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Sakai, Takuro; Yasuda, Ryo; Iikura, Hiroshi; Nojima, Takehiro; Matsubayashi, Masahito; Kada, Wataru; Koka, Masashi; Sato, Takahiro; Okubo, Takeru; Ishii, Yasuyuki; et al.
Nuclear Instruments and Methods in Physics Research B, 306, p.299 - 301, 2013/07
Times Cited Count：7 Percentile：49.06(Instruments & Instrumentation)
-FeSi
film on -FeSi(111) substrate by X-ray photoelectron and absorption spectroscopyEsaka, Fumitaka; Yamamoto, Hiroyuki; Udono, Haruhiko*; Matsubayashi, Nobuyuki*; Yamaguchi, Kenji; Shamoto, Shinichi; Magara, Masaaki; Kimura, Takaumi
Physics Procedia, 11, p.150 - 153, 2011/02
Times Cited Count：0 Percentile：0.01(Optics)Surface characterization of homoepitaxial -FeSi film on -FeSi(111) substrate has been performed by X-ray photoelectron and X-ray absorption spectroscopy.
-FeSi single crystals and homoepitaxial -FeSi films by XPS and XASEsaka, Fumitaka; Yamamoto, Hiroyuki; Udono, Haruhiko*; Matsubayashi, Nobuyuki*; Yamaguchi, Kenji; Shamoto, Shinichi; Magara, Masaaki; Kimura, Takaumi
Applied Surface Science, 257(7), p.2950 - 2954, 2011/01
Times Cited Count：10 Percentile：41.92(Chemistry, Physical)Chemical state analysis by a combination of X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) using synchrotron radiation is performed for -FeSi single crystals and homoepitaxial -FeSi films. The Si 2p XPS and Fe L-edge XAS spectra imply that the annealing at 1173 K to remove native oxide layers on the crystal induces the formation of FeSi in the surface. The formation of FeSi is also confirmed by Si K-edge XAS analysis. For the homoepitaxial -FeSi films grown on the crystals, the Si K-edge XAS spectra indicate that structurally homogeneous -FeSi films can be grown on the -FeSi single crystals when the substrate temperatures of 973 and 1073 K are applied for molecular beam epitaxy (MBE). Consequently, it is indicated that the combination of XPS and XAS using synchrotron radiation is a useful tool to clarify chemical states nondestructively.
-FeSi thin films fabricated by ion beam sputter depositionEsaka, Fumitaka; Yamamoto, Hiroyuki; Matsubayashi, Nobuyuki*; Yamada, Yoichi*; Sasase, Masato*; Yamaguchi, Kenji; Shamoto, Shinichi; Magara, Masaaki; Kimura, Takaumi
Applied Surface Science, 256(10), p.3155 - 3159, 2010/03
Times Cited Count：16 Percentile：56.82(Chemistry, Physical)A combination of X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) using synchrotron radiation is applied to clarify surface chemical states of -FeSi films fabricated by an ion-beam sputtering deposition method. The differences in the chemical states of the films fabricated at substrate temperatures of 873, 973 and 1173 K are investigated.
-FeSi fabricated by ion beam sputter deposition methodSaito, Takeru; Yamamoto, Hiroyuki; Yamaguchi, Kenji; Nakanoya, Takamitsu; Hojo, Kiichi; Haraguchi, Masaharu*; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Tanaka, Tomoaki*; Shimada, Hiromichi*
Nuclear Instruments and Methods in Physics Research B, 206, p.321 - 325, 2003/05
Times Cited Count：7 Percentile：46.82(Instruments & Instrumentation)no abstracts in English
-FeSi thin films on Si(III) surface by solid phase epitaxy (SPE) analyzed by means of synchrotron radiation XPS (SR-XPS)Saito, Takeru; Yamamoto, Hiroyuki; Asaoka, Hidehito; Haraguchi, Masaharu*; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Tanaka, Tomoaki*; Shimada, Hiromichi*; Hojo, Kiichi
Analytical Sciences (CD-ROM), 17(Suppl.), p.1073 - 1076, 2002/03
no abstracts in English
-FeSi on Si(111) substrate studied by means of SR-XPSSaito, Takeru; Yamamoto, Hiroyuki; Haraguchi, Masaharu*; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Tanaka, Tomoaki*; Shimada, Hiromichi*; Hojo, Kiichi
Photon Factory Activity Report 2001, (19), P. 205, 2001/00
no abstracts in English
-FeSi formation mechanisms on Si(111) substrate by means of SR-XPSSaito, Takeru; Yamamoto, Hiroyuki; Hojo, Kiichi; Matsubayashi, Nobuyuki*; Imamura, Motoyasu*; Shimada, Hiromichi*
Photon Factory Activity Report 2000, P. 82, 2000/00
no abstracts in English
Matsubayashi, Masahito; Ichikawa, Hiroki; *; Tsuruno, Akira
Fifth World Conf. on Neutron Radiography, 0, p.275 - 282, 1996/00
no abstracts in English
Matsubayashi, Masahito; Tsuruno, Akira; Ichikawa, Hiroki; Kodaira, Tsuneo; Shirai, Eiji
Proceedings of 4th Asian Symposium on Research Reactors (ASRR-4), p.192 - 197, 1993/00
no abstracts in English
; *; *; *; *; *
Mitsubishi Juko Giho, 17(3), p.350 - 362, 1980/00
no abstracts in English
-FeSi films by synchrotron radiation fabricated with ion beam sputter depositionEsaka, Fumitaka; Yamamoto, Hiroyuki; Matsubayashi, Nobuyuki*; Yamada, Yoichi*; Sasase, Masato*; Magara, Masaaki; Kimura, Takaumi; Yamaguchi, Kenji; Shamoto, Shinichi
no journal, ,
Synchrotron radiation excited XPS and XAS were utilized to investigate chemical states of the surface of -FeSi films fabricated by ion beam sputter deposition. The analysis was performed at the BL-13C of the Photon Factory in KEK. In the XPS analysis, depth profiling was carried out by changing the kinetic energy of photoelectrons. As a result, the relative ratios of SiO and SiO
increased with decreasing the kinetic energy of photoelectrons. Simulation results indicated that the SiO formed at the upper layer and the SiO formed at the lower layer of the surface. These results show that these analytical methods enable us to investigate chemical states of solid surfaces in detail.
