JOPSS - Search Results

Journal Articles

Surface characterization of homoepitaxial -FeSi $_{2}$ film on -FeSi $_{2}$ (111) substrate by X-ray photoelectron and absorption spectroscopy

Esaka, Fumitaka; Yamamoto, Hiroyuki; Udono, Haruhiko*; Matsubayashi, Nobuyuki*; Yamaguchi, Kenji; Shamoto, Shinichi; Magara, Masaaki; Kimura, Takaumi

Physics Procedia, 11, p.150 - 153, 2011/02

https://doi.org/10.1016/j.phpro.2011.01.043

Times Cited Count：0 Percentile：0.01(Optics)

Surface characterization of homoepitaxial -FeSi $_{2}$ film on -FeSi $_{2}$ (111) substrate has been performed by X-ray photoelectron and X-ray absorption spectroscopy.

Journal Articles

Spectroscopic characterization of -FeSi $_{2}$ single crystals and homoepitaxial -FeSi $_{2}$ films by XPS and XAS

Esaka, Fumitaka; Yamamoto, Hiroyuki; Udono, Haruhiko*; Matsubayashi, Nobuyuki*; Yamaguchi, Kenji; Shamoto, Shinichi; Magara, Masaaki; Kimura, Takaumi

Applied Surface Science, 257(7), p.2950 - 2954, 2011/01

https://doi.org/10.1016/j.apsusc.2010.10.097

Times Cited Count：10 Percentile：42.01(Chemistry, Physical)

Chemical state analysis by a combination of X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) using synchrotron radiation is performed for -FeSi $_{2}$ single crystals and homoepitaxial -FeSi $_{2}$ films. The Si 2p XPS and Fe L-edge XAS spectra imply that the annealing at 1173 K to remove native oxide layers on the crystal induces the formation of FeSi in the surface. The formation of FeSi is also confirmed by Si K-edge XAS analysis. For the homoepitaxial -FeSi $_{2}$ films grown on the crystals, the Si K-edge XAS spectra indicate that structurally homogeneous -FeSi $_{2}$ films can be grown on the -FeSi $_{2}$ single crystals when the substrate temperatures of 973 and 1073 K are applied for molecular beam epitaxy (MBE). Consequently, it is indicated that the combination of XPS and XAS using synchrotron radiation is a useful tool to clarify chemical states nondestructively.

Journal Articles

X-ray photoelectron and X-ray absorption spectroscopic study on -FeSi $_{2}$ thin films fabricated by ion beam sputter deposition

Esaka, Fumitaka; Yamamoto, Hiroyuki; Matsubayashi, Nobuyuki*; Yamada, Yoichi*; Sasase, Masato*; Yamaguchi, Kenji; Shamoto, Shinichi; Magara, Masaaki; Kimura, Takaumi

Applied Surface Science, 256(10), p.3155 - 3159, 2010/03

https://doi.org/10.1016/j.apsusc.2009.11.090

Times Cited Count：16 Percentile：56.9(Chemistry, Physical)

A combination of X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) using synchrotron radiation is applied to clarify surface chemical states of -FeSi $_{2}$ films fabricated by an ion-beam sputtering deposition method. The differences in the chemical states of the films fabricated at substrate temperatures of 873, 973 and 1173 K are investigated.

Journal Articles

Direct and indirect processes in photon-stimulated ion desorption from condensed formamide

Ikeura, Hiromi*; Sekiguchi, Tetsuhiro; Baba, Yuji; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Shimada, Hiromichi*

Surface Science, 593(1-3), p.303 - 309, 2005/11

https://doi.org/10.1016/j.susc.2005.06.075

Times Cited Count：5 Percentile：26.14(Chemistry, Physical)

no abstracts in English

Journal Articles

Characterization of air-exposed surface -FeSi $_{2}$ fabricated by ion beam sputter deposition method

Saito, Takeru; Yamamoto, Hiroyuki; Yamaguchi, Kenji; Nakanoya, Takamitsu; Hojo, Kiichi; Haraguchi, Masaharu*; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Tanaka, Tomoaki*; Shimada, Hiromichi*

Nuclear Instruments and Methods in Physics Research B, 206, p.321 - 325, 2003/05

https://doi.org/10.1016/S0168-583X(03)00754-7

Times Cited Count：7 Percentile：46.83(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Fabrication of -FeSi $_{2}$ thin films on Si(III) surface by solid phase epitaxy (SPE) analyzed by means of synchrotron radiation XPS (SR-XPS)

Saito, Takeru; Yamamoto, Hiroyuki; Asaoka, Hidehito; Haraguchi, Masaharu*; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Tanaka, Tomoaki*; Shimada, Hiromichi*; Hojo, Kiichi

