High-sensitive XANES analysis at Ce L-edge for Ce in bauxites using transition-edge sensors; Implications for Ti-rich geological samples

Li, W.*; Yamada, Shinya*; Hashimoto, Tadashi; Okumura, Takuma*; Hayakawa, Ryota*; Nitta, Kiyofumi*; Sekizawa, Oki*; Suga, Hiroki*; Uruga, Tomoya*; Ichinohe, Yuto*; et al.

Analytica Chimica Acta, 1240, p.340755_1 - 340755_9, 2023/02

https://doi.org/10.1016/j.aca.2022.340755

no abstracts in English

Mesospheric ionization during substorm growth phase

Murase, Kiyoka*; Kataoka, Ryuho*; Nishiyama, Takanori*; Nishimura, Koji*; Hashimoto, Taishi*; Tanaka, Yoshimasa*; Kadokura, Akira*; Tomikawa, Yoshihiro*; Tsutsumi, Masaki*; Ogawa, Yasunobu*; et al.

Journal of Space Weather and Space Climate (Internet), 12, p.18_1 - 18_16, 2022/06

https://doi.org/10.1051/swsc/2022012

We identified two energetic electron precipitation (EEP) events during the growth phase of moderate substorms and estimated the mesospheric ionization rate for an EEP event for which the most comprehensive dataset from ground-based and space-born instruments was available. The mesospheric ionization signature reached below 70 km altitude and continued for ~15 min until the substorm onset, as observed by the PANSY radar and imaging riometer at Syowa Station in the Antarctic region. We also used energetic electron flux observed by the Arase and POES 15 satellites as the input for the air-shower simulation code PHITS to quantitatively estimate the mesospheric ionization rate. Combining the cutting-edge observations and simulations, we shed new light on the space weather impact of the EEP events during geomagnetically quiet times, which is important to understand the possible link between the space environment and climate.

Dynamical response of transition-edge sensor microcalorimeters to a pulsed charged-particle beam

Okumura, Takuma*; Azuma, Toshiyuki*; Bennet, D. A.*; Caradonna, P.*; Chiu, I.-H.*; Doriese, W. B.*; Durkin, M. S.*; Fowler, J. W.*; Gard, J. D.*; Hashimoto, Tadashi; et al.

IEEE Transactions on Applied Superconductivity, 31(5), p.2101704_1 - 2101704_4, 2021/08

https://doi.org/10.1109/TASC.2021.3067793

A superconducting transition-edge sensor (TES) microcalorimeter is an ideal X-ray detector for experiments at accelerator facilities because of good energy resolution and high efficiency. To study the performance of the TES detector with a high-intensity pulsed charged-particle beam, we measured X-ray spectra with a pulsed muon beam at the Japan Proton Accelerator Research Complex (J-PARC) in Japan. We found substantial temporal shifts of the X-ray energy correlated with the arrival time of the pulsed muon beam, which was reasonably explained by pulse pileup due to the incidence of energetic particles from the initial pulsed beam.

First observation of a nuclear -state of a hypernucleus,

Yoshimoto, Masahiro*; Fujita, Manami; Hashimoto, Tadashi; Hayakawa, Shuhei; Ichikawa, Yudai; Ichikawa, Masaya; Imai, Kenichi*; Nanamura, Takuya; Naruki, Megumi; Sako, Hiroyuki; et al.

Progress of Theoretical and Experimental Physics (Internet), 2021(7), p.073D02_1 - 073D02_19, 2021/07

https://doi.org/10.1093/ptep/ptab073

Observation of Coulomb-assisted nuclear bound state of -N system

Hayakawa, Shuhei; Fujita, Manami; Hasegawa, Shoichi; Hashimoto, Tadashi; Hosomi, Kenji; Ichikawa, Yudai; Imai, Kenichi*; Nanamura, Takuya; Naruki, Megumi; Sako, Hiroyuki; et al.

Physical Review Letters, 126(6), p.062501_1 - 062501_6, 2021/02

https://doi.org/10.1103/PhysRevLett.126.062501

Measurement of single-event upsets in 65-nm SRAMs under irradiation of spallation neutrons at J-PARC MLF

Kuroda, Junya*; Manabe, Seiya*; Watanabe, Yukinobu*; Ito, Kojiro*; Liao, W.*; Hashimoto, Masanori*; Abe, Shinichiro; Harada, Masahide; Oikawa, Kenichi; Miyake, Yasuhiro*

IEEE Transactions on Nuclear Science, 67(7), p.1599 - 1605, 2020/07

https://doi.org/10.1109/TNS.2020.2978257

Soft errors induced by terrestrial radiation in semiconductor devices have been of concern from the viewpoint of their reliability. Generally, to evaluate the soft error rates (SERs), neutron irradiation tests are performed at neutron facility. We have performed SER measurement for the 65-nm bulk SRAM and the FDSOI SRAM at RCNP in Osaka University and CYRIC in Tohoku University. In this study, we performed SER measurement for the same devices at BL10 in J-PARC MLF. The increasing rate of SER by reducing the supply voltage at J-PARC BL10 is larger than those obtained at RCNP and CYRIC. From PHITS simulation, the cause of this difference can be explained by the influence of the protons generated by neutron elastic scattering with hydrogen atoms in the package resin.

