Chemical characterization of a volatile dubnium compound, DbOCl

Chiera, N. M.*; Sato, Tetsuya; Eichler, R.*; Tomitsuka, Tomohiro; Asai, Masato; Adachi, Sadia*; Dressler, R.*; Hirose, Kentaro; Inoue, Hiroki*; Ito, Yuta; et al.

Angewandte Chemie; International Edition, 60(33), p.17871 - 17874, 2021/08

https://doi.org/10.1002/anie.202102808

The formation and the chemical characterization of single atoms of dubnium (Db, element 105), in the form of its volatile oxychloride, was investigated using the on-line gas phase chromatography technique, in the temperature range 350 - 600 C. Under the exact same chemical conditions, comparative studies with the lighter homologs of group-5 in the Periodic Table clearly indicate the volatility sequence being NbOCl TaOCl DbOCl. From the obtained experimental results, thermochemical data for DbOCl were derived. The present study delivers reliable experimental information for theoretical calculations on the chemical properties of transactinides.

SiO/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

Watanabe, Kenta*; Terashima, Daiki*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Ishida, Masahiro*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA03_1 - 06KA03_6, 2018/06

https://doi.org/10.7567/JJAP.57.06KA03

The advantage of SiO/AlON stacked gate dielectrics over SiO, AlON and AlO single dielectric layers was demonstrated. Our systematic research revealed that the optimized stacked structure with 3.3-nm-thick AlON interlayer is beneficial in terms of superior interface quality, reduced gate leakage current and C-V hysteresis for next-generation high frequency and high power AlGaN/GaN MOS-HFETs.

Control of Ga-oxide interlayer growth and Ga diffusion in SiO/GaN stacks for high-quality GaN-based metal-oxide-semiconductor devices with improved gate dielectric reliability

Yamada, Takahiro*; Watanabe, Kenta*; Nozaki, Mikito*; Yamada, Hisashi*; Takahashi, Tokio*; Shimizu, Mitsuaki*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Express, 11(1), p.015701_1 - 015701_4, 2018/01

https://doi.org/10.7567/APEX.11.015701

A simple and feasible method for fabricating high-quality and highly reliable GaN-based metal-oxide-semiconductor (MOS) devices was developed on the basis of systematic physical and electrical characterizations. Chemical vapor deposition of SiO films directly onto GaN substrates forming Ga-oxide interlayers was used to fabricate SiO/GaO/GaN stacked structures. Although well-behaved hysteresis-free GaN-MOS capacitors with extremely low interface state density below 10cmeV were obtained by post-deposition annealing, Ga diffusion into overlying SiO layers severely degraded the insulating property and dielectric breakdown characteristics of the MOS devices. However, this problem was found to be solved by employing rapid thermal processing, leading to superior performance of the GaN-MOS devices in terms of interface quality, insulating property and gate dielectric reliability.

Japan - IAEA Joint Nuclear Energy Management School 2016

Yamaguchi, Mika; Hidaka, Akihide; Ikuta, Yuko; Murakami, Kenta*; Tomita, Akira*; Hirose, Hiroya*; Watanebe, Masanori*; Ueda, Kinichi*; Namaizawa, Ken*; Onose, Takatoshi*; et al.

JAEA-Review 2017-002, 60 Pages, 2017/03

JAEA-Review-2017-002.pdf:9.41MB

Since 2010, IAEA has held the NEM School to develop future leaders who plan and manage nuclear energy utilization in their county. Since 2012, JAEA together with Japan Nuclear HRD Network, University of Tokyo, Japan Atomic Industrial Forum and JAIF International Cooperation Center have cohosted the school in Japan in cooperation with IAEA. Since then, the school has been held in Japan every year. In 2006, Japanese nuclear technology and experience, such as lessons learned from the Fukushima Daiichi Nuclear Power Plant accident, were provided to offer a unique opportunity for the participants to learn about particular cases in Japan. Through the school, we contributed to the internationalization of Japanese young nuclear professionals, development of nuclear human resource of other countries including nuclear newcomers, and enhanced cooperative relationship with IAEA. Additionally, collaborative relationship within the network was strengthened by organizing the school in Japan.

Proton-exchange mechanism of specific Cs adsorption lattice defect sites of Prussian blue filled with coordination and crystallization water molecules

Ishizaki, Manabu*; Akiba, Sae*; Otani, Asako*; Hoshi, Yuji*; Ono, Kenta*; Matsuba, Mayu*; Togashi, Takanari*; Kanaizuka, Katsuhiko*; Sakamoto, Masatomi*; Takahashi, Akira*; et al.

