Photoluminescence properties of light-emitting SiO substrates implanted with Si and C ions

Inada, Kazuki*; Kawashima, Akihiro*; Kano, Keisuke*; Noguchi, Katsuya*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Kawaguchi, Kazuhiro*; Yoshikawa, Masahito

no journal, , 

It is reported that Si and C ions implanted SiO substrates emit blue light. In this paper, we are studying photoluminescence (PL) properties of SiO substrates implanted with Si and C ions on various conditions. Si and C ions were implanted into an SiO substrate by using a 400-kV ion implanter at JAEA/Takasaki. The Si-ion implantation energy was 150 keV, and the implantation dose was 5.010 ions/cm. The C-ion implantation energy was 75 keV, and the implantation dose was 3.010 ions/cm. The samples were subsequently annealed at 700C for 25 min in air, after 1000C for 25 min in air. The results of PL measurements show that the PL peak wavelength became shorter by increasing the ratio of C ions to Si ions. Consequently, it was confirmed that the emission wavelength can be controlled by hanging the ratio of C and Si.