Impact of hydrided and non-hydrided materials near transistors on neutron-induced single event upsets

Abe, Shinichiro; Sato, Tatsuhiko; Kuroda, Junya*; Manabe, Seiya*; Watanabe, Yukinobu*; Liao, W.*; Ito, Kojiro*; Hashimoto, Masanori*; Harada, Masahide; Oikawa, Kenichi; et al.

Proceedings of IEEE International Reliability Physics Symposium (IRPS 2020) (Internet), 6 Pages, 2020/04

https://doi.org/10.1109/IRPS45951.2020.9128951

Single event upsets (SEUs) caused by neutrons have been recognized as a serious reliability problem for microelectronic devices on the ground level. In our previous work, it was found that hydride placed in front of the memory chip has considerably impact on SEU cross sections because H ions generated via elastic scattering of neutrons with hydrogen atoms are only emitted in a forward direction. In this study, the effect of components neighboring transistors on neutron-induced SEUs was investigated for 65-nm bulk SRAMs by using PHITS. It was found that the shape of the SEU cross section around few MeV comes from the thickness and the position of components placed in front of transistors when that components do not contains hydrogen atoms. By considering components adjoin memory cells in the test board used in the simulation, measured data at J-PARC BL10 were reproduced well. In addition, it was found that the effect of components neighboring transistors on neutron-induced SERs does not negligible in terrestrial environment.

Impact of irradiation side on neutron-induced single-event upsets in 65-nm Bulk SRAMs

Abe, Shinichiro; Liao, W.*; Manabe, Seiya*; Sato, Tatsuhiko; Hashimoto, Masanori*; Watanabe, Yukinobu*

IEEE Transactions on Nuclear Science, 66(7, Part 2 ), p.1374 - 1380, 2019/07

https://doi.org/10.1109/TNS.2019.2902176

Single event upsets (SEUs) caused by secondary cosmic-ray neutrons have recognized as a serious reliability problem for microelectronic devices. Acceleration tests at neutron facilities are convenient to validate soft error rates (SERs) quickly, but some corrections caused from measurement conditions are required to derive realistic SERs at actual environment or to compare other measured data. In this study, the effect of irradiation side on neutron-induced SEU cross sections was investigated by performing neutron transport simulation using PHITS. SERs for 65-nm bulk CMOS SRAMs are estimated using the sensitive volume model. It was found from simulation that SERs for the sealant side irradiation are 30-50% larger than those for the board side irradiation. This difference comes from the difference of production yield and angular distribution of secondary H and He ions, which are the main cause of SEUs. Thus the direction of neutron irradiation should be reported when the result of acceleration tests are published. This result also indicates that SERs can be reduced by equipping device with sealant side facing downward.

Estimation of muon-induced SEU rates for 65-nm bulk and UTBB-SOI SRAMs

Manabe, Seiya*; Watanabe, Yukinobu*; Liao, W.*; Hashimoto, Masanori*; Abe, Shinichiro

IEEE Transactions on Nuclear Science, 66(7), p.1398 - 1403, 2019/07

https://doi.org/10.1109/TNS.2019.2916191

Cosmic ray-induced soft errors have been recognized as a major threat for electronics used at ground level. Recently, cosmic-ray muon-induced soft errors have received much attention due to the reduction of soft error immunity on SRAMs. In the previous studies, muon-induced soft error rates (SERs) for various technology devices were predicted with only the positive muon irradiation tests and simulation. In this paper, the muon-induced SEU rates for the 65-nm bulk and UTBB-SOI SRAMs are estimated by using the experimental data of both negative and positive muons. The experimental results showed that the negative muon SEU cross sections for the bulk SRAM are significantly larger than those for the UTBB-SOI. Estimation of muon-induced SEU rates at ground level was performed using PHITS with the experimental results. The muon-induced SER on the first floor of the building was estimated to be at most 10% of the neutron-induced SER on the same floor.

Negative and positive muon-induced single event upsets in 65-nm UTBB SOI SRAMs

Manabe, Seiya*; Watanabe, Yukinobu*; Liao, W.*; Hashimoto, Masanori*; Nakano, Keita*; Sato, Hikaru*; Kin, Tadahiro*; Abe, Shinichiro; Hamada, Koji*; Tampo, Motonobu*; et al.

IEEE Transactions on Nuclear Science, 65(8), p.1742 - 1749, 2018/08

https://doi.org/10.1109/TNS.2018.2839704

Recently, the malfunction of microelectronics caused by secondary cosmic-ray muon is concerned as semiconductor devices become sensitive to radiation. In this study, we have performed muon irradiation testing for 65-nm ultra-thin body and thin buried oxide (UTBB-SOI) SRAMs in the Japan Proton Accelerator Research Complex (J-PARC), in order to investigate dependencies of single event upset (SEU) cross section on incident muon momentum and supply voltage. It was found that the SEU cross section by negative muon are approximately two to four times larger than those by positive muon in the momentum range from 35 MeV/c to 39 MeV/c. The supply voltage dependence of muon-induced SEU cross section was measured with the momentum of 38 MeV/c. SEU cross sections decrease with increasing supply voltage, but the decreasing of SEU cross section by negative muon is gentler than that by positive muon. Experimental data of positive and negative muon irradiation with the momentum of 38 MeV/c were analyzed by PHITS. It was clarified that the negative muon capture causes the difference between the SEU cross section by negative muon and that by positive muon.