A Science-based mixed oxide property model for developing advanced oxide nuclear fuels

Kato, Masato; Oki, Takumi; Watanabe, Masashi; Hirooka, Shun; Vauchy, R.; Ozawa, Takayuki; Uwaba, Tomoyuki; Ikusawa, Yoshihisa; Nakamura, Hiroki; Machida, Masahiko

Journal of the American Ceramic Society, 107(5), p.2998 - 3011, 2024/05

https://doi.org/10.1111/jace.19609

Integration of multiple partial point clouds based on estimated parameters in photogrammetry with QR codes

Baba, Keita*; Watanobe, Yutaka*; Nakamura, Keita*; Matsumoto, Taku; Hanari, Toshihide; Kawabata, Kuniaki

Proceedings of 29th International Symposium on Artificial Life and Robotics (AROB 2024) (Internet), p.751 - 756, 2024/01

Improvement in the elution performance of an N,N,N',N-tetraoctyl diglycolamide impregnated extraction chromatography adsorbent using neodymium via micro-particle-induced X-ray emission analysis

Takahatake, Yoko; Watanabe, So; Arai, Tsuyoshi*; Sato, Takahiro*; Shibata, Atsuhiro

Applied Radiation and Isotopes, 196, p.110783_1 - 110783_5, 2023/06

https://doi.org/10.1016/j.apradiso.2023.110783

Formation of high-quality SiO/GaN interfaces with suppressed Ga-oxide interlayer via sputter deposition of SiO

Onishi, Kentaro*; Kobayashi, Takuma*; Mizobata, Hidetoshi*; Nozaki, Mikito*; Yoshigoe, Akitaka; Shimura, Takayoshi*; Watanabe, Heiji*

Japanese Journal of Applied Physics, 62(5), p.050903_1 - 050903_4, 2023/05

https://doi.org/10.35848/1347-4065/acd1ca

While the formation of an GaO interlayer is key to achieving SiO/GaN interfaces with low defect density, it can affect the reliability and stability of metal-oxide-semiconductor (MOS) devices if the annealing conditions are not properly designed. In the present study, we aimed to minimize the growth of the GaO layer on the basis of the sputter deposition of SiO on GaN. Synchrotron radiation X-ray photoelectron spectrometry measurements confirmed the suppressed growth of the GaO layer compared with a SiO/GaN structure formed by plasma-enhanced chemical vapor deposition. Negligible GaO growth was also observed when subsequent oxygen annealing up to 600C was performed. A MOS device with negligible capacitance-voltage hysteresis, nearly ideal flat-band voltage, and low leakage current was demonstrated by performing oxygen and forming gas annealing at temperatures of 600C and 400C, respectively.

Electrical properties and energy band alignment of SiO/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN(000) substrates

Mizobata, Hidetoshi*; Tomigahara, Kazuki*; Nozaki, Mikito*; Kobayashi, Takuma*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Letters, 121(6), p.062104_1 - 062104_6, 2022/08

https://doi.org/10.1063/5.0095468

The interface properties and energy band alignment of SiO/GaN metal-oxide-semiconductor (MOS) structures fabricated on N-polar GaN(000) substrates were investigated by electrical measurements and synchrotron-radiation X-ray photoelectron spectroscopy. They were then compared with those of SiO/GaN MOS structures on Ga-polar GaN(0001). Although the SiO/GaN(000) structure was found to be more thermally unstable than that on the GaN(0001) substrate, excellent electrical properties were obtained for the SiO/GaN(000) structure by optimizing conditions for post-deposition annealing. However, the conduction band offset for SiO/GaN(000) was smaller than that for SiO/GaN(0001), leading to increased gate leakage current. Therefore, caution is needed when using N-polar GaN(000) substrates for MOS device fabrication.

Comprehensive physical and electrical characterizations of NO nitrided SiO/4H-SiC(110) interfaces

Nakanuma, Takato*; Iwakata, Yu*; Watanabe, Arisa*; Hosoi, Takuji*; Kobayashi, Takuma*; Sometani, Mitsuru*; Okamoto, Mitsuo*; Yoshigoe, Akitaka; Shimura, Takayoshi*; Watanabe, Heiji*

Japanese Journal of Applied Physics, 61(SC), p.SC1065_1 - SC1065_8, 2022/05

https://doi.org/10.35848/1347-4065/ac4685

Nitridation of SiO/4H-SiC(110) interfaces with post-oxidation annealing in an NO ambient (NO-POA) and its impact on the electrical properties were investigated. Sub-nm-resolution nitrogen depth profiling at the interfaces was conducted by using a scanning X-ray photoelectron spectroscopy microprobe. The results showed that nitrogen atoms were incorporated just at the interface and that interface nitridation proceeded much faster than at SiO/SiC(0001) interfaces, resulting in a 2.3 times higher nitrogen concentration. Electrical characterizations of metal-oxide-semiconductor capacitors were conducted through capacitance-voltage () measurements in the dark and under illumination with ultraviolet light to evaluate the electrical defects near the conduction and valence band edges and those causing hysteresis and shifting of the curves. While all of these defects were passivated with the progress of the interface nitridation, excessive nitridation resulted in degradation of the MOS capacitors. The optimal conditions for NO-POA are discussed on the basis of these experimental findings.