Analytical Sciences (CD-ROM), 17(Suppl.), p.1073 - 1076, 2002/03

no abstracts in English

Journal Articles

XAS and XPS combined analysis using high-resolution and high-flux soft X-ray from synchrotron radiation

Matsubayashi, Nobuyuki*; Tanaka, Tomoaki*; Imamura, Motoyasu*; Shimada, Hiromichi*; Saito, Takeru

Analytical Sciences (CD-ROM), 17(Suppl.), p.119 - 121, 2002/03

no abstracts in English

Journal Articles

In-situ XAFS analysis of Y zeolite-supported Rh catalysts during high-pressure hydrogenation of CO $_{2}$

Bando, Kyoko*; Saito, Takeru; Sato, Koichi*; Tanaka, Tomoaki*; Dumeignil, F.*; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Shimada, Hiromichi*

Topics in Catalysis, 18(1-2), p.59 - 65, 2002/01

no abstracts in English

Journal Articles

Orientation-selective excitation and dissociation in multilayer benzene

Sekiguchi, Tetsuhiro; Baba, Yuji; Sekiguchi, Hiromi*; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Shimada, Hiromichi*

Applied Surface Science, 169-170(1-4), p.287 - 291, 2001/06

no abstracts in English

Journal Articles

Fragmentation and charge-neutralization pathways depending on molecular orientation at surfaces

Sekiguchi, Tetsuhiro; Sekiguchi, Hiromi*; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Shimada, Hiromichi*; Baba, Yuji

Surface Science, 482-485(Part.1), p.279 - 284, 2001/06

no abstracts in English

Journal Articles

Formation process of -FeSi $_{2}$ on Si(111) substrate studied by means of SR-XPS

Saito, Takeru; Yamamoto, Hiroyuki; Haraguchi, Masaharu*; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Tanaka, Tomoaki*; Shimada, Hiromichi*; Hojo, Kiichi

Photon Factory Activity Report 2001, (19), P. 205, 2001/00

http://pfwww.kek.jp/acr2001pdf/PartB/PF01UR205.pdf

no abstracts in English

Journal Articles

Selective fragmentation of surface molecules excited by linearly polarized SR

Sekiguchi, Tetsuhiro; Sekiguchi, Hiromi*; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Shimada, Hiromichi*; Baba, Yuji

Photon Factory Activity Report 1999, Part B, P. 325, 2000/11

http://ccdb5fs.kek.jp/cgi-bin/img/tiff2gif?200023002+00357

no abstracts in English

Journal Articles

Site-specific ion desorption from condensed C- and N-deuterated formamide near the caron and nitrogen K-edge

Sekiguchi, Hiromi*; Sekiguchi, Tetsuhiro; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Shimada, Hiromichi*; Baba, Yuji

Surface Science, 454-456, p.407 - 411, 2000/05

https://doi.org/10.1016/S0039-6028(00)00225-9

Times Cited Count：5 Percentile：32.8(Chemistry, Physical)

no abstracts in English

Journal Articles

Investigation on the -FeSi $_{2}$ formation mechanisms on Si(111) substrate by means of SR-XPS

Saito, Takeru; Yamamoto, Hiroyuki; Hojo, Kiichi; Matsubayashi, Nobuyuki*; Imamura, Motoyasu*; Shimada, Hiromichi*

Photon Factory Activity Report 2000, P. 82, 2000/00

http://pfwww.kek.jp/acr2000/b/y00p082.pdf

no abstracts in English

Journal Articles

Photon-stimulated ion desorption in deuterated formamide adsorbates

Sekiguchi, Hiromi*; Sekiguchi, Tetsuhiro; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Shimada, Hiromichi*; Baba, Yuji

Photon Factory Activity Report 1998, Part B, P. 37, 1999/11

http://ccdb5fs.kek.jp/cgi-bin/img/tiff2gif?199923003+00067

no abstracts in English

Oral presentation

Surface characterization of -FeSi $_{2}$ films by synchrotron radiation fabricated with ion beam sputter deposition

Esaka, Fumitaka; Yamamoto, Hiroyuki; Matsubayashi, Nobuyuki*; Yamada, Yoichi*; Sasase, Masato*; Magara, Masaaki; Kimura, Takaumi; Yamaguchi, Kenji; Shamoto, Shinichi

no journal, ,

Synchrotron radiation excited XPS and XAS were utilized to investigate chemical states of the surface of -FeSi $_{2}$ films fabricated by ion beam sputter deposition. The analysis was performed at the BL-13C of the Photon Factory in KEK. In the XPS analysis, depth profiling was carried out by changing the kinetic energy of photoelectrons. As a result, the relative ratios of SiO $_{2}$ and SiO $_{2-X}$ increased with decreasing the kinetic energy of photoelectrons. Simulation results indicated that the SiO $_{2}$ formed at the upper layer and the SiO $_{2-X}$ formed at the lower layer of the surface. These results show that these analytical methods enable us to investigate chemical states of solid surfaces in detail.

