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O
(001) surface; A DFT studyMao, W.*; Chikada, Takumi*; Shimura, Kenichiro*; Suzuki, Akihiro*; Yamaguchi, Kenji; Terai, Takayuki*
Journal of Nuclear Materials, 443(1-3), p.555 - 561, 2013/11
Times Cited Count：3 Percentile：25.73(Materials Science, Multidisciplinary)In this work, 
calculations based on density functional theory (DFT) and generalized gradient approximation were performed to investigate the structural and electronic properties of the cubic Er
O
(001) surface and H adsorption processes on this surface. Several stable adsorption sites were identified, and at the most energetically favorable adsorption sites it was found that H bonds with O atoms at the cubic ErO (001) surface with an adsorption energy of 295.68 kJ mol
at coverage 1/8 ML, which was inclined to decrease with the increase of H coverage (
1/4 ML). In addition, the calculations revealed that the dissociative H atom configurations have adsorption energies that are at least 152.64 kJ mol greater than the H molecule configurations on the surface. These results are discussed in regard of the hydrogen isotope permeation behavior in the tritium permeation barrier in a fusion reactor.
Shimura, Kenichiro*; Yamaguchi, Kenji; Terai, Takayuki*; Yamawaki, Michio*
Journal of Alloys and Compounds, 449(1-2), p.357 - 361, 2008/01
Times Cited Count：0 Percentile：0.01(Chemistry, Physical)no abstracts in English
-FeSi prepared by ion beam sputter deposition (IBSD) methodZhuravlev, A. V.; Yamamoto, Hiroyuki; Shimura, Kenichiro*; Yamaguchi, Kenji; Shamoto, Shinichi; Hojo, Kiichi; Terai, Takayuki*
Thin Solid Films, 515(22), p.8149 - 8153, 2007/08
Times Cited Count：3 Percentile：17.87(Materials Science, Multidisciplinary)A semiconducting silicide, -FeSi, formed on a Si substrate, is known to exhibit strong photoluminescence (PL) peak at around 0.8 eV when it is annealed at high temperature (1073-1173 K). On the other hand, dislocation-related band of Si has intensity maxima at 0.81 eV. In the present study, the PL spectra were taken at the various stages of IBSD in order to understand the processes that are responsible for the observed PL enhancement. We observed a strong PL peak at around 0.8 eV in IBSD-grown -FeSi film on Si substrate, as well as in substrate itself, upon thermal annealing in air at 1153 K. The most pronounced peak at 0.8 eV was observed when Si substrates were sputter etched by Ne
, prior to the thermal annealing in air. However, the temperature dependence of peak intensity of -FeSi was different from that of SE-treated Si, where thermal quenching appeared to occur at slightly lower temperature in the former.
-FeSi thin film prepared by ion beam sputter deposition methodSasase, Masato*; Shimura, Kenichiro*; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi
Nuclear Instruments and Methods in Physics Research B, 257(1-2), p.186 - 189, 2007/04
Times Cited Count：5 Percentile：40.96(Instruments & Instrumentation)Beta iron disilicide (-FeSi) is one of the candidate materials for a compound semiconductor. We have employed ion beam sputter deposition method to grow highly oriented -FeSi film on a single crystal Si(100) substrate. In the present study, sputter etching effect of the substrate is investigated by the cross-sectional transmission electron microscope (TEM) observation in order to observe nanostructural changes as a function of Ne energy. The observed TEM images show that the 1 keV sputtering provides uniform films with few defects and smooth interface. The number of the produced defects rapidly increases with the energy. The obtained -FeSi tends to form small grains at the higher energy. Quite rough surface is also observed in this condition. Higher energies produce excessive amount of damages for the substrate to form epitaxially grown film. These results imply that a certain fluence is required for better quality of the deposited film.
-FeSi/Si(100) prepared by ion beam sputter depositionSasase, Masato*; Shimura, Kenichiro*; Yamamoto, Hiroyuki; Yamaguchi, Kenji; Shamoto, Shinichi; Hojo, Kiichi
Japanese Journal of Applied Physics, Part 1, 45(6A), p.4929 - 4933, 2006/06
Times Cited Count：9 Percentile：34.33(Physics, Applied)no abstracts in English
-FeSi films on Si substrateYamaguchi, Kenji; Shimura, Kenichiro; Udono, Haruhiko*; Sasase, Masato*; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi
Thin Solid Films, 508(1-2), p.367 - 370, 2006/06
Times Cited Count：12 Percentile：49.71(Materials Science, Multidisciplinary)no abstracts in English
-FeSi thin film fabricated on Si and SIMOX substrate by IBSD methodShimura, Kenichiro; Yamaguchi, Kenji; Sasase, Masato*; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi
Vacuum, 80(7), p.719 - 722, 2006/05
Times Cited Count：9 Percentile：34.33(Materials Science, Multidisciplinary)no abstracts in English
-FeSi film prepared by ion beam sputter deposition (IBSD) methodSasase, Masato*; Yamamoto, Hiroyuki; Yamaguchi, Kenji; Shimura, Kenichiro
Zairyo Kaihatsu No Tameno Kenbikyoho To Oyo Shashinshu, P. 194, 2006/03
no abstracts in English
Aihara, Jun; Hojo, Kiichi; Furuno, Shigemi*; Shimura, Kenichiro; Hojo, Tomohiro*; Sawa, Kazuhiro; Yamamoto, Hiroyuki; Motohashi, Yoshinobu*
Nuclear Instruments and Methods in Physics Research B, 242(1-2), p.441 - 444, 2006/01
Times Cited Count：1 Percentile：12.86(Instruments & Instrumentation)no abstracts in English
Taguchi, Tomitsugu; Igawa, Naoki; Jitsukawa, Shiro; Shimura, Kenichiro
Nuclear Instruments and Methods in Physics Research B, 242(1-2), p.469 - 472, 2006/01
Times Cited Count：3 Percentile：28.19(Instruments & Instrumentation)SiC/SiC composites are one of the candidate materials for first wall in a fusion reactor because of their high strength at high temperature and low residual radioactivity after irradiation. In the fusion reactor, these materials are required to have high thermal diffusivity for heat exchange and reducing the thermal shock. Under fusion conditions, helium (He) and hydrogen (H) are produced in SiC. In this study, the effect of He ions implantation on the thermal diffusivities of SiC and SiC/SiC composite were investigated. In the results, the thermal diffusivities of SiC and SiC/SiC composites decreased after He ions implantation. However, the thermal diffusivities of SiC and SiC/SiC composites hardly reduced in the operation temperature of fusion reactor. The thermal diffusivities of He implanted specimens were partly recovered by annealing. The defect concentration induced by He implantation, X
