divalent Mn atoms into trivalent Ga sites leads to severely limited chemical solubility and metastable specimens available only as thin films. The doping of hole carriers via (Ga,Mn) substitution also prohibits electron doping. To overcome these difficulties, Masek et al. theoretically proposed systems based on a I-II-V semiconductor LiZnAs, where isovalent (Zn,Mn) substitution is decoupled from carrier doping with excess/deficient Li concentrations. Here we show successful synthesis of Li(ZnMn)As in bulk materials. We reported that ferromagnetism with a critical temperature of up to 50 K is observed in nominally Li-excess compounds, which have p-type carriers.
Heffner, R.*; Goko, Tatsuo*; Andreica, D.*; Oishi, Kazuki*; Higemoto, Wataru; Ito, Takashi; Amato, A.*; Spehling, J.*; Klauss, H. H.*; Bauer, E. D.*; et al.
Journal of Physics; Conference Series, 225, p.012011_1 - 012011_6, 2010/06
Times Cited Count:1 Percentile:50.25(Physics, Applied)Sato, Kazuhiko*; Sato, Koichi*; Yoshida, Tetsushige*; Taniguchi, Hiromi*; Goko, Tatsuro*; Ito, Takashi; Oishi, Kazuki*; Higemoto, Wataru
Physica B; Condensed Matter, 404(5-7), p.600 - 602, 2009/04
Times Cited Count:3 Percentile:16.75(Physics, Condensed Matter)Zero-field muon spin relaxation was measured for organic antiferromagnet '-(BEDT-TTF)ICl under high pressure of up to 1.37 GPa. Neel temperature, which is 22 K at ambient pressure, increases with increasing pressure and becomes approximately 48 K at 1.37 GPa. Muon precession frequency at 1.37 GPa, becomes about 5 times larger than that at ambient pressure.
Sato, Koki*; Goko, Tatsuro*; Takeshita, Satoshi*; Hayashi, Yuko*; Arai, Juichiro*; Higemoto, Wataru; Nishiyama, Kusuo*; Nagamine, Kanetada*
Physica B; Condensed Matter, 374-375, p.40 - 43, 2006/03
Times Cited Count:4 Percentile:22.72(Physics, Condensed Matter)We have performed muon spin relaxation and resistivity measurements under high pressure in LaBaCuO with x=0.125 and 0.135. With increasing pressure, the superconducting critical temperature increases for both samples. Even by applying pressure, static magnetic order still exists. This result indicates the LTT structure is not always necessary for stabilizing the static magnetic order. However, the magnetic volume fraction estimated is reduced by applying pressure. The reduction of the magnetic volume fraction for x=0.125 is less than that for x=0.135. This means hole concentration is one of the important factors for the appearance of the static magnetic order.
Higemoto, Wataru; Ito, Takashi; Sato, Kazuhiko*; Oishi, Kazuki*; Haga, Yoshinori; Onuki, Yoshichika; Goko, Tatsuro*
no journal, ,
CeIrSi have been paid attention because disappearance of antiferromagnetism and appearance of inversion symmetry broken superconductivity are seen in this compound under high pressure. The antiferromagnetism is not confirmed by using neutron and magnetism of CeIrSi is not clear yet. We have measured muon spin relaxation under high pressure in CeIrSi to investigate the magnetism under high pressure. Detail will be reported in the presentation.
Higemoto, Wataru; Ito, Takashi; Sato, Kazuhiko*; Oishi, Kazuki*; Yamamoto, Etsuji; Haga, Yoshinori; Onuki, Yoshichika; Goko, Tatsuro*
no journal, ,
no abstracts in English
Higemoto, Wataru; Ito, Takashi; Kaneko, Koji; Oshima, Kohei*; Goko, Tatsuro*; Robert, S.*; Onuki, Yoshichika*
no journal, ,
no abstracts in English
Higemoto, Wataru; Ooshima, Kohei; Ito, Takashi; Kaneko, Koji; Goko, Tatsuro*; Robert, S.*; Onuki, Yoshichika*
no journal, ,
no abstracts in English