Oral presentation

XPS and XAS analysis of surface chemical states of -FeSi $_{2}$ single crystals

Esaka, Fumitaka; Yamamoto, Hiroyuki; Udono, Haruhiko*; Matsubayashi, Nobuyuki*; Yamaguchi, Kenji; Shamoto, Shinichi; Magara, Masaaki; Kimura, Takaumi

no journal, ,

Chemical states of solid surface were investigated by a combination of energy-tunable X-ray photoelectron spectroscopy and X-ray absorption spectroscopy. The analysis was performed for the -phase and -phase iron silicide single crystals. The result reveals that Si-rich and Fe-rich structures exist in the -phase single crystal. Depth profiling also indicates that the Fe-rich structure is located in the surface region, while the Si-rich structure exists in the deeper region. In conclusion, this analytical technique is a powerful tool for solid samples such as nuclear materials and fuels.

Oral presentation

Surface characterization of -FeSi $_{2}$ single crystal by synchrotron-radiation X-ray photoelectron spectroscopy and X-ray absorption spectroscopy

Esaka, Fumitaka; Yamamoto, Hiroyuki; Udono, Haruhiko*; Matsubayashi, Nobuyuki*; Yamaguchi, Kenji; Shamoto, Shinichi; Magara, Masaaki; Kimura, Takaumi

no journal, ,

Surface characterization of -FeSi $_{2}$ single crystal has been performed by synchrotron-radiation X-ray photoelectron spectroscopy and X-ray absorption spectroscopy.

Oral presentation

Surface depth profiling of FeSi $_{2}$ single crystals by synchrotron radiation excited XPS and XAS

Esaka, Fumitaka; Yamamoto, Hiroyuki; Udono, Haruhiko*; Matsubayashi, Nobuyuki*; Yamaguchi, Kenji; Shamoto, Shinichi; Magara, Masaaki; Kimura, Takaumi

no journal, ,

Surface depth profiling of FeSi $_{2}$ single crystals has been performed by synchrotron radiation excited XPS and XAS.

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Surface characterization of homoepitaxial -FeSi $_{2}$ film on -FeSi $_{2}$ (111) substrate by X-ray photoelectron and absorption spectroscopy

Spectroscopic characterization of -FeSi $_{2}$ single crystals and homoepitaxial -FeSi $_{2}$ films by XPS and XAS

X-ray photoelectron and X-ray absorption spectroscopic study on -FeSi $_{2}$ thin films fabricated by ion beam sputter deposition

Direct and indirect processes in photon-stimulated ion desorption from condensed formamide

Characterization of air-exposed surface -FeSi $_{2}$ fabricated by ion beam sputter deposition method

Fabrication of -FeSi $_{2}$ thin films on Si(III) surface by solid phase epitaxy (SPE) analyzed by means of synchrotron radiation XPS (SR-XPS)

XAS and XPS combined analysis using high-resolution and high-flux soft X-ray from synchrotron radiation

In-situ XAFS analysis of Y zeolite-supported Rh catalysts during high-pressure hydrogenation of CO $_{2}$

Orientation-selective excitation and dissociation in multilayer benzene

Fragmentation and charge-neutralization pathways depending on molecular orientation at surfaces

Formation process of -FeSi $_{2}$ on Si(111) substrate studied by means of SR-XPS

Selective fragmentation of surface molecules excited by linearly polarized SR

Site-specific ion desorption from condensed C- and N-deuterated formamide near the caron and nitrogen K-edge

Investigation on the -FeSi $_{2}$ formation mechanisms on Si(111) substrate by means of SR-XPS

Photon-stimulated ion desorption in deuterated formamide adsorbates

Surface characterization of -FeSi $_{2}$ films by synchrotron radiation fabricated with ion beam sputter deposition

XPS and XAS analysis of surface chemical states of -FeSi $_{2}$ single crystals

Surface characterization of -FeSi $_{2}$ single crystal by synchrotron-radiation X-ray photoelectron spectroscopy and X-ray absorption spectroscopy

Surface depth profiling of FeSi $_{2}$ single crystals by synchrotron radiation excited XPS and XAS