Kai, Tetsuya; Harada, Masahide; Oikawa, Kenichi; Sakai, Kenji; Maekawa, Fujio; Oi, Motoki; Shinohara, Takenao; Aizawa, Kazuya; Takata, Shinichi; Arai, Masatoshi; et al.
no journal, ,
Development of imaging techniques with pulse neutrons were started using the NeutrOn Beam-line for Observation and Research Use (NOBORU) of J-PARC at December 2008. The results in the first three months, future research plans and discussions on a new imaging facility in J-PARC are shown.
Shinohara, Takenao; Takata, Shinichi; Aizawa, Kazuya; Suzuki, Junichi; Kai, Tetsuya; Harada, Masahide; Oikawa, Kenichi; Maekawa, Fujio; Sakai, Kenji; Oi, Motoki; et al.
no journal, ,
no abstracts in English
-FeSi single crystalsEsaka, Fumitaka; Yamamoto, Hiroyuki; Udono, Haruhiko*; Matsubayashi, Nobuyuki*; Yamaguchi, Kenji; Shamoto, Shinichi; Magara, Masaaki; Kimura, Takaumi
no journal, ,
Chemical states of solid surface were investigated by a combination of energy-tunable X-ray photoelectron spectroscopy and X-ray absorption spectroscopy. The analysis was performed for the 
-phase and -phase iron silicide single crystals. The result reveals that Si-rich and Fe-rich structures exist in the -phase single crystal. Depth profiling also indicates that the Fe-rich structure is located in the surface region, while the Si-rich structure exists in the deeper region. In conclusion, this analytical technique is a powerful tool for solid samples such as nuclear materials and fuels.
-FeSi single crystal by synchrotron-radiation X-ray photoelectron spectroscopy and X-ray absorption spectroscopyEsaka, Fumitaka; Yamamoto, Hiroyuki; Udono, Haruhiko*; Matsubayashi, Nobuyuki*; Yamaguchi, Kenji; Shamoto, Shinichi; Magara, Masaaki; Kimura, Takaumi
no journal, ,
Surface characterization of -FeSi single crystal has been performed by synchrotron-radiation X-ray photoelectron spectroscopy and X-ray absorption spectroscopy.
single crystals by synchrotron radiation excited XPS and XASEsaka, Fumitaka; Yamamoto, Hiroyuki; Udono, Haruhiko*; Matsubayashi, Nobuyuki*; Yamaguchi, Kenji; Shamoto, Shinichi; Magara, Masaaki; Kimura, Takaumi
no journal, ,
Surface depth profiling of FeSi single crystals has been performed by synchrotron radiation excited XPS and XAS.
Hyakudome, Tadahiro*; Yoshida, Hiroshi*; Tsukioka, Satoshi*; Aoki, Taro*; Iikura, Hiroshi; Nojima, Takehiro; Yasuda, Ryo; Sakai, Takuro; Matsubayashi, Masahito; Maekawa, Yasunari; et al.
no journal, ,
no abstracts in English
Al
Kobayashi, Riki; Kawamura, Yukihiro*; Hirai, Daishi*; Nishioka, Takashi*; Kato, Harukazu*; Matsumura, Masahiro*; Matsubayashi, Kazuyuki*; Uwatoko, Yoshiya*; Kaneko, Koji
no journal, ,
no abstracts in English
AlKobayashi, Riki; Kawamura, Yukihiro*; Nishioka, Takashi*; Kato, Harukazu*; Matsumura, Masahiro*; Matsubayashi, Kazuyuki*; Uwatoko, Yoshiya*; Kaneko, Koji
no journal, ,
no abstracts in English
