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Onoda, Shinobu; Abe, Hiroshi; Yamamoto, Takashi; Oshima, Takeshi; Isoya, Junichi*; Teraji, Tokuyuki*; Watanabe, Kenji*
Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.93 - 96, 2012/12
Onoda, Shinobu; Yamamoto, Takashi; Oshima, Takeshi; Isoya, Junichi*; Teraji, Tokuyuki*; Watanabe, Kenji*
Transactions of the Materials Research Society of Japan, 37(2), p.241 - 244, 2012/06
Yamamoto, Takashi; Onoda, Shinobu; Oshima, Takeshi; Naydenov, B.*; Dolde, F.*; Fedder, H.*; Honert, J.*; Jelezko, F.*; Wrachtrup, J.*; Teraji, Tokuyuki*; et al.
no journal, ,
no abstracts in English
Teraji, Tokuyuki*; Taniguchi, Takashi*; Watanabe, Kenji*; Koizumi, Satoshi*; Onoda, Shinobu; Oshima, Takeshi; Isoya, Junichi*
no journal, ,
Onoda, Shinobu; Yamamoto, Takashi; Abe, Hiroshi; Hanaya, Hiroaki; Oshima, Takeshi; Taniguchi, Takashi*; Teraji, Tokuyuki*; Watanabe, Kenji*; Koizumi, Satoshi*; Kanda, Hisao*; et al.
no journal, ,
no abstracts in English
Onoda, Shinobu; Abe, Hiroshi; Yamamoto, Takashi; Oshima, Takeshi; Isoya, Junichi*; Teraji, Tokuyuki*; Watanabe, Kenji*
no journal, ,
no abstracts in English
Onoda, Shinobu; Abe, Hiroshi; Yamamoto, Takashi; Oshima, Takeshi; Isoya, Junichi*; Teraji, Tokuyuki*; Watanabe, Kenji*
no journal, ,
Oshima, Takeshi; Yamamoto, Takashi; Onoda, Shinobu; Abe, Hiroshi; Sato, Shinichiro; Jahnke, K.*; Heller, P.*; Gerstmayr, A.*; H
ussler, A.*; Naydenov, B.*; et al.
no journal, ,
Negatively charged nitrogen-vacancy (NV
) centers were created in high quality IIa diamonds by nitrogen (N) implantation. To identify implanted N atoms and their incident position, micro ion beams of 
N (natural abundance 0.37%) were applied. Since the reduction of 
C affects an increase in T
, N implantation into a CVD diamond with high purity of 
C (99.99%) was carried out. As a result, the value of T for both NV and 
NV centers (NV centers are created from N atoms originally existing in the diamond and vacancy introduced by implantation after annealing) was obtained to be about 2 ms. By optically detected magnetic resonance (ODMR) measurements, the creation yield of both NV and NV was estimated.
Yamamoto, Takashi; Onoda, Shinobu; Oshima, Takeshi; Isoya, Junichi*; Teraji, Tokuyuki*; Taniguchi, Takashi*; Watanabe, Kenji*; Koizumi, Satoshi*; Umeda, Takahide*; Jelezko, F.*; et al.
no journal, ,
We have measured optically-detected magnetic resonance (ODMR) of single spin of NV center in a high purity C enriched CVD diamond created by N ion implantation. Detailed ODMR measurements of individual NV centers revealed that both NV and NV were created by the N implantation with a ratio of [NV]/[NV] 
1 and a high conversion yield of 70-100% for [NV+NV]. The spin coherence time of 
was measured to be 2 ms at room temperature, which is the longest ever recorded in implanted samples. This result is expected to have a significant impact on realizing NV based applications.
Yamamoto, Takashi; Onoda, Shinobu; Oshima, Takeshi; Teraji, Tokuyuki*; Watanabe, Kenji*; Taniguchi, Takashi*; Koizumi, Satoshi*; Umeda, Takahide*; Isoya, Junichi*; McGuinness, L.*; et al.
no journal, ,
no abstracts in English
C-enriched homoepitaxial diamond films growthTeraji, Tokuyuki*; Yamamoto, Takashi*; Koizumi, Satoshi*; Watanabe, Kenji*; Taniguchi, Takashi*; Onoda, Shinobu; Oshima, Takeshi; Naydenov, B.*; Jelezko, F.*; Isoya, Junichi*
no journal, ,
no abstracts in English
Isoya, Junichi*; Teraji, Tokuyuki*; Yamamoto, Takashi*; Taniguchi, Takashi*; Watanabe, Kenji*; Koizumi, Satoshi*; Onoda, Shinobu; Abe, Hiroshi; Oshima, Takeshi; Umeda, Takahide*; et al.
no journal, ,
no abstracts in English