Dalton Transactions, 42(45), p.16049 - 16055, 2013/12

https://doi.org/10.1039/c3dt51637g

We have revealed the fundamental mechanism of specific Cs adsorption into Prussian blue (PB) in order to develop high-performance PB-based Cs adsorbents in the wake of the Fukushima nuclear accident. We compared two types of PB nanoparticles with formulae of Fe[Fe(CN)]3xHO (x = 10-15) (PB-1) and (NH)0.70Fe1.10[Fe(CN)]1.7HO (PB-2) with respect to the Cs adsorption ability. The synthesised PB-1, by a common stoichiometric aqueous reaction between 4Fe and 3[Fe(CN)], showed much more efficient Cs adsorption ability than did the commercially available PB-2.

CFC indicating renewal of the Japan Sea deep water in winter 2000-2001

Tsunogai, Shizuo*; Kawada, Kentaro*; Watanabe, Shuichi*; Aramaki, Takafumi

Journal of Oceanography, 59(5), p.685 - 693, 2003/10

https://doi.org/10.1023/B:JOCE.0000009597.33460.d7

The water column distributions of CFC (chlorofluorocarbon) were determined twice in 2000 and 2001 in the northwestern Japan Sea. In 2000, the CFC-11 concentration decreased almost exponentially with depth from 6 pmol/kg at a few hundred m deep to 0.3 pmol/kg or less at the bottom of about 3400 m depth at 3 stations about 300 km off Vladivostok. In 2001, the CFC-11 concentration increased extremely up to 2 pmol/kg in the bottom water, while it did not increase at a station about 450 km away to the northeast. This is due to the renewal of the bottom water replaced by the surface water flowing down along the continental slope. The increase in the CFC-11 concentration was observed even in the whole water column above 3000 m depth. The increase in inventory is almost four times larger than that in the bottom water below 3000 m depth and equals about 1/6 of the total inventory found in 2000. The increase also means that 3 % of the deep water was replaced by the recent surface water or the turnover time of the deep water to be about 30 years, if the turnover occurs every year.

Improved interface properties of SiO/GaN MOS capacitor by interfacial GaOx formation with post-oxidation treatment

Yamada, Takahiro*; Watanabe, Kenta*; Nozaki, Mikito*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

no journal, , 

Interface properties of SiO/GaN structure with post-oxidation treatment were investigated by synchrotron radiation photoelectron spectroscopy and C-V measurements. High-resolution Ga 2p core-level spectra for SiO/GaN structure oxidized at 800 degrees showed asymmetric feature with a shoulder at higher binding energies compared to that for wet-cleaned GaN surface. From peak deconvolution of the Ga2p spectrum, formation of GaOx layer at the SiO/GaN interface was revealed. C-V measurements of the SiO/GaOx/GaN MOS capacitor exhibited apparently low frequency dispersion and a small hysteresis of below 50 mV. Moreover, the C-V curves well agreed with an ideal C-V curve. These results indicate that good interface properties were achieved by the interfacial GaOx formation.

Interface engineering of Al based gate insulators in AlGaN/GaN MOS-HFETs

Watanabe, Kenta*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

no journal, , 

AlGaN/GaN HFET (hetero-junction field-effect transitor) has gained much attention as next-generation high frequency and high power devices. Since AlGaN/GaN HFET with Schottky gate is restricted in device application due to large gate leakage current and normally-on operation, MOS gate stack with deposited gate insulator has been widely investigated to overcome these limitations. Among various insulating materials, AlO is one of the potential candidates because of its wide bandgap and high thermal stability. In this study, we systematically investigated the interface reaction between Al-based dielectrics (AlO and AlON) and AlGaN layer during deposition and post-deposition annealing (PDA), and revealed high thermal stability of AlON/AlGaN interface.

Design and control of interface reaction between Al-based dielectrics and AlGaN layer for hysteresis-free AlGaN/GaN MOS-HFETs

Watanabe, Kenta*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

no journal, , 

AlGaN/GaN HFET has gained much attention as next-generation high frequency and high power devices. Among various insulating materials, AlO is one of the potential candidates. However, large amount of electrical defects at MOS interfaces severely degrade both drive current and threshold voltage stability. Positive Vth shift due to electron trapping in AlO layer by applying positive gate bias is often observed for AlO/AlGaN/GaN MOS structures. We have recently reported that N incorporation into AlO significantly reduces electron traps in AlO layer for Si and SiC MOS devices. In this study, we systematically investigated the interface reaction between Al-based dielectrics (AlO and AlON) and AlGaN layer during deposition and post-deposition annealing (PDA), and revealed high thermal stability of AlON/AlGaN interface.

SiO/AlON stacked gate dielectrics for AlGaN/GaN MOS-HFET

Watanabe, Kenta*; Terashima, Daiki*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Ishida, Masahiro*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; et al.

no journal, , 

The advantage of SiO/AlON stacked gate dielectrics over SiO, AlON and AlO single dielectric layers was demonstrated. Our systematic research revealed that the optimized stacked structure with 3.3-nm-thick AlON interlayer is beneficial in terms of superior interface quality, reduced gate leakage current and C-V hysteresis for next-generation high frequency and high power AlGaN/GaN MOS-HFETs.