Evaluation and mitigation of reactive ion etching-induced damage in AlGaN/GaN MOS structures fabricated by low-power inductively coupled plasma

Nozaki, Mikito*; Terashima, Daiki*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Japanese Journal of Applied Physics, 59(SM), p.SMMA07_1 - SMMA07_7, 2020/07

https://doi.org/10.35848/1347-4065/ab8f0e

AlGaN/GaN metal-oxide-semiconductor (MOS) structures were fabricated by low-power inductively coupled plasma reactive ion etching and chemical vapor deposition of SiO dielectrics on the etched surfaces, and they were systematically investigated by physical and electrical characterizations in an effort to develop a low-damage recessed gate process. The comprehensive research demonstrates the significant advantages of the proposed low-damage recessed gate process for fabricating next-generation AlGaN/GaN MOS-HFET devices.

Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

Yamada, Takahiro*; Watanabe, Kenta*; Nozaki, Mikito*; Shih, H.-A.*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA07_1 - 06KA07_6, 2018/06

https://doi.org/10.7567/JJAP.57.06KA07

Thermal oxidation of AlGaN surface and its impact on the electrical properties of AlGaN/GaN MOS capacitors were investigated by means of synchrotron radiation photoelectron spectroscopy (SR-PES), atomic force microscopy (AFM) and C-V measurements. SR-PES analysis revealed that the AlGaN surface is oxidized even at low temperature of 400C, in contrast to no oxide formation on GaN surface. However, since no noticeable change in the surface morphology was observed at temperatures up to 800C, it can be concluded that an ultrathin oxide overlayer is formed on the AlGaN surface. On the other hand, for the oxidation treatments above 850C, the formation of small oxide grains was observed over the entire area of the AlGaN surface, and the growth of oxide grains significantly degraded the surface morphology. Therefore, the AlGaN/GaN MOS capacitors were fabricated on the AlGaN surface oxidized at moderate temperatures up to 800C. While we have confirmed that relatively good interface properties are obtained for direct AlON deposition without oxidation treatment, it was found that the oxidation treatment at 400C leads to further improvement of interface properties and reduction of C-V hysteresis.

Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

Nozaki, Mikito*; Watanabe, Kenta*; Yamada, Takahiro*; Shih, H.-A.*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA02_1 - 06KA02_7, 2018/06

https://doi.org/10.7567/JJAP.57.06KA02

We fabricated AlON dielectric films by repeating thin AlN deposition and in situ O oxidation for AlGaN/GaN MOS-HFETs. Uniform nitrogen distribution is achievable by the proposed ALD-based process and that nitrogen concentration can be precisely controlled by changing AlN thickness (ALD cycle number) in each step. It was found that AlON films grown by ALD system offers significant advantages in terms of practical application while keeping superior Vth stability and electrical properties at the insulator/AlGaN interface in AlGaN/GaN MOS-HFETs.

Micro-PIXE analysis on adsorbent of extraction chromatography for MA(III) recovery

Takahatake, Yoko; Watanabe, So; Kofuji, Hirohide; Takeuchi, Masayuki; Nomura, Kazunori; Sato, Takahiro*

International Journal of PIXE, 26(3&4), p.73 - 83, 2017/09

BB2016-1248.pdf:0.36MB

https://doi.org/10.1142/S0129083517500012

JAEA has been conducting research and development of MA(III) recovery from HLLW by extraction chromatography technology for reduction in amount and environmental impact of radioactive waste. The behavior of adsorbed cations inside the adsorbent packed in a column is necessary to be evaluated for improvement of the adsorbent or flow-sheet to achieve targeted MA(III) recovery performance. In this paper, micro-PIXE analysis was carried out on the particles sampled from various positions of the column to reveal the behavior of cations inside the packed column with CMPO/SiO -P adsorbent. Simple experiment and data analysis were shown to be effective to reveal inside of the column, and formation and transportation of the adsorption bands were observed for some cations which are extractable by the CMPO extractant. Some part of Zr(IV) and Mo(VI) were found to remain inside the column without distinct transportation even after the elution operation.