, in SiC/SiC composites was estimated. The X rapidly decreased around 500 
C. The reason is that the He release from SiC starts at 500 C.
-FeSi thin film prepared by ion beam sputter deposition methodShimura, Kenichiro; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Sasase, Masato*; Shamoto, Shinichi; Hojo, Kiichi
Nuclear Instruments and Methods in Physics Research B, 242(1-2), p.673 - 675, 2006/01
Times Cited Count：6 Percentile：43.85(Instruments & Instrumentation)no abstracts in English
-FeSi via dry processesShimura, Kenichiro; Yamaguchi, Kenji; Sasase, Masato*; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi
Nuclear Instruments and Methods in Physics Research B, 242(1-2), p.676 - 678, 2006/01
Times Cited Count：0 Percentile：0.01(Instruments & Instrumentation)no abstracts in English
Shimura, Kenichiro*; Yamaguchi, Kenji; Terai, Takayuki*; Yamawaki, Michio*
Journal of Physics and Chemistry of Solids, 66(2-4), p.684 - 689, 2005/02
Times Cited Count：1 Percentile：7.27(Chemistry, Multidisciplinary)no abstracts in English
-FeSi prepared by ion beam sputter deposition methodYamaguchi, Kenji; Heya, Akira*; Shimura, Kenichiro; Katsumata, Toshinobu*; Yamamoto, Hiroyuki; Hojo, Kiichi
Thin Solid Films, 461(1), p.17 - 21, 2004/08
Times Cited Count：4 Percentile：25.12(Materials Science, Multidisciplinary)no abstracts in English
Yamaguchi, Kenji; Haraguchi, Masaharu*; Katsumata, Toshinobu*; Shimura, Kenichiro; Yamamoto, Hiroyuki; Hojo, Kiichi
Thin Solid Films, 461(1), p.13 - 16, 2004/08
Times Cited Count：10 Percentile：46.84(Materials Science, Multidisciplinary)no abstracts in English
-FeSi thin filmsShimura, Kenichiro; Katsumata, Toshinobu*; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi
Thin Solid Films, 461(1), p.22 - 27, 2004/08
Times Cited Count：8 Percentile：41.01(Materials Science, Multidisciplinary)On the formation of -FeSi using Ion Beam Sputter Deposition (IBSD) method, sputter etching (SE) followed by thermal annealing is effective substrate treatment to obtain highly (100) oriented -FeSi on Si (100). However the best condition of these treatments are not yet known. In this work, the effect of sputter etching (SE) together with annealing process on the orientation of the film is investigated. In prior to the deposition of Fe, the substrate is irradiated by Ne ion with various energy and fluence followed by thermal annealing at 1027 K for 60 minuets. The overall results show the most suitable SE condition using Ne ion on IBSD method is the energy of 1keV with the fluence of 30
10
ions/m
.
Shimura, Kenichiro*; Yamaguchi, Kenji; Terai, Takayuki*; Yamawaki, Michio*
JAERI-Conf 2003-001, p.352 - 358, 2003/03
no abstracts in English
Shimura, Kenichiro*; Yamaguchi, Kenji; Terai, Takayuki*; Yamawaki, Michio*
Physica Scripta, T103, p.101 - 104, 2003/00
Times Cited Count：2 Percentile：21.42(Physics, Multidisciplinary)In this study, the kinetics of desorption of adsorbed hydrogen from an ideal metallic surface is modeled in Cellular Automaton (CA). The modeling is achieved by downgrading the surface to one dimension. The model consists of two parts that are, surface migration and desorption. The former is attained by randomly sorting the particles at each time, the latter is realized by modeling the thermally-activated process. For the verification of this model, thermal desorption is simulated and then the comparison with the chemical kinetics is carried out. Excellent agreement is observed from the result. The overall results show that this model is reasonable to express the recombinative desorption of two chemisorbed adatoms. Although the application of this model is limited to second-order reaction case, it can be believed that the groundwork of modeling the transport dynamics of hydrogen through the surface under complex conditions is established.
Shimura, Kenichiro*; Yamaguchi, Kenji; Terai, Takayuki*; Yamawaki, Michio*
Journal of Nuclear Materials, 307-311(2), p.1478 - 1483, 2002/12
Times Cited Count：2 Percentile：17.03(Materials Science, Multidisciplinary)no abstracts in English
Okoshi, K.*; Toda, S.*; Shimura, Kenichiro*; Yamaguchi, Kenji; Terai, Takayuki*; Yamawaki, Michio*
Physica Scripta, T94, p.16 - 20, 2001/10
Times Cited Count：2 Percentile：20.74(Physics, Multidisciplinary)no abstracts in English
