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Kuroda, Junya*; Manabe, Seiya*; Watanabe, Yukinobu*; Ito, Kojiro*; Liao, W.*; Hashimoto, Masanori*; Abe, Shinichiro; Harada, Masahide; Oikawa, Kenichi; Miyake, Yasuhiro*
IEEE Transactions on Nuclear Science, 67(7), p.1599 - 1605, 2020/07
Times Cited Count：4 Percentile：44.4(Engineering, Electrical & Electronic)Soft errors induced by terrestrial radiation in semiconductor devices have been of concern from the viewpoint of their reliability. Generally, to evaluate the soft error rates (SERs), neutron irradiation tests are performed at neutron facility. We have performed SER measurement for the 65-nm bulk SRAM and the FDSOI SRAM at RCNP in Osaka University and CYRIC in Tohoku University. In this study, we performed SER measurement for the same devices at BL10 in J-PARC MLF. The increasing rate of SER by reducing the supply voltage at J-PARC BL10 is larger than those obtained at RCNP and CYRIC. From PHITS simulation, the cause of this difference can be explained by the influence of the protons generated by neutron elastic scattering with hydrogen atoms in the package resin.
Abe, Shinichiro; Sato, Tatsuhiko; Kuroda, Junya*; Manabe, Seiya*; Watanabe, Yukinobu*; Liao, W.*; Ito, Kojiro*; Hashimoto, Masanori*; Harada, Masahide; Oikawa, Kenichi; et al.
Proceedings of IEEE International Reliability Physics Symposium (IRPS 2020) (Internet), 6 Pages, 2020/04
Times Cited Count：2 Percentile：63.48(Engineering, Electrical & Electronic)Single event upsets (SEUs) caused by neutrons have been recognized as a serious reliability problem for microelectronic devices on the ground level. In our previous work, it was found that hydride placed in front of the memory chip has considerably impact on SEU cross sections because H ions generated via elastic scattering of neutrons with hydrogen atoms are only emitted in a forward direction. In this study, the effect of components neighboring transistors on neutron-induced SEUs was investigated for 65-nm bulk SRAMs by using PHITS. It was found that the shape of the SEU cross section around few MeV comes from the thickness and the position of components placed in front of transistors when that components do not contains hydrogen atoms. By considering components adjoin memory cells in the test board used in the simulation, measured data at J-PARC BL10 were reproduced well. In addition, it was found that the effect of components neighboring transistors on neutron-induced SERs does not negligible in terrestrial environment.
Shimaoka, Takehiro*; Kaneko, Junichi*; Sato, Yuki; Tsubota, Masakatsu*; Shimmyo, Hiroaki*; Chayahara, Akiyoshi*; Watanabe, Hideyuki*; Umezawa, Hitoshi*; Mokuno, Yoshiaki*
Physica Status Solidi (A), 213(10), p.2629 - 2633, 2016/10
Times Cited Count：10 Percentile：41.05(Materials Science, Multidisciplinary)Ichimura, Makoto*; Higaki, Hiroyuki*; Kakimoto, Shingo*; Yamaguchi, Yusuke*; Nemoto, Kenju*; Katano, Makoto*; Kozawa, Isao*; Muro, Taishi*; Ishikawa, Masao; Moriyama, Shinichi; et al.
Fusion Science and Technology, 51(2T), p.150 - 153, 2007/02
Times Cited Count：1 Percentile：11.31(Nuclear Science & Technology)In magnetically confined plasmas, fluctuations in the ion cyclotron range of frequency (ICRF) will be driven by the presence of non-thermal ion energy distribution. In strong ICRF heating experiments on the GAMMA 10 tandem mirror, plasmas with a strong temperature anisotropy have been formed. Alfven-ion-cyclotron (AIC) modes are spontaneously excited due to strong temperature anisotropy. High-energy ions are trapped in the local mirror and will form the velocity distribution with the strong anisotropy. To study the relation among the AIC modes, ICEs and beam-driven electrostatic instabilities with non-thermal energy distribution is the main purpose of this work. When the NBs are injected, the magnetic fluctuations due to injected beams and FP ions are detected by ICRF antennas used as pickup loops on JT-60U. The wave excitation near ion cyclotron and its higer harmonic frequencies are studied experimentally and theoretically in plasmas with non-thermal ion energy distribution.
SRShimomura, Koichiro*; Kadono, Ryosuke*; Nishiyama, Kusuo*; Watanabe, Isao*; Suzuki, Takao*; Pratt, F.*; Oishi, Kazuki; Mizuta, Masashi*; Saito, Mineo*; Chow, K. H.*; et al.
Physica B; Condensed Matter, 376-377, p.444 - 446, 2006/04
Times Cited Count：1 Percentile：6.63(Physics, Condensed Matter)CF facility and X-ray studies on DT-CFNagamine, Kanetada*; *; Ishida, Katsuhiko*; *; *; *; *; *; *; Tanase, Masakazu; et al.
Hyperfine Interactions, 101-102(1-4), p.521 - 538, 1996/00
no abstracts in English
Ito, Hitoshi; *; ; Sunaga, Hiromi; Ishigaki, Isao
Radiation Physics and Chemistry, 42(4-6), p.597 - 600, 1993/00
Times Cited Count：2 Percentile：29.78(Chemistry, Physical)no abstracts in English
*; *; *; Watanabe, Yukinobu*; *; *; *; *; *; *; et al.
JAERI-M 91-009, 56 Pages, 1991/02
no abstracts in English
Ito, Hitoshi; *; ; Sunaga, Hiromi; Ishigaki, Isao
Bokin Bobai-Shi, 19(4), p.161 - 166, 1991/00
no abstracts in English
Mitomo, Hiroshi*; *; ; Ito, Hitoshi; Ishigaki, Isao
Reports on Progress in Polymer Physics in Japan, 34, p.415 - 416, 1991/00
no abstracts in English
*; Ito, Hitoshi; ; Sunaga, Hiromi; Ishigaki, Isao
Shokuhin Shosha, 25(1-2), p.71 - 74, 1990/00
no abstracts in English
-ray sensitivities of B.pumilus E601 spores; *; Ito, Hitoshi; Ishigaki, Isao
Shokuhin Shosha, 25(1-2), p.66 - 70, 1990/00
no abstracts in English
*; *; *; *; *; *; Watanabe, Yukinobu*; *; Nakamura, Hiroyuki*; *; et al.
JAERI-M 89-167, 38 Pages, 1989/11
no abstracts in English
; Ito, Hitoshi; Ishigaki, Isao
Bokin Bobai-Shi, 17(7), p.311 - 317, 1989/00
no abstracts in English
; Ito, Hitoshi; Ishigaki, Isao
Shokuhin Shosha, 24(1-2), p.16 - 20, 1989/00
no abstracts in English
-rayKume, Tamikazu; ; *; Ishigaki, Isao
Shokuhin Shosha, 23(2), p.84 - 87, 1988/00
no abstracts in English
; Ito, Hitoshi; Ishigaki, Isao
Shokuhin Shosha, 23(2), p.88 - 92, 1988/00
no abstracts in English
Watanabe, Yuhei; Ito, Hitoshi; Ishigaki, Isao
Shokuhin Shosha, 22(2), p.12 - 15, 1987/11
In order to estimate the sterility dose of medical supplies for EB, the dry spores of 
601 were used as a microbial indicator.
*; ; ; *;
Journal of Polymer Science; Polymer Chemistry Edition, 22, p.3417 - 3421, 1984/00
no abstracts in English
; *; ; *;
Journal of Polymer Science; Polymer Letters Edition, 19, p.599 - 602, 1981/00
no abstracts in English
