Development of radiation resistant monitoring camera system

Takeuchi, Tomoaki; Otsuka, Noriaki; Watanabe, Takashi*; Tanaka, Shigeo*; Ozawa, Osamu*; Komanome, Hirohisa*; Ueno, Shunji*; Tsuchiya, Kunihiko

Proceedings of 2017 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC 2017) (Internet), 3 Pages, 2018/11

https://doi.org/10.1109/NSSMIC.2017.8532790

no abstracts in English

A New radiation hardened CMOS image sensor for nuclear plant

Watanabe, Takashi*; Takeuchi, Tomoaki; Ozawa, Osamu*; Komanome, Hirohisa*; Akahori, Tomoyuki*; Tsuchiya, Kunihiko

Proceedings of 2017 International Image Sensor Workshop (IISW 2017) (Internet), p.206 - 209, 2017/05

no abstracts in English

Development of radiation resistant camera system

Takeuchi, Tomoaki; Otsuka, Noriaki; Watanabe, Takashi*; Kamiyanagi, Tomohiro*; Komanome, Hirohisa*; Ueno, Shunji*; Tsuchiya, Kunihiko

Proceedings of Decommissioning and Remote Systems 2016 (D&RS 2016) (CD-ROM), p.263 - 264, 2016/07

In response to the lesson of the accident at the Fukushima Dai-ichi Nuclear Power Plant, we started a development of a radiation resistant monitoring camera system. In this study, improvement of radiation resistance of the imaging sensor was addressed as the main target. Three different types of CMOS image sensors with field plate structure and three transistors (3TPD), photogate structure and three (3TPG) or four transistors (4TPG) were designed and fabricated. The sensors were irradiated up to 70 kGy at the Co -ray irradiation facility at Takasaki Advanced Radiation Research Institute in Japan Atomic Energy Agency. After irradiation, the dark current of the 4TPG rapidly increased and excessed that of the 3T types at least by 50 kGy. The large increase of the dark current of the 4TPG resulted in almost no sensitivity at least by 50 kGy. On the other hand, the sensitivities of the 3T types remained usable values and 3TPG had larger sensitivity than 3TPD after 50 kGy. As the results, the 3TPG sensor was revealed to be the most advantageous one in terms of dark current and sensitivity among the fabricated three sensors.

irradiation effects of image sensor for radiation-resistant camera

Takeuchi, Tomoaki; Otsuka, Noriaki; Kamiyanagi, Tomohiro*; Watanabe, Takashi*; Komanome, Hirohisa*; Ueno, Shunji*; Tsuchiya, Kunihiko

no journal, , 

no abstracts in English

Efforts toward practical application of radiation-resistant camera

Tanaka, Shigeo*; Ozawa, Osamu*; Watanabe, Takashi*; Takeuchi, Tomoaki; Otsuka, Noriaki; Ueno, Shunji*; Komanome, Hirohisa*; Tsuchiya, Kunihiko

no journal, , 

no abstracts in English

光検出素子及び固体撮像装置

武内 伴照; 土谷 邦彦

上柳 智裕*; 渡辺 恭志*

JP, 2016-535804  Patent licensing information  Patent publication (In Japanese)

電圧感度が高く、且つ耐放射線特性を有する光検出素子及びこの光検出素子を画素とした固体撮像装置を提供する。P型の基体領域(11)と、基体領域(11)の上面に設けられたゲート絶縁膜(23)と、基体領域(11)の上部に埋め込まれたN型の電荷生成埋込領域(13)と、電荷生成埋込領域(13)の内径の基体領域(11)の上部に埋め込まれたN型の電荷読出領域(15i,j)と、電荷読出領域(15i,j)の内径側に埋め込まれたN型のリセットドレイン領域(16i,j)と、電荷生成埋込領域の上方となるゲート絶縁膜(23)上に設けられた透明電極(21i,j)と、電荷読出領域(15i,j)とリセットドレイン領域(16i,j)との間のゲート絶縁膜(23)上に設けられたリセットゲート電極(22i,j)とを備える。

OPTICAL-DETECTION ELEMENT, SOLID-STATE IMAGING DEVICE, AND METHOD FOR DRIVING SOLID-STATE IMAGING DEVICE

武内 伴照; 土谷 邦彦

渡辺 恭志*; 田中 茂雄*

JP, 15/941023  Patent licensing information  Patent publication (In Japanese)

An optical-detection element includes a p-type supporting-layer, an n-type buried charge-generation region to implement a photodiode with the supporting-layer, a p-type shield region buried in the buried charge-generation region, a gate insulating-film contacted with the shield region, a transparent electrode on the gate insulating-film, a p-type well region buried in the supporting-layer, and an n+-type charge-readout region buried in the supporting-layer at an edge of the well region toward the buried charge